NXP Semiconductors EEPROM 179

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	I2C Control Byte	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length
PCF85102C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF85116-3T-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3		8	SMALL OUTLINE				1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel			DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V						4.9 mm
PCF8581P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words	5		8	IN-LINE				2.54 mm	85 Cel		128X8	128	-40 Cel			DUAL		R-PDIP-T8		5.5 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	25 ms	I2C	1024 bit	4.5 V	I2C BUS INTERFACE; PAGE WRITE					9.5 mm
PCF8582ATD	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE			10	1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified		I2C	2048 bit	4.5 V	10K ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS					10.3 mm
PCF8598C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	3.3		8	SMALL OUTLINE			40	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel			DUAL		R-PDSO-G8		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE		40	260		7.55 mm
PCF85116-3P/01,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	20	2.54 mm	85 Cel		2KX8	2K	-40 Cel	NICKEL PALLADIUM GOLD	1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.2 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V		e4				9.5 mm
PCF85103C-2T/00	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	0010DDDR	DUAL		R-PDSO-G8	1	6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8582CP	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5		8	IN-LINE				2.54 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDIP-T8		6 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	25 ms	I2C	2048 bit	2.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					9.5 mm
PCF8598C-2T/02,518	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel		1010DMMR	DUAL	HARDWARE	R-PDSO-G8		6 V	2.65 mm	1000000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE				.00001 Amp	7.55 mm
PCF85102C2N	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF8598C-2T/02	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	2.7	3/5	8	SMALL OUTLINE	SOP8,.4	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	6 V	2.65 mm	1000000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V		e4		260	.0000035 Amp	7.55 mm
PCF8594E-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words	5		8	IN-LINE			40	2.54 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel			DUAL		R-PDIP-T8		5.5 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	4.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE					9.5 mm
PCF8598T	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		1KX8	1K	-40 Cel			DUAL		R-PDSO-G16		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	8192 bit	2.5 V	I2C BUS INTERFACE; PAGE WRITE; FMAX IS 100KHZ					10.3 mm
PCF8598C-2P	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		1024 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE	R-PDIP-T8		6 V	4.2 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE	e4			.0000035 Amp	9.5 mm
PCF85103C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL		R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			40	260	.0000035 Amp	4.9 mm
PCF8582CT	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		6 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	2048 bit	2.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm
PCF8594C2N	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	.8 mA	512 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		512X8	512	-40 Cel	NICKEL PALLADIUM GOLD		DUAL	HARDWARE	R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF85116-3D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	85 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V			40	260		4.9 mm
PCF8582APN	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words	5		8	IN-LINE			10	2.54 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDIP-T8		5.5 V	4.2 mm		.1 MHz	7.62 mm	Not Qualified		I2C	2048 bit	4.5 V	10K ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS					9.5 mm
PCF8598C-2T/02,512	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel		1010DMMR	DUAL	HARDWARE	R-PDSO-G8		6 V	2.65 mm	1000000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE				.00001 Amp	7.55 mm
PCF85103C-2P/00,11	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF85116-3N	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	20	2.54 mm	85 Cel		2KX8	2K	-40 Cel		1010MMMR	DUAL	HARDWARE	R-PDIP-T8		5.5 V	4.2 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V			40	250		9.5 mm
PCF85103C-2T/G,118	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm		10 ms	I2C	2048 bit	2.5 V						4.9 mm
PCF8582E-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	5	5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		1010DDDR	DUAL		R-PDSO-G8		5.5 V	1.75 mm	10000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	4.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE				.0000035 Amp	4.9 mm
PCF85103C2D-T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	256 words		3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		1010DDDR	DUAL		R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit						.0000035 Amp
PCF85102C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8594T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		512X8	512	-40 Cel			DUAL		R-PDSO-G8		6 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	25 ms	I2C	4096 bit	2.5 V	I2C BUS INTERFACE; PAGE WRITE; FMAX IS 100KHZ					4.9 mm
PCF85103C-2T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	0010DDDR	DUAL		R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	4.9 mm
PCF8598C-2T/02,112	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		1KX8	1K	-40 Cel	NICKEL PALLADIUM GOLD	1010DMMR	DUAL	HARDWARE	R-PDSO-G8	1	6 V	2.65 mm	1000000 Write/Erase Cycles	.1 MHz	7.5 mm	Not Qualified	10 ms	I2C	8192 bit	2.5 V	DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE	e4			.00001 Amp	7.55 mm
PCF85103C-2P/00	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	0010DDDR	DUAL		R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF8594C2D	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	512 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel		512X8	512	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE	R-PDSO-G8		6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	2.5 V		e4	40	260	.0000035 Amp	4.9 mm
PCF8582AT	NXP Semiconductors	EEPROM	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words	5		8	SMALL OUTLINE				1.27 mm	85 Cel		256X8	256	-40 Cel			DUAL		R-PDSO-G16		5.5 V	2.65 mm		.1 MHz	7.5 mm	Not Qualified	25 ms	I2C	2048 bit	4.5 V	I2C BUS INTERFACE; FMAX IS 100KHZ					10.3 mm
PCF85102C-2P/03,11	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	3.3	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	NICKEL PALLADIUM GOLD	1010DDDR	DUAL		R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF85102C-2P/03	NXP Semiconductors	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words	2.7	3/5	8	IN-LINE	DIP8,.3	EEPROMs	10	2.54 mm	85 Cel		256X8	256	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		R-PDIP-T8		6 V	4.2 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V		e4			.0000035 Amp	9.5 mm
PCF85116-3T	NXP Semiconductors	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	2048 words	3.3	3/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	20	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)	1010MMMR	DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.7 V		e4	40	260	.000006 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.