STMicroelectronics EEPROM 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M28C64C-250P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	37.085 mm	250 ns	5	YES
M27C1024-90C6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		80 ns	2.7
ST24C04M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4				4.9 mm
M28256-120BS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28				100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0			.0001 Amp		120 ns		YES
M93S56-WDS6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e3			.000005 Amp	3 mm
M28LV64C-300MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		300 ns		YES
M93S46-WDS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3			.00001 Amp	3 mm
ST25W04B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-20 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0			.000005 Amp	9.55 mm
ST93C56B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	16	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	70 Cel	3-STATE	128X16	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	9.55 mm
M28C64-90WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e0			.00002 Amp	36.02 mm	90 ns	3	YES
M93S56-DS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0			.00005 Amp	3 mm
ST93CS66ML6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3.3/5	16	SMALL OUTLINE	SOP14,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	8.65 mm
M34C02-LBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0			.0000005 Amp	9.27 mm
ST95021M3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel	3-STATE	256X8	256	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		2 MHz	3.9 mm	Not Qualified	10 ms	SPI	2048 bit	4.5 V							4.9 mm
M27C1024-10N1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		100 ns	2.7
M34C02-RMN1P	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE					1.27 mm	70 Cel		256X8	256	0 Cel		TIN			DUAL		R-PDSO-G8	1	5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e3				4.9 mm
M93S46-BN1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		64X16	64	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V			e0			.00005 Amp	9.55 mm
M28C64-25WBS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs	40	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	36.02 mm	250 ns	3	YES
M28C4-A12WMS3T	STMicroelectronics
M93S56-WBN3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			16	IN-LINE					2.54 mm	125 Cel		128X16	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V							9.27 mm
ST24C04B6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-40 Cel		TIN LEAD	1010DDMR		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0				9.55 mm
M34S32-BN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		4096 words		5			8	IN-LINE				40	2.54 mm	85 Cel		4KX8	4K	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS						9.55 mm
M28256-20KA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	32768 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		262144 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	200 ns	5	YES
M35B32-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		4 mA	4096 words				3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		SPI	32768 bit							.000005 Amp
M35080-MN3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel		1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		2.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	4.5 V							4.9 mm
M93S46-WDW6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e0			.000005 Amp	4.4 mm
M35B32-WMN3G/K	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words				3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SOP8,.25		EEPROMs	40	.65 mm	85 Cel		4KX8	4K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	10 MHz	3 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.4 mm
M34D64-RMN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words		2.5		2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V			e4			.000001 Amp	4.9 mm
M93S46-DS3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel		Matte Tin (Sn)			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e3	30	260	.000015 Amp	3 mm
M28C16-25WNS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH				40	.55 mm	85 Cel		2KX8	2K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE						11.8 mm	250 ns	3
M28C64-12WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	120 ns	3	YES
ST93C06M3013TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	10	1.27 mm	125 Cel	3-STATE	16X16	16	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	256 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	4.9 mm
M93S66-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e4		260	.000005 Amp	4.9 mm
M34C02-WBN6TG	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				9.27 mm
ST93CS67B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel	3-STATE	256X16	256	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; PAGE WRITE		e0			.00005 Amp	9.55 mm
M34C02-WMN1T	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e0			.0000005 Amp	4.9 mm
M93S56-RBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	1.8 V			e0			.000001 Amp	9.27 mm
M28010-10WBA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3			8	IN-LINE					2.54 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDIP-T32		3.6 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	2.7 V							41.91 mm	100 ns	3
M28256-15KA3T	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	4.5 V							13.995 mm	150 ns	5
M28256-25WKA3T	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	CHIP CARRIER					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	2.7 V							13.995 mm	250 ns	3
M28C4-A20WMS6T	STMicroelectronics
M34C02-LMN1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0			.0000005 Amp	4.9 mm
M93S56-RDS3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		128KX16	128K	-40 Cel		MATTE TIN			DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V			e3				3 mm
M28C16-25WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		2048 words		3			8	CHIP CARRIER				40	1.27 mm	85 Cel		2KX8	2K	-40 Cel					QUAD		R-PQCC-J32		3.6 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified			16384 bit	2.7 V	ENDURANCE >100000 WRITE/ERASE CYCLES; DATA RETENTION > 40 YEARS; 32 BYTE PAGE WRITE						13.995 mm	250 ns	3
ST25DV16KC-JF6T3	STMicroelectronics	EEPROM																																																								12
M28256-25WMS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			262144 bit	2.7 V							17.9 mm	250 ns	3
M28256-90WNS1	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0			.00002 Amp	11.8 mm	90 ns	3	YES
M28010-20RKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		2.4 V	3.56 mm			11.455 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e3			.00003 Amp	13.995 mm	200 ns	3	YES

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.