STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M34E02-FDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		1.8		1.8/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V			e4	30	260	.000001 Amp	4.4 mm
M28LV16-300N6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V							11.8 mm	300 ns	3
M34F04-WMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	512 words		3.3		2.7/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-40 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	4096 bit	2.5 V			e4	30	260	.0000005 Amp	4.9 mm
M34D32-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1 mA	4096 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		4KX8	4K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	2.5 V			e0			.000002 Amp	9.55 mm
M34W02-DW1	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	256 words		5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.635 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	2048 bit				e0			.0001 Amp
M28C4-A25WMS6	STMicroelectronics
M14C04-WD20	STMicroelectronics	EEPROM	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	4096 words		3.3		3/5	1	UNCASED CHIP	MODULE,8LEAD,.4		EEPROMs	40		70 Cel		4KX1	4K	0 Cel			101000MR		UPPER	HARDWARE	R-XUUC-N	1	5.5 V		1000000 Write/Erase Cycles	.4 MHz		Not Qualified	10 ms	I2C	4096 bit	2.5 V						.000001 Amp
M27C1024-10XC6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		100 ns	2.7
ST95081M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel		1KX8	1K	0 Cel		Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0			.00005 Amp
M93S56-DW6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e0			.000015 Amp	4.4 mm
ST95010WM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X8	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	2.5 V			e4			.000025 Amp	4.9 mm
ST24C04RM6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words					8	SMALL OUTLINE				40	1.27 mm	85 Cel		512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	4096 bit	1.8 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE; PAGE WRITE						4.9 mm
M34C02-WMM6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	85 Cel		256X8	256	-40 Cel					DUAL		R-PDSO-N8		5.5 V	1 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
ST24E16M6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e0			.0001 Amp	4.9 mm
M28LV17-200MS1	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	17.9 mm	200 ns	3	YES
ST24W04CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M93S56-WBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e3			.000005 Amp	9.27 mm
ST25W16DM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2048 words		5			8	SMALL OUTLINE				10	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M28256-90WMS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel		32KX8	32K	-40 Cel	NO	MATTE TIN			DUAL		R-PDSO-G28		3.6 V	2.65 mm	100000 Write/Erase Cycles		7.5 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e3			.00002 Amp	17.9 mm	90 ns	3	YES
M93S56-RDW3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		131072 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		128KX16	128K	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	2097152 bit	1.8 V			e3				4.4 mm
M34C02-LDS6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		2.5		2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e0			.0000005 Amp	3 mm
M28C4-A20WKA1	STMicroelectronics
M34C02-WDW1T	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	70 Cel	OPEN-DRAIN	256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e0			.0000005 Amp	4.4 mm
M34C02-WDS1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		256 words		5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		256X8	256	0 Cel		MATTE TIN			DUAL		S-PDSO-G8	1	5.5 V	1.1 mm		.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				3 mm
M34C02-WDS6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN	1010DDDR		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3			.0000005 Amp	3 mm
ST1355DD15/XXYY	STMicroelectronics	EEPROM CARD		5		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		34 words		5			8	MICROELECTRONIC ASSEMBLY								34X8	34						UNSPECIFIED		X-XXMA-X5							Not Qualified			272 bit										5
M93S46-DS6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	85 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	4.5 V			e3			.000015 Amp	3 mm
ST93C46TB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	8	IN-LINE	DIP8,.3	8	EEPROMs	40	2.54 mm	125 Cel		128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles		7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16		e0			.00005 Amp	9.55 mm
M93S66-DW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.000015 Amp	4.4 mm
M34S32-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		4096 words		5			8	SMALL OUTLINE				40	1.27 mm	85 Cel		4KX8	4K	-20 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V	2 WIRE I2C INTERFACE; 1000K ERASE/WRITE CYCLES; DATA RETENTION= 40 YEARS						4.9 mm
M93S56-WMN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e0			.000005 Amp
M25P10-AVMN3TP	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	131072 words				3/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	20	1.27 mm	125 Cel		128KX8	128K	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V		10000 Write/Erase Cycles	50 MHz		Not Qualified		SPI	1048576 bit	2.7 V			e3			.00005 Amp			2.7
M28256-20KA3T	STMicroelectronics	EEPROM	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5			8	CHIP CARRIER					1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	4.5 V							13.995 mm	200 ns	5
ST25W04M5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	512 words		3.3		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		512X8	512	-20 Cel		NICKEL PALLADIUM GOLD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	SPI	4096 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e4			.000005 Amp	4.9 mm
M28C64-12WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	13.995 mm	120 ns	3	YES
M28010-10WNA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0			.00003 Amp	18.4 mm	100 ns	3	YES
M28C17-90P6	STMicroelectronics	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	MATTE TIN		YES	DUAL		R-PDIP-T28		5.5 V	5.08 mm			15.24 mm	Not Qualified	3 ms		16384 bit	4.5 V		64	e3			.0001 Amp	36.02 mm	90 ns	5	YES
M28C64C-200N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		5.5 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	11.8 mm	200 ns	5	YES
SRI512-W4/XXX	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	ASYNCHRONOUS		32 words		3			16	UNCASED CHIP						85 Cel		32X16	32	-20 Cel					UPPER		X-XUUC-N		3.5 V						5 ms		512 bit	2.5 V									3
M34D32MN5T	STMicroelectronics	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	4096 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		4KX8	4K	-20 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	32768 bit				e4			.00001 Amp			2.7
ST24C08RM3TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE					1.27 mm	125 Cel	OPEN-DRAIN	1KX8	1K	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V							4.9 mm
M28C17-120K6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	2048 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm			11.455 mm	Not Qualified	3 ms		16384 bit	4.5 V		64	e3			.0001 Amp	13.995 mm	120 ns	5	YES
ST93C47TM3013TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE		16			1.27 mm	125 Cel		128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified		MICROWIRE	1024 bit	3 V							4.9 mm
M27C1024-35XC1XTR	STMicroelectronics	EEPROM CARD	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND			35 mA	65536 words	COMMON	5		5	16	CHIP CARRIER	LDCC44,.7SQ		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		MATTE TIN			QUAD		S-PQCC-J44										1048576 bit				e3			.0001 Amp		35 ns	2.7
M93S56-BN3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	1.5 mA	128 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	4.5 V			e3			.00005 Amp	9.27 mm
M93S56-DS3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e0			.000015 Amp
M93S66-MN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	4.5 V			e4			.000015 Amp	4.9 mm
ST93C46B3013TR	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words		5			8	IN-LINE					2.54 mm	125 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	4.5 V	CAN BE ORGANIZED AS 64 X 16						9.55 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.