STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
ST24C16DM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M34C02-FMM6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28256-20NS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V							11.8 mm	200 ns	5
ST24C02RM5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.6		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-20 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL		R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4			.00001 Amp	4.9 mm
M28C17A-20KA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e3			.00005 Amp	13.995 mm	200 ns	5	YES
M28010-10RKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		2			8	CHIP CARRIER				10	1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD		R-PQCC-J32		2.4 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						13.995 mm	100 ns	3
M28C64-20WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	200 ns	3	YES
M28C4-A90WMS1T	STMicroelectronics
M28256-12NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0			.0001 Amp	11.8 mm	120 ns	5	YES
M28C4-A25WKA6	STMicroelectronics
M34C02-RDW6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.2		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4			.0000005 Amp	4.4 mm
ST1331-W2/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words		5			8	UNCASED CHIP								34X8	34						UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
M28256-20BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	36.02 mm	200 ns	5	YES
M34C02-RMM1T	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M93S66-DW3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.00005 Amp	4.4 mm
ST24C16M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e0			.0001 Amp	4.9 mm
M28C64-20WBS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		3			8	IN-LINE				40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel					DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION						36.02 mm	200 ns	3
ST93C56CM1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	70 Cel		128X16	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; USER CONFIGURABLE AS 128 X 16		e4			.00005 Amp	4.9 mm
ST93C47CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words				3.3/5	8	IN-LINE	DIP8,.3	16	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0			.00005 Amp	9.55 mm	500 ns
M28C4-A90WBS1	STMicroelectronics
M27C256B-12XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6		OTP ROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		120 ns	2.7
ST24W02M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	3 V			e4				4.9 mm
ST95N02M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	256 words				3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	2048 bit				e0			.00001 Amp
M93S46-WBN5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		1.5 mA	64 words				3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		64X16	64	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0			.00001 Amp
M28256-150KA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL		30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32				100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0			.0001 Amp		150 ns		YES
M28256-15NS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	1.25 mm			8 mm	Not Qualified			262144 bit	4.5 V							11.8 mm	150 ns	5
M14128-WD22	STMicroelectronics	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	131072 words		3.3		3/5	1	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	40		70 Cel		128KX1	128K	0 Cel			1010000R		UPPER	HARDWARE	R-XUUC-N	1	5.5 V		100000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	131072 bit	2.5 V						.000002 Amp
M34C02-RMM1G	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M2201B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	MMMMMMMR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	100000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	4.5 V	2 WIRE SERIAL INTERFACE; 100K ERASE/WRITE CYCLE; DATA RETENTION 100 YEARS; HARDWARE WRITE		e0			.0001 Amp	9.55 mm
ST93C46TB6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE					2.54 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16						9.55 mm
M28256-15WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3			.00002 Amp	13.995 mm	150 ns	3	YES
M27C1024-35XC7XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		35 ns	2.7
ST24W04M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4				4.9 mm
ST24C16M	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words					8	SMALL OUTLINE				10	1.27 mm	70 Cel		2KX8	2K	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified			16384 bit	3 V	OVER 10 YEARS DATA RETENTION						4.9 mm		3
ST95021WB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	256X8	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	SPI	2048 bit	2.5 V			e0			.000025 Amp	9.55 mm
M27C256B-15N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		TIN LEAD			DUAL		R-PDSO-G28							Not Qualified			262144 bit				e0			.0001 Amp		150 ns	2.7
ST24C16CML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP14,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	100000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.0001 Amp	8.65 mm
M93S56-DS3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e3			.00005 Amp	3 mm
ST24W04M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		512X8	512	0 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4				4.9 mm
M93S46-RBN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		65536 words		5			16	IN-LINE					2.54 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3				9.27 mm
M93S66-WDW5	STMicroelectronics	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	256 words				3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	85 Cel		256X16	256	-20 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit				e0			.00001 Amp
M28256-20KA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	200 ns	5	YES
M28010-10WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0			.00003 Amp	18.4 mm	100 ns	3	YES
M28010-15NA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	131072 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs	10	.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		5.5 V	1.2 mm			8 mm	Not Qualified			1048576 bit	4.5 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e0			.00005 Amp	18.4 mm	150 ns	5	YES
M27C256B-20XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G28										262144 bit				e0			.0001 Amp		200 ns	2.7
SRI2K-SBN18/GE	STMicroelectronics	EEPROM																																																								3
ST93C06B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	85 Cel	3-STATE	16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES.; 40 YEARS DATA RETENTION; USER CONFIGURABLE 16 X 16		e0			.00005 Amp	9.55 mm
ST25C01CB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE				10	2.54 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.