STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M93S66-WBN3P	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			16	IN-LINE					2.54 mm	125 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e3				9.27 mm
ST93C46TM3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	125 Cel	3-STATE	128X8	128	-40 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e0			.00005 Amp	4.9 mm
M2201VDW1	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		128 words		3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		128X8	128	0 Cel					DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C	1024 bit	2.7 V							4.4 mm
ST25E64DB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		8192 words		5			8	IN-LINE				10	2.54 mm	125 Cel	OPEN-DRAIN	8KX8	8K	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	65536 bit	2 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
ST24C16ML3	STMicroelectronics	EEPROM	AUTOMOTIVE	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP14,.25		EEPROMs	10	1.27 mm	125 Cel		2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		I2C	16384 bit				e0			.0001 Amp
M93S46-MN3TP/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e4			.00001 Amp
ST25C16M6TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel		TIN LEAD	1010MMMR		DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V			e0			.000005 Amp	4.9 mm
M28C64-15MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		5.5 V	2.65 mm			7.5 mm	Not Qualified	3 ms		65536 bit	4.5 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.0001 Amp	17.9 mm	150 ns	5	YES
M34E02-FMC6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	256 words		1.8		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.11,20		EEPROMs	40	.5 mm	85 Cel		256X8	256	-40 Cel			1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		5.5 V	.6 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	2048 bit	1.7 V						.000001 Amp	3 mm
ST93CS67ML6	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3/5	16	SMALL OUTLINE	SOP14,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	8.65 mm
XRA00-W4I/XXX	STMicroelectronics
M93S46-WDS3P/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	64 words				3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.635 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1			1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e3			.000005 Amp
M28LV17-300P1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDIP-T28		3.6 V	5.08 mm			15.24 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	36.02 mm	300 ns	3	YES
M93S56-WBN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	128 words		5		3/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel	3-STATE	128X16	128	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e0			.000005 Amp	9.27 mm
M28C64-90WMS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel	NO	MATTE TIN		YES	DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			65536 bit	2.7 V	40 YEARS DATA RETENTION; SOFTWARE DATA PROTECTION	64	e3			.00002 Amp	17.9 mm	90 ns	3	YES
M34C02-RDS1T	STMicroelectronics	EEPROM	COMMERCIAL	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		5.5 V	1.1 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e0			.0000005 Amp	3 mm
M28256-150MS1	STMicroelectronics	EEPROM	COMMERCIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	32768 words		5	YES	5	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0			.0001 Amp		150 ns		YES
M28010-10WNA1	STMicroelectronics	EEPROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	70 Cel		128KX8	128K	0 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0			.00003 Amp	18.4 mm	100 ns	3	YES
M28010-12RKA1T	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		131072 words		2			8	CHIP CARRIER				10	1.27 mm	70 Cel		128KX8	128K	0 Cel					QUAD		R-PQCC-J32		2.4 V	3.56 mm			11.455 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						13.995 mm	120 ns	3
M28LV17-200MS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE					1.27 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	2.65 mm			7.5 mm	Not Qualified			16384 bit	2.7 V							17.9 mm	200 ns	3
M93S66-RDS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		262144 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		256KX16	256K	-40 Cel					DUAL		S-PDSO-G8		5.5 V	1.1 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	4194304 bit	1.8 V							3 mm
M28LV16-250N1T	STMicroelectronics	EEPROM	COMMERCIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2048 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	70 Cel	3-STATE	2KX8	2K	0 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			16384 bit	2.7 V							11.8 mm	250 ns	3
M28C64C-150K6	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	30 mA	8192 words		5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	TIN LEAD		YES	QUAD		R-PQCC-J32		5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified	5 ms		65536 bit	4.5 V	32 BYTE PAGE WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION > 40 YEARS	32	e0			.0001 Amp	13.995 mm	150 ns	5	YES
M28256-20WNS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			262144 bit	2.7 V							11.8 mm	200 ns	3
ST93C56M6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25	8	EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X16	128	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	4.5 V	MICROWIRE BUS INTERFACE; AUTOMATIC WRITE; 1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	4.9 mm
ST93CS47ML1	STMicroelectronics	EEPROM	COMMERCIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		3 mA	64 words				3/5	16	SMALL OUTLINE	SOP14,.25		EEPROMs	40	1.27 mm	70 Cel		64X16	64	0 Cel		Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0			.00005 Amp
M34C02-WBN1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		Matte Tin (Sn)			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e3				9.27 mm
M34C02-LBN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		2.5			8	IN-LINE					2.54 mm	85 Cel		256X8	256	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3				9.27 mm
M28C4-A12KA6	STMicroelectronics
M28C4-A15WMS1	STMicroelectronics
ST24W04B5	STMicroelectronics	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	512 words		5		3.3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		512X8	512	-20 Cel		TIN LEAD	1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0				9.55 mm
M28256-90NS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		5			8	SMALL OUTLINE, THIN PROFILE					.55 mm	70 Cel	3-STATE	32KX8	32K	0 Cel					DUAL		R-PDSO-G28		5.5 V	1.2 mm			8 mm	Not Qualified	5 ms		262144 bit	4.5 V							11.8 mm	90 ns	5
M93S66-MN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	256 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		256X16	256	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	4096 bit				e4			.00005 Amp
M2201-WM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words				3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		128X8	128	-40 Cel		Tin/Lead (Sn/Pb)	MMMMMMMR		DUAL	HARDWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		I2C	1024 bit				e0			.0001 Amp
ST95080M3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	1024 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	125 Cel		1KX8	1K	-40 Cel		Tin/Lead (Sn/Pb)			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				100000 Write/Erase Cycles			Not Qualified		SPI	8192 bit				e0			.00005 Amp
SRI512-SB12I/1GE	STMicroelectronics	EEPROM	OTHER		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		16 words		3			32	UNCASED CHIP						85 Cel		16X32	16	-20 Cel					UPPER		X-XUUC-N		3.5 V								512 bit	2.5 V									3
M93S66-WDW6G	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e4			.000005 Amp	4.4 mm
ST95010M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	3-STATE	128X8	128	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	4.5 V			e4			.00005 Amp	4.9 mm
M28256-12WNS6T	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	15 mA	32768 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		32KX8	32K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G28		3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified	5 ms		262144 bit	2.7 V		64	e0			.00002 Amp	11.8 mm	120 ns	3	YES
ST95P08M1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3.3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel		1KX8	1K	0 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	8192 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION; SPI BUS SERIAL INTERFACE; 16 BYTE PAGE WRITE		e4			.00001 Amp	4.9 mm
M27C256B-20C3XTR	STMicroelectronics	EEPROM CARD	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND			30 mA	32768 words	COMMON	5		5	8	CHIP CARRIER	LDCC32,.5X.6		OTP ROMs		1.27 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		MATTE TIN			QUAD		R-PQCC-J32										262144 bit				e3			.0001 Amp		200 ns	2.7
M34C02-RMB1TP	STMicroelectronics	EEPROM	COMMERCIAL	8	VSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		256 words		2.2			8	SMALL OUTLINE, VERY THIN PROFILE					.5 mm	70 Cel		256X8	256	0 Cel					DUAL		R-XDSO-N8		5.5 V	.6 mm		.4 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V				NOT SPECIFIED	NOT SPECIFIED		3 mm
M93S66-RMN6T	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e0			.000001 Amp	4.9 mm
M28C64-25WKA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	40	1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		YES	QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e3			.00002 Amp	13.995 mm	250 ns	3	YES
M28C4-A15MS3T	STMicroelectronics
M28LV16-300K1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	10 mA	2048 words		3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	NO	TIN LEAD			QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified			16384 bit	2.7 V		64	e0			.00005 Amp	13.995 mm	300 ns	3	YES
ST93CS56B1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	128 words		3.3		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	70 Cel		128X16	128	0 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	4.8 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	2048 bit	3 V	1 MILLION ERASE/WRITE CYCLES; 40 YEARS DATA RETENTION		e0			.00005 Amp	9.55 mm
M93S56-WBN3TG	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		128 words		5			16	IN-LINE					2.54 mm	125 Cel		128X16	128	-40 Cel		MATTE TIN			DUAL		R-PDIP-T8		5.5 V	5.33 mm		2 MHz	7.62 mm	Not Qualified	5 ms	MICROWIRE	2048 bit	2.5 V			e3				9.27 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.