STMicroelectronics EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M93S56-MN3G/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.000015 Amp
M27C1024-12N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20	OTP ROMs		.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		100 ns	2.7
M28C64-15NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	11.8 mm	150 ns	5	YES
M28256-20KA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs		1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	200 ns	5	YES
ST25C16CML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE			10	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel					DUAL		R-PDSO-G14		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						8.65 mm
M93S46-WBN3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		64 words		5			16	IN-LINE				2.54 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3				9.27 mm
M27C256B-90XC3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		90 ns	2.7
ST24E16M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V							4.9 mm
M27C1024-35XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		35 ns	2.7
M28C64-25WKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6	EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	250 ns	3	YES
M93S56-DS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19	EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e3			.000015 Amp	3 mm
M28256-20WBS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			262144 bit	2.7 V							36.02 mm	200 ns	3
M28C17A-15NS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	2048 words		5	NO	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22	EEPROMs	40	.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e0			.00005 Amp	11.8 mm	150 ns	5	YES
M28C64X-200P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	37.085 mm	200 ns	5	YES
ST24E256M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		5 mA	32768 words		5		5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	10	1.27 mm	70 Cel		32KX8	32K	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	262144 bit				e0			.0001 Amp
M28256-20MS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE				1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified			262144 bit	4.5 V							17.9 mm	200 ns	5
M28LV64-200XMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	200 ns	3	YES
M34C02-FDW1G	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.2 mm	1000000 Write/Erase Cycles	.1 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e4			.0000005 Amp	4.4 mm
ST24W01CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE			10	1.27 mm	85 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M28LV16-300P1	STMicroelectronics	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP24,.6	EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T24		3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	31.75 mm	300 ns	3	YES
ST1333-W4/XXYY	STMicroelectronics	EEPROM		6	DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		34 words		5			8	UNCASED CHIP							34X8	34						UPPER		X-XUUC-N6							Not Qualified	5 ms	I2C	272 bit					NOT SPECIFIED	NOT SPECIFIED
ST93C46CB6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			8	IN-LINE			10	2.54 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm		1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
ST93C47M1013TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE				1.27 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified		MICROWIRE	1024 bit	3 V	CAN BE ORGANIZED AS 64 X 16						4.9 mm	500 ns
ST24E32DM3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5			8	SMALL OUTLINE			10	1.27 mm	125 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	10 ms	I2C	32768 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M27C256B-20XN3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22	OTP ROMs		.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G28										262144 bit				e0			.0001 Amp		200 ns	2.7
M93S46-WBN6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3			.00001 Amp	9.27 mm
M28LV17-200MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	17.9 mm	200 ns	3	YES
ST24FC21B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		4.5		3.6/5.5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	85 Cel		128X8	128	-40 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	3.6 V	40 YEAR DATA RETENTION		e0			.00003 Amp	9.55 mm
M34W02-RDW6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1 mA	256 words				2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0			.00003 Amp
ST24LC21B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	128 words				3/5	8	IN-LINE	DIP8,.3	EEPROMs	40	2.54 mm	70 Cel		128X8	128	0 Cel		TIN LEAD	1010XXXR		DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE I2C INTERFACE		e0			.000005 Amp	9.55 mm
M28C4-A12WNS1T	STMicroelectronics
M93S66-DW3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	125 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit				e4			.000015 Amp
M35B32-WMC3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		4096 words					8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE				.5 mm	125 Cel		4KX8	4K	-40 Cel					DUAL		R-PDSO-N8		5.5 V	.6 mm		10 MHz	2 mm		5 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28LV64-250XMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE	SOP28,.4	EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	250 ns	3	YES
M27C256B-10XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6	OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		100 ns	2.7
ST24C08RM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V			e0			.00001 Amp	4.9 mm
M34C02-RMN1G	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE				1.27 mm	70 Cel		256X8	256	0 Cel		TIN			DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e3				4.9 mm
M93S66-WMN1T	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		3.3		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X16	256	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V			e4			.00001 Amp	4.9 mm
ST24C04RM3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words					8	SMALL OUTLINE			40	1.27 mm	125 Cel		512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE						4.9 mm
M28C16-150K1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5			8	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel					QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	4.5 V							13.995 mm	150 ns	5
M93S46-WMN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		3/5	16	SMALL OUTLINE	SOP8,.25	EEPROMs	40	1.27 mm	125 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e4			.00001 Amp	4.9 mm
M28C64X-200P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	37.085 mm	200 ns	5	YES
M93S56-WDW3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.635 mm	125 Cel		128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.000005 Amp
M28256-90NS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22	EEPROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e0			.0001 Amp	11.8 mm	90 ns	5	YES
M28C64-15BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6	EEPROMs	40	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.0001 Amp	36.02 mm	150 ns	5	YES
M93S46-WDW6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	4.4 mm
M28010-10WBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	IN-LINE	DIP32,.6	EEPROMs		2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3			.00003 Amp	41.91 mm	100 ns	3	YES
M93S56-RMN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		5			16	SMALL OUTLINE				1.27 mm	125 Cel		128KX16	128K	-40 Cel		NICKEL PALLADIUM GOLD			DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V			e4				4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.