NXP Semiconductors EEPROM 179

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Programming Voltage (V)
PCF85103C-2T/00,11	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4	30	260	.0000035 Amp	4.9 mm
PCF8582C-2T/03	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	2.7	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8582C-2T/03,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8594C-2T/02,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL		HARDWARE	R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V		e4		260	.0000035 Amp	4.9 mm
PCF8582C-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDIP-T8		6 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4			.0000035 Amp	9.5 mm
PCF8582C-2P/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF8582C-2T/03,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4	30	260	.0000035 Amp	4.9 mm
PCF8582C2D-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			40	260		4.9 mm
PCA24S08D/DG,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	1024 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel		10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000015 Amp
PCF8582C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4			.0000035 Amp	4.9 mm
PCF8582C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL			R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			40	260		4.9 mm
27C010I15N	NXP Semiconductors
935182390112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	3.3		8	SMALL OUTLINE			40	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE	e4				7.55 mm
PCB2421T	NXP Semiconductors	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	70 Cel	OPEN-DRAIN	128X8	128	0 Cel		1010000R	DUAL		HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	10000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	20 ms	I2C	1024 bit	4.5 V					.00003 Amp	4.9 mm
PCA8581P	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words	5	5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		128X8	128	-25 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDIP-T8		5.5 V	4.2 mm	10000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V		e4			.00001 Amp	9.5 mm	5
PCB2421TD-T	NXP Semiconductors	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE				1.27 mm	70 Cel	OPEN-DRAIN	128X8	128	0 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	20 ms	I2C	1024 bit	4.5 V						4.9 mm
935262039118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm		10 ms	I2C	2048 bit	2.5 V						4.9 mm
PCA8581CT	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL			R-PDSO-G8	1	6 V	1.75 mm	10000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	10 YEAR OF DATA RETENTION	e4			.00001 Amp	4.9 mm	3
PCA24S08DP/DG,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	1024 words		3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	10	.635 mm	85 Cel		1KX8	1K	-40 Cel		10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	8192 bit						.000015 Amp
PCA8581TD-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8		5.5 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	4.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS	e4			.00001 Amp	4.9 mm
PCA24S08D,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified		I2C	8192 bit	2.5 V		e4			.000015 Amp	4.9 mm
27C010-20FA	NXP Semiconductors
935195550112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	3.3		8	SMALL OUTLINE			40	1.27 mm	85 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE	e4				4.9 mm
PCA24S08AD,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1048576 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1MX8	1M	-40 Cel	MATTE TIN	10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified		I2C	8388608 bit	2.5 V		e3	30	260	.000018 Amp	4.9 mm
27C010-12N	NXP Semiconductors
27C010-20A	NXP Semiconductors
935233300112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3		8	IN-LINE				2.54 mm	85 Cel		2KX8	2K	-40 Cel			DUAL			R-PDIP-T8		5.5 V	4.2 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		9.5 mm
935191710118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE			10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDSO-G8	1	6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4				4.9 mm
PCA8582F-2T	NXP Semiconductors	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel	OPEN-DRAIN	256X8	256	-40 Cel		1010DDDR	DUAL			R-PDSO-G8		5.5 V	1.75 mm	50000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE				.00001 Amp	4.9 mm
PCD8582D-2P	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5		8	IN-LINE			40	2.54 mm	70 Cel	OPEN-DRAIN	256X8	256	-25 Cel			DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					9.5 mm
PCA8582BT	NXP Semiconductors	EEPROM	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	125 Cel		256X8	256	-40 Cel			DUAL			R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	40 ms	I2C	2048 bit	4.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm
27C010I20A	NXP Semiconductors
PCA24S08AD	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words			8	SMALL OUTLINE				1.27 mm	85 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD SILVER		DUAL			R-PDSO-G8	1	3.6 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified		I2C	8388608 bit	2.5 V		e4				4.9 mm
PCD8598D-2T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE			40	1.27 mm	70 Cel	OPEN-DRAIN	1KX8	1K	-25 Cel			DUAL			R-PDSO-G8		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					7.55 mm
PCA24S08D,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified		I2C	8192 bit	2.5 V		e4			.000015 Amp	4.9 mm
PCA8581CTD-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	128 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		128X8	128	-25 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL			R-PDSO-G8		6 V	1.75 mm	10000 Write/Erase Cycles		3.9 mm	Not Qualified		I2C	1024 bit	2.5 V	8 BYTE PAGE WRITE; DATA RETENTION = 10 YEARS	e4			.00001 Amp	4.9 mm
PCA8581T-T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words	5		8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-25 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms		1024 bit	4.5 V	10 YEAR OF DATA RETENTION					4.9 mm	5
NXH5104UK/A1	NXP Semiconductors	EEPROM	OTHER	13	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SERIAL	SYNCHRONOUS		4194304 words	1.2		1	GRID ARRAY	BGA13,3X6,16		10	.4 mm	85 Cel		4MX1	4M	-20 Cel			BOTTOM	1		R-PBGA-B13		2 V	.42 mm	500000 Write/Erase Cycles		2.74 mm			SPI	4194304 bit	1 V						2.8 mm	1.2
PCA8581CP	NXP Semiconductors	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words			8	IN-LINE				2.54 mm	85 Cel		128X8	128	-25 Cel			DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms		1024 bit	2.5 V						9.5 mm	3
PCD8582D-2T	NXP Semiconductors	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE			40	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	-25 Cel			DUAL			R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	3 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					4.9 mm
935233310118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		2KX8	2K	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
PCA8598F-2P	NXP Semiconductors	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	5		8	IN-LINE			40	2.54 mm	125 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel			DUAL			R-PDIP-T8		5.5 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	4.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					9.5 mm
PCA8594F-2T	NXP Semiconductors	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE			40	1.27 mm	125 Cel	OPEN-DRAIN	512X8	512	-40 Cel			DUAL			R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					4.9 mm
PCF2042U	NXP Semiconductors	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP			10		85 Cel		256X8	256	-40 Cel			UPPER			X-XUUC-N		5.5 V			.052 MHz		Not Qualified	2.5 ms	I2C	2048 bit	4.5 V	100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN
PCF2042W	NXP Semiconductors	EEPROM	INDUSTRIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words	5		8	UNCASED CHIP			10		85 Cel		256X8	256	-40 Cel			UPPER			X-XUUC-N		5.5 V			.052 MHz		Not Qualified	2.5 ms	I2C	2048 bit	4.5 V	100K ERASE/WRITE CYCLES MIN; DATA RETENTION 10 YEARS MIN
935191670112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	3.3		8	IN-LINE			10	2.54 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE	e4				9.5 mm
PCA24S08ADP	NXP Semiconductors	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1048576 words			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel		1MX8	1M	-40 Cel	NICKEL PALLADIUM GOLD		DUAL			S-PDSO-G8	1	3.6 V	1.1 mm		.4 MHz	3 mm	Not Qualified		I2C	8388608 bit	2.5 V		e4				3 mm
PCA24S08D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	1024 words		3/3.3	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	10101MMR	DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	100000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified		I2C	8192 bit	2.5 V		e4			.000015 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.