Microchip Technology EEPROM 1,633

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT24CS02-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000006 Amp	4.925 mm		2.5
AT24CS02-XHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			100	.65 mm	85 Cel			256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	2048 bit	1.7 V			e4				.000006 Amp	4.4 mm		2.5
AT24CS04-STUM-T	Microchip Technology	EEPROM	INDUSTRIAL	5	VSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.7		1.8/5	8	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH	TSOP5/6,.11,37	1	EEPROMs	100	.95 mm	85 Cel	NO	OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010000R		DUAL	1	HARDWARE	R-PDSO-G5		5 V	1 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7MIN SUPPLY		e3				.000001 Amp	2.9 mm		2.7
AT24MAC602-SSHM-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V			e4				.000006 Amp	4.925 mm		2.5
AT25080A-10TU-2.7	Microchip Technology	EEPROM																																MATTE TIN							1													e3	30	260
AT25320B-XHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	4096 words	5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	20 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	32	e4				.00001 Amp	4.4 mm		5
AT28C256E-15JU-T	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5			8	CHIP CARRIER					1.27 mm	85 Cel			32KX8	32K	-40 Cel		MATTE TIN			QUAD			R-PQCC-J32	2	5.5 V	3.556 mm			11.43 mm				262144 bit	4.5 V			e3	40	245			13.97 mm	150 ns	5
AT93C46-10PU-2.7	Microchip Technology	EEPROM
24AA128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	131072 bit	1.7 V			e3				.000005 Amp	9.271 mm		2.5
93AA66CT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	2 mA	256 words	5	YES		16	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	8		200	.5 mm	85 Cel	NO	TOTEM POLE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD		YES	DUAL		SOFTWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		6 ms	MICROWIRE	4096 bit	1.8 V			e4	40	260		.000001 Amp	3 mm
93LC46A-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X8	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	1024 bit	2.5 V	1000000 ERASE/WRITE CYCLES MIN; DATA RETENTION > 200 YEARS		e3	30	260		.000001 Amp	4.9 mm
AT24C01D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	128 words	3		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V	ALSO OPERATES AT 1.7V TO 3.6V @0.4MHZ		e4	40	260		.0000008 Amp	3 mm		3
AT25128B-MAHL-E	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	10 mA	16384 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		3-STATE	16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm		5 ms	SPI	131072 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ		e4	40	260		.000005 Amp	3 mm		5
AT25128B-SSPDGV-T	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	7 mA	16384 words	5			8	SMALL OUTLINE	SOP8,.23			100	1.27 mm	125 Cel			16KX8	16K	-40 Cel					DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm		5 ms	SPI	131072 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		.000013 Amp	4.9 mm		5
AT24C1024BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words				8	SMALL OUTLINE	SOP8,.25			40	1.27 mm	85 Cel		OPEN-DRAIN	128KX8	128K	-40 Cel			1010DDMR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	1048576 bit	2.5 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	256					.000006 Amp	4.925 mm
24AA16H-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		Matte Tin (Sn) - annealed	1010MMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V			e3	40	260		.000001 Amp	4.4 mm		2.5
AT93C46-10SU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5			16	SMALL OUTLINE	SOP8,.25	8		100	1.27 mm	85 Cel		3-STATE	64X16	64	-40 Cel					DUAL		SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm		10 ms	MICROWIRE	1024 bit	4.5 V	ALSO OPERATES WITH 2.7VMIN @1MHZ						.00003 Amp	4.9 mm		5
24AA04/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	512X8	512	0 Cel		MATTE TIN	1010XXMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V			e3	30	260		.0001 Amp	4.9 mm		5
24FC01T-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	125 Cel			128X8	128	-40 Cel			1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.63 mm		5 ms	I2C	1024 bit	1.7 V							.000003 Amp	2.95 mm		2.5
24LC02BHT-I/LT	Microchip Technology	EEPROM	INDUSTRIAL	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	4.5		3/5	8	SMALL OUTLINE	TSSOP5/6,.08		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn) - annealed	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e3	40	260		.000001 Amp	2 mm		4.5
AT24C64CN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			8KX8	8K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	65536 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32					.000006 Amp	4.925 mm		5
24LC08B/SN	Microchip Technology	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	70 Cel		OPEN-DRAIN	1KX8	1K	0 Cel		MATTE TIN	1010XMMR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	2.5 V			e3	30	260			4.9 mm		5
24FC512T-I/OT	Microchip Technology	EEPROM		8	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	2.5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37			200	.95 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-G5		5.5 V	1.45 mm	1000000 Write/Erase Cycles	1 MHz	1.6 mm		5 ms	I2C	524288 bit	1.7 V							.000001 Amp	2.9 mm		2.5
25AA320-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm		2.5
93LC56CT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	85 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm
24AA024HT-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOLCC8,.11,20			200	.5 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	40	260		.000005 Amp	3 mm		2.5
24CW640-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	1 mA	8192 words	1.8			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel			1010DDDR		DUAL	1	SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		5 ms	I2C	65536 bit	1.6 V							.000001 Amp	4.4 mm		1.8
24LC02BT-E/MNY	Microchip Technology	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		3/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V			e4	40	260		.000005 Amp	3 mm		5
25AA128-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	5 mA	16384 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			16KX8	16K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	10 MHz	7.62 mm	Not Qualified	5 ms	SPI	131072 bit	1.8 V			e3				.000001 Amp	9.271 mm		2.5
25AA640T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3	30	260		.000005 Amp	4.9 mm		2.5
AT24C08D-MAHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	1 mA	1024 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20			100	.5 mm	85 Cel		OPEN-DRAIN	1KX8	1K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-N8	1	3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	8192 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz		e4	40	260		.0000008 Amp	3 mm		3
AT25040AN-10SU-2.7	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	512 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			512X8	512	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	4096 bit	4.5 V	2.7V TO 5.5V @ 10MHz						.0000035 Amp	4.9 mm		5
AT28HC64B-70SU-235	Microchip Technology	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES		8	SMALL OUTLINE	SOP28,.4			10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN			DUAL	1		R-PDSO-G28	3	5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm		10 ms		65536 bit	4.5 V		64	e3	30	260		.0001 Amp	17.9 mm	70 ns	5	YES
AT28C16-15PC	Microchip Technology	EEPROM		24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words	5			8	IN-LINE	DIP24,.6			10	2.54 mm	70 Cel			2KX8	2K	0 Cel	NO				DUAL			R-PDIP-T24		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm		1 ms		16384 bit	4.5 V							.0001 Amp	31.9 mm	150 ns	5	YES
AT24C01B-TSU-T	Microchip Technology	EEPROM	INDUSTRIAL	5	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		128 words	5			8	SMALL OUTLINE, THIN PROFILE					.95 mm	85 Cel			128X8	128	-40 Cel					DUAL			R-PDSO-G5		5.5 V	1.1 mm		1 MHz	1.6 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			2.9 mm
AT24C128BY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel			16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4		260		.000001 Amp	3 mm
AT24C16BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			2KX8	2K	-40 Cel			1010MMMR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	16384 bit	1.8 V							.000006 Amp	4.9 mm		5
AT25320N-10SI-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	32768 bit	2.7 V	DATA RETENTION > 100 YEARS		e0				.0000005 Amp	4.9 mm
AT24C512BW-SH25-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	3.6			8	SMALL OUTLINE	SOP8,.3			40	1.27 mm	85 Cel			64KX8	64K	-40 Cel			1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	2.16 mm	1000000 Write/Erase Cycles	1 MHz	5.24 mm		5 ms	I2C	524288 bit	2.5 V		128					.000006 Amp	5.29 mm		3.6
5962-3826707MZA	Microchip Technology	EEPROM	MILITARY	32	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS	100 mA	131072 words	5	YES	5	8	FLATPACK	FL32,.5		EEPROMs		1.27 mm	125 Cel			128KX8	128K	-55 Cel	NO				DUAL			R-XDFP-F32		5.5 V	3.048 mm	10000 Write/Erase Cycles		11.6586 mm	Not Qualified	10 ms		1048576 bit	4.5 V	AUTOMATIC WRITE	128	e0	NOT SPECIFIED	NOT SPECIFIED		.00085 Amp	20.85 mm	120 ns	5	YES
5962-8852505XX	Microchip Technology	EEPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5			8	IN-LINE					2.54 mm	125 Cel			32KX8	32K	-55 Cel					DUAL			R-GDIP-T28		5.5 V	5.72 mm			15.24 mm	Not Qualified			262144 bit	4.5 V								37.215 mm	250 ns	5
AT17F040-30VJI	Microchip Technology	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS	20 mA	4194304 words	3.3		3/3.3	1	CHIP CARRIER	LDCC20,.4SQ		Flash Memories		1.27 mm	85 Cel			4MX1	4M	-40 Cel		TIN LEAD			QUAD			S-PQCC-J20	2	3.63 V	4.572 mm		33 MHz	8.9662 mm	Not Qualified	.03 ms		4194304 bit	2.97 V			e0			NOR TYPE	.001 Amp	8.9662 mm
AT24C01BU3-UU-T	Microchip Technology	EEPROM	INDUSTRIAL	8	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		128 words	5			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel			128X8	128	-40 Cel					BOTTOM			R-PBGA-B8		5.5 V	.91 mm		1 MHz	1.5 mm		5 ms	I2C	1024 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED			2 mm
AT24C02AN-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e0				.000003 Amp	4.9 mm
AT24C02N-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.9 mm
AT24C04-10PU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDIP-T8	1	5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000004 Amp	9.271 mm
AT24C04-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000003 Amp	4.4 mm
AT24C04-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260		.000004 Amp	4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.