Microchip Technology EEPROM 1,633

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
AT24C04A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.4 mm
AT24C04A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000004 Amp	4.4 mm
AT24C04AN-10SI-2.7	Microchip Technology	EEPROM		8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	3			8	SMALL OUTLINE	SOP8,.25			100	1.27 mm	85 Cel			512X8	512	-40 Cel			1010DDXR		DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	4096 bit	2.7 V						.000018 Amp	4.9 mm		3
AT24C04AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	1.8 V			e3		260	.000003 Amp	4.9 mm
AT24C08A-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	3		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			1KX8	1K	-40 Cel		Matte Tin (Sn)	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	8192 bit	2.7 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260	.000004 Amp	4.4 mm
AT24C08AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			1KX8	1K	-40 Cel		Matte Tin (Sn)	1010DMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	5 ms	I2C	8192 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3	40	260	.000003 Amp	4.9 mm
AT24C128-10TU-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25			40	.65 mm	85 Cel			16KX8	16K	-40 Cel			10100DDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm		10 ms	I2C	131072 bit	4.5 V	ALSO OPERATES AT 0.4MHZ AT 2.7VMIN SUPPLY	64				.000006 Amp	4.4 mm		5
AT24C128BN-SH-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			16KX8	16K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	1.8 V			e4	40	260	.000001 Amp	4.9 mm
AT24C16A-10TU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR		DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	5 ms	I2C	16384 bit	1.8 V	DATA RETENTION 100 YEARS; 1 MILLION ENDURANCE WRITE CYCLES		e3		260	.000003 Amp	4.4 mm
AT24C16B-PU	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	2048 words	5			8	IN-LINE	DIP8,.3			100	2.54 mm	85 Cel			2KX8	2K	-40 Cel			1010MMMR		DUAL		HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	16384 bit	1.8 V						.000006 Amp	9.271 mm		5
AT24C256BN-SH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V			e4	40	260	.000001 Amp	4.9 mm
AT24C32CY6-YH-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	4096 words	5			8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.11,20			100	.5 mm	85 Cel			4KX8	4K	-40 Cel			1010DDDR		DUAL		HARDWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	1 MHz	2 mm		5 ms	I2C	32768 bit	1.8 V	IT ALSO OPERATES AT 0.4MHZ AT 1.8MIN SUPPLY	32				.000006 Amp	3 mm		5
AT25128AN-10SQ-2.7	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	6 mA	16384 words	5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	125 Cel			16KX8	16K	-40 Cel					DUAL		HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	.000012 Amp	4.9 mm
AT25256W-10SI-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	32768 words	5		3/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel			32KX8	32K	-40 Cel		TIN LEAD			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	2.03 mm	100000 Write/Erase Cycles	2.1 MHz	5.27 mm	Not Qualified	10 ms	SPI	262144 bit	2.7 V	HARDWARE & SOFTWARE DATA PROTECTION; DATA RETENTION > 200 YEARS; 100K ENDURANCE WRITE CYCLES		e0		240	.000002 Amp	5.31 mm
AT25640AN-10SU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	2.7		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3		260	.0000015 Amp	4.9 mm
AT25640AY1-10YU-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	8192 words	2.7		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.2,25		EEPROMs	100	.65 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN			DUAL		HARDWARE/SOFTWARE	R-XDSO-N8	1	5.5 V	.9 mm	1000000 Write/Erase Cycles	5 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3		260	.0000015 Amp	4.9 mm
AT28C64X-25PC	Microchip Technology	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel		3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD			DUAL			R-PDIP-T28	1	5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	1 ms		65536 bit	4.5 V	10K OR 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; SELF-TIMED BYTE WRITE CYCLE		e0			.0001 Amp	36.95 mm	250 ns	5	YES
AT93C46-10SI-1.8	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	2.7		2/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	100	1.27 mm	85 Cel		3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.25 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V	DATA RETENTION 100 YEARS		e0			.0000001 Amp	4.9 mm
AT93C46-10TI-2.7	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words	5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	8	EEPROMs	100	.65 mm	85 Cel			64X16	64	-40 Cel		TIN LEAD			DUAL		SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.7 V	DATA RETENTION 100 YEARS		e0			.00001 Amp	4.4 mm
24AA256-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3	30	260	.000005 Amp	4.9 mm		2.5
24AA256T-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	2.5		1.8/5	8	SMALL OUTLINE	SOP8,.3		EEPROMs	200	1.27 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	262144 bit	1.7 V			e3		260	.000005 Amp	5.26 mm		2.5
24LC01BT-E/LT	Microchip Technology	EEPROM	AUTOMOTIVE	5	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP5/6,.08		EEPROMs	200	.65 mm	125 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	1.25 mm	Not Qualified	5 ms	I2C	1024 bit	2.5 V			e3		260	.000005 Amp	2 mm		5
24LC64-E/MS	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	125 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	40	260	.000005 Amp	3 mm		4.5
25AA020AT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37		EEPROMs	200	.95 mm	85 Cel			256X8	256	-40 Cel		MATTE TIN			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	2048 bit	1.8 V			e3		260	.000001 Amp	2.9 mm		2.5
25AA080B-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	1024 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			1KX8	1K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	8192 bit	1.8 V			e3	30	260	.000005 Amp	4.9 mm		2.5
25AA640A-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			8KX8	8K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	65536 bit	1.8 V			e3	40	260	.000001 Amp	3 mm		2.5
25LC320-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		3/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	85 Cel			4KX8	4K	-40 Cel		MATTE TIN			DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm		5
25LC320A-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	5 mA	4096 words	5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel		3-STATE	4KX8	4K	-40 Cel		Matte Tin (Sn)			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	4.5 V	OPERATES WITH 2.5V MIN @ 5 MHZ		e3	40	260	.000005 Amp	4.4 mm		5
93LC56B-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words	5	YES	3/5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	200	1.27 mm	125 Cel	NO	TOTEM POLE	128X16	128	-40 Cel		MATTE TIN		YES	DUAL	1	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	6 ms	MICROWIRE	2048 bit	2.5 V			e3	30	260	.000005 Amp	4.9 mm
AT24C04D-XHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words	3		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	1	HARDWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	16	e4			.0000008 Amp	4.4 mm		3	YES
AT24CS32-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	4096 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	4KX8	4K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.885 mm	Not Qualified	5 ms	I2C	32768 bit	2.5 V			e4			.000006 Amp	4.925 mm		5
AT24CSW010-UUM0B-T	Microchip Technology	EEPROM	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	1 mA	128 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4,2X2,16			100	.4 mm	85 Cel			128X8	128	-40 Cel		TIN SILVER COPPER	1010DDDR		BOTTOM	1	HARDWARE/SOFTWARE	R-PBGA-B4		3.6 V	.33 mm	1000000 Write/Erase Cycles	1 MHz			5 ms	I2C	1024 bit	1.7 V	1.7V TO 3.6V @ 0.1MHz AND 1.7V TO 3.6V @ 0.4MHz	8	e1			.0000008 Amp			1.8
AT25010B-MAHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	10 mA	128 words	5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	100	.5 mm	85 Cel			128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	1	HARDWARE/SOFTWARE	R-PDSO-N8	1	5.5 V	.6 mm	1000000 Write/Erase Cycles	20 MHz	2 mm	Not Qualified	5 ms	SPI	1024 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz		e4	40	260	.0000035 Amp	3 mm		5
AT28C010-12DM/883	Microchip Technology	EEPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class C	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words	5			8	IN-LINE					2.54 mm	125 Cel			128KX8	128K	-55 Cel					DUAL			R-GDIP-T32		5.5 V	5.72 mm			15.24 mm		10 ms		1048576 bit	4.5 V							42.2 mm	120 ns	5
AT28C256-25FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class C	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4		EEPROMs		1.27 mm	125 Cel		3-STATE	32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL			R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	10 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	250 ns	5	YES
AT28C256F-15FM/883	Microchip Technology	EEPROM	MILITARY	28	DFP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	FLAT	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	5	YES	5	8	FLATPACK	FL28,.4		EEPROMs	10	1.27 mm	125 Cel			32KX8	32K	-55 Cel	NO	TIN LEAD			DUAL	1		R-CDFP-F28	1	5.5 V	3.02 mm	10000 Write/Erase Cycles		10.16 mm	Not Qualified	3 ms		262144 bit	4.5 V	AUTOMATIC WRITE	64	e0			.0003 Amp	18.285 mm	150 ns	5	YES
24AA01-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	3 mm		2.5
24AA01-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	200	2.54 mm	85 Cel			128X8	128	-40 Cel		MATTE TIN	1010XXXR		DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3			.000001 Amp	9.271 mm		2.5
24AA01-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	4.4 mm		2.5
24AA01HT-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE	TSOP5/6,.11,37		EEPROMs	200	.95 mm	85 Cel		OPEN-DRAIN	128X8	128	-40 Cel		Matte Tin (Sn) - annealed	1010XXXR		DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.1 MHz	1.55 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V			e3	40	260	.000001 Amp	2.9 mm		2.5
24AA01T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	3 mm		2.5
24AA01T-I/MNY	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	200	.5 mm	85 Cel			128X8	128	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010XXXR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	.8 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e4	40	260	.000001 Amp	3 mm		2.5
24AA01T-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel			128X8	128	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	1024 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	3 mm		2.5
24AA02-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010XXXR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	3 mm		2.5
24AA025-I/MS	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.19		EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		Matte Tin (Sn)	1010DDDR		DUAL	1	HARDWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e3	40	260	.000001 Amp	3 mm		2.5
24AA025E64T-E/SN	Microchip Technology	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23		EEPROMs	200	1.27 mm	125 Cel		OPEN-DRAIN	256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	1		R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	2048 bit	2.5 V	1.7V TO 2.5V @ 0.1MHz		e3	30	260	.000005 Amp	4.9 mm		5
24AA044-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	TS 16949	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5			8	IN-LINE	DIP8,.3			200	1.27 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		MATTE TIN	1010DDMR		DUAL	1		R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm		5 ms	I2C	4096 bit	2.2 V	1.7V TO 1.8V @ 0.1MHz AND 1.8V TO 2.2V @ 0.4MHz		e3			.000001 Amp	9.271 mm		2.5
24AA04T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	512 words	2.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20		EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	512X8	512	-40 Cel		Matte Tin (Sn)	1010XXMR		DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	4096 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3	40	260	.000001 Amp	3 mm		2.5

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.