STMicroelectronics EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M34C02-WMM6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M28C64-12KA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.0001 Amp	13.995 mm	120 ns	5	YES
M28256-15MS3	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified			262144 bit	4.5 V							17.9 mm	150 ns	5
M27W512-70N6TR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			15 mA	65536 words	COMMON			3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel					DUAL		R-PDSO-G28	1						Not Qualified			524288 bit							.000015 Amp		70 ns	2.7
M28C16A-15KA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	15 mA	2048 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			16384 bit	4.5 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE	32	e3			.00002 Amp	13.995 mm	150 ns	5	YES
ST95020M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	3-STATE	256X8	256	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V			e4			.00005 Amp	4.9 mm
ST25164M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words					8	SMALL OUTLINE				40	1.27 mm	125 Cel		2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000000 ERASE/WRITE CYCLES; DATA RETENTION 40 YEARS						4.9 mm
M28LV16-300MS6	STMicroelectronics	EEPROM	INDUSTRIAL	24	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP24,.4		EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G24		3.6 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	15.4 mm	300 ns	3	YES
ST93C47TM1013TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE		16			1.27 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V							4.9 mm	500 ns
ST93CS66ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3.3/5	16	SMALL OUTLINE	SOP14,.25		EEPROMs	40	1.27 mm	125 Cel	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	8.65 mm
M28C4-A12WMS6T	STMicroelectronics
M93S46-RDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		2/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e3			.000002 Amp	3 mm
M93S66-MN3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e0			.00005 Amp	4.9 mm
M28256-25MS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	MATTE TIN			DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	17.9 mm	250 ns	5	YES
M28010-25WBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	IN-LINE	DIP32,.6		EEPROMs	10	2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			DUAL		R-PDIP-T32		3.6 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	2.7 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3			.00003 Amp	41.91 mm	250 ns	3	YES
M27C256B-20C1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6		OTP ROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		200 ns	2.7
M28LV16-300N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	11.8 mm	300 ns	3	YES
ST93C06B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	16 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	10	2.54 mm	70 Cel	3-STATE	16X16	16	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	1 MILLION ERASE/WRITE CYCLES.; 40 YEARS DATA RETENTION; USER CONFIGURABLE 16 X 16		e0			.00005 Amp	9.55 mm
M93S66-DW3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	125 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e0			.000015 Amp	4.4 mm
LRIS2KMBTG1ST	STMicroelectronics	EEPROM	OTHER	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	FLAT	SERIAL	SYNCHRONOUS		64 words					32	FLATPACK					.5 mm	85 Cel		64X32	64	-20 Cel					DUAL		R-XDFP-F8		3 V	.6 mm		13.567 MHz	2 mm	Not Qualified	5.8 ms		2048 bit	1.5 V							3 mm		3
M93S46-MN3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e4			.00005 Amp	4.9 mm
M28C16B-150WK6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel		2KX8	2K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V		64	e3			.00002 Amp	13.995 mm	150 ns	3	YES
M93S66-MN3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.00005 Amp	4.9 mm
ST25C01M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE				10	1.27 mm	125 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						4.9 mm
ST24164DM3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				10	1.27 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	16384 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M28LV64-200XMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	200 ns	3	YES
M93S46-WDS6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	3 mm
M34C02-FMM1	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3,3	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0			.0000005 Amp	3 mm
M93S66-WDW3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		256X16	256	-40 Cel		TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0				4.4 mm
ST24C08RB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel	OPEN-DRAIN	1KX8	1K	0 Cel		TIN LEAD	1010DMMR		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V			e0			.00001 Amp	9.55 mm
M34F04-WMN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3.3		2.7/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e4			.0000005 Amp	4.9 mm
M93S46-DW6	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e0			.000015 Amp	4.4 mm
M27C1024-12C1XTR	STMicroelectronics	EEPROM CARD		44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm		3-STATE	64KX16	64K	0 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		100 ns	2.7
M28C4-A12KA1	STMicroelectronics
M28256-20MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			DUAL		R-PDSO-G28		5.5 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	17.9 mm	200 ns	5	YES
ST25E32DM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.4 MHz	5.25 mm	Not Qualified	5 ms	I2C	32768 bit	2 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M9306B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	SERIAL		6 mA	16 words		5		5	16	IN-LINE	DIP8,.35		EEPROMs	10	2.54 mm	85 Cel		16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8				10000 Write/Erase Cycles			Not Qualified		MICROWIRE					e0			.003 Amp
ST24W01M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		5			8	SMALL OUTLINE				10	1.27 mm	125 Cel	OPEN-DRAIN	128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	1024 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						4.9 mm
M28C16-90K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	90 ns	5	YES
M28C64-30WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	11.8 mm	300 ns	3	YES
M93S56-DS6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e3			.000015 Amp	3 mm
M93S56-MN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		128X16	128	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e4			.00005 Amp
M28C64-12WMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	17.9 mm	120 ns	3	YES
M25P10-AVMN3G	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words				3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	125 Cel		128KX8	128K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V		10000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	1048576 bit	2.7 V			e3			.00005 Amp			2.7
ST95P02M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		3.3		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel		256X8	256	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 16 BYTE PAGE WRITE		e4			.00001 Amp	4.9 mm
ST95081B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	70 Cel		1KX8	1K	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	100000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V	100000 ERASE/WRITE CYCLES; 10 YEARS DATA RETENTION; SPI BUS INTERFACE; 16 BYTE PAGE WRITE		e0			.00005 Amp	9.55 mm
M28C64-25WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
ST25C02AB6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL		R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.000005 Amp	9.55 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.