STMicroelectronics EEPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
M34C02-LBN1TG	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		256 words		2.5			8	IN-LINE					2.54 mm	70 Cel		256X8	256	0 Cel		Matte Tin (Sn)			DUAL		R-PDIP-T8		5.5 V	5.33 mm		.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	2048 bit	2.2 V			e3				9.27 mm
M34C02-RDW6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.2		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4			.0000005 Amp	4.4 mm
M28C64-20WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	11.8 mm	200 ns	3	YES
ST24E16M1TR	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	2048 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel	OPEN-DRAIN	2KX8	2K	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	16384 bit	4.5 V			e0			.0001 Amp	4.9 mm
M93S66-RBN6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	256 words		5		2/5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	85 Cel		256X16	256	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.33 mm	1000000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	1.8 V			e3			.000002 Amp	9.27 mm
ST93C47CM1	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	128 words				3.3/5	8	SMALL OUTLINE	SOP8,.25	16	EEPROMs	40	1.27 mm	70 Cel		128X8	128	0 Cel		TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles		3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	3 V			e0			.00005 Amp	4.9 mm	500 ns
M28256-120BS1	STMicroelectronics	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL		30 mA	32768 words		5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		32KX8	32K	0 Cel	NO	TIN LEAD			DUAL		R-PDIP-T28				100000 Write/Erase Cycles			Not Qualified	3 ms		262144 bit			64	e0			.0001 Amp		120 ns		YES
M28LV64C-200MS6	STMicroelectronics	EEPROM	INDUSTRIAL	28	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		15 mA	8192 words		3.3	YES	3.3	8	SMALL OUTLINE	SOP28,.4		EEPROMs		1.27 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28				100000 Write/Erase Cycles			Not Qualified	10 ms		65536 bit			32	e0			.00005 Amp		200 ns		YES
M28010-15WKA1	STMicroelectronics	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			QUAD		R-PQCC-J32		3.6 V	3.56 mm			11.455 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e3			.00003 Amp	13.995 mm	150 ns	3	YES
M93S46-BN3/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL		2 mA	64 words		5		5	16	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e0			.00001 Amp
M35B32-WDW3TG/K	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	4 mA	4096 words				3/5	8	SMALL OUTLINE	TSSOP8,.25		EEPROMs	40	1.27 mm	125 Cel		4KX8	4K	-40 Cel					DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	32768 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	.000005 Amp	4.9 mm
ST93C47M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING		SYNCHRONOUS		128 words					8	SMALL OUTLINE					1.27 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm			3.9 mm	Not Qualified		MICROWIRE	1024 bit	3 V	CAN BE ORGANIZED AS 64 X 16						4.9 mm	500 ns
M34C02-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	OPEN-DRAIN	256X8	256	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	2.5 V			e0			.0000005 Amp	4.9 mm
M28010-10RBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs	10	2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	Matte Tin (Sn)			DUAL		R-PDIP-T32		2.4 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	1.8 V	100K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS	128	e3			.00003 Amp	41.91 mm	100 ns	3	YES
ST24C04RM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	512 words				2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel		512X8	512	-40 Cel		Tin/Lead (Sn/Pb)	1010DDMR		DUAL	SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C	4096 bit				e0			.00001 Amp
M93S46-RDW3G	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		65536 words		5			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	125 Cel		64KX16	64K	-40 Cel		MATTE TIN			DUAL		R-PDSO-G8	1	5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	10 ms	MICROWIRE	1048576 bit	1.8 V			e3				4.4 mm
M93S66-WMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	256 words		5		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	MICROWIRE	4096 bit	2.5 V			e0			.000005 Amp	4.9 mm
M28C64-12WNS1T	STMicroelectronics	EEPROM	COMMERCIAL	28	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP28,.53,22		EEPROMs	40	.55 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.2 mm			8 mm	Not Qualified	5 ms		65536 bit	2.7 V	MINIMUM 100K ERASE/WRITE CYCLES; MINIMUM 40 YEARS DATA RETENTION	64	e0			.00002 Amp	11.8 mm	120 ns	3	YES
M93S46-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		2.5		2/3.3	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.5 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e4			.000005 Amp	4.9 mm
M28010-20RBA1	STMicroelectronics	EEPROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	70 Cel		128KX8	128K	0 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		2.4 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e3			.00003 Amp	41.91 mm	200 ns	3	YES
M28010-15WNA6T	STMicroelectronics	EEPROM	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	26 mA	131072 words		3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		EEPROMs		.5 mm	85 Cel		128KX8	128K	-40 Cel	NO	TIN LEAD			DUAL		R-PDSO-G32		3.6 V	1.2 mm			8 mm	Not Qualified	10 ms		1048576 bit	2.7 V		128	e0			.00003 Amp	18.4 mm	150 ns	3	YES
ST24C04CM6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		512 words		5			8	SMALL OUTLINE				10	1.27 mm	85 Cel	OPEN-DRAIN	512X8	512	-40 Cel					DUAL		R-PDSO-G8		5.5 V	2.03 mm		.1 MHz	5.25 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						5.3 mm
M34C02-FMB1T	STMicroelectronics	EEPROM	COMMERCIAL	8	HVSSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH	SOLCC8,.11,20		EEPROMs	40	.5 mm	70 Cel		256X8	256	0 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	.6 mm	1000000 Write/Erase Cycles	.1 MHz	2 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e0			.0000005 Amp	3 mm
M27C256B-90XN6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	32768 words	COMMON	5		5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		OTP ROMs		.55 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G28										262144 bit				e0			.0001 Amp		90 ns	2.7
ST24C08RM5TR	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		1024 words		5			8	SMALL OUTLINE					1.27 mm	85 Cel	OPEN-DRAIN	1KX8	1K	-20 Cel					DUAL		R-PDSO-G8		5.5 V	1.75 mm		.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	8192 bit	1.8 V							4.9 mm
ST25164DB3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		2048 words		5			8	IN-LINE				10	2.54 mm	125 Cel	OPEN-DRAIN	2KX8	2K	-40 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	16384 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
ST24C04CB1	STMicroelectronics	EEPROM	COMMERCIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		512 words		5			8	IN-LINE				10	2.54 mm	70 Cel	OPEN-DRAIN	512X8	512	0 Cel					DUAL		R-PDIP-T8		5.5 V	5.9 mm		.1 MHz	7.62 mm	Not Qualified	10 ms	I2C	4096 bit	3 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS						9.55 mm
M93S46-WMN5T	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		1.5 mA	64 words				3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		64X16	64	-20 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	1024 bit				e4			.00001 Amp
ST25C08B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	1024 words		3.3		3/5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel		1KX8	1K	-40 Cel		TIN LEAD	1010DMMR		DUAL	SOFTWARE	R-PDIP-T8		5.5 V	5.9 mm	1000000 Write/Erase Cycles	.1 MHz	7.62 mm	Not Qualified	10 ms	SPI	8192 bit	2.5 V	40 YEARS DATA RETENTION; 2 WIRE SERIAL INTERFACE		e0			.000005 Amp	9.55 mm
ST95011M6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	128 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	128X8	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	10 ms	SPI	1024 bit	4.5 V			e0			.00005 Amp	4.9 mm
M34C02-RDW6P	STMicroelectronics	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.2		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	40	.65 mm	85 Cel		256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C	2048 bit	1.8 V			e4			.0000005 Amp	4.4 mm
ST25DV04KC-JF6S3	STMicroelectronics	EEPROM																																																								12
ST93CS47M6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	64 words		3.3		3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	4.9 mm
ST93CS67ML6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	14	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words		3.3		3/5	16	SMALL OUTLINE	SOP14,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	256X16	256	-40 Cel		NICKEL PALLADIUM GOLD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G14		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	4096 bit	2.5 V	1000K ERASE/WRITE CYCLES MIN.; DATA RETENTION > 10 YEARS		e4			.00005 Amp	8.65 mm
M93S46-WDS3TP	STMicroelectronics	EEPROM	AUTOMOTIVE	8	TSSOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1.5 mA	64 words		5		3/5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.19		EEPROMs	40	.65 mm	125 Cel		64X16	64	-40 Cel		MATTE TIN			DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	1	5.5 V	1.1 mm	1000000 Write/Erase Cycles	2 MHz	3 mm	Not Qualified	5 ms	MICROWIRE	1024 bit	2.5 V			e3			.00001 Amp	3 mm
M34D64-RMN5	STMicroelectronics	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	.8 mA	8192 words		2.5		2/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel		8KX8	8K	-20 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		3.6 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	1.8 V			e4			.000001 Amp	4.9 mm
M93S46-RMN6	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	64 words		5		2/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE	1024 bit	1.8 V			e0			.000001 Amp	4.9 mm
M27C1024-90N6XTR	STMicroelectronics	EEPROM CARD	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			35 mA	65536 words	COMMON	5		5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.56,20		OTP ROMs		.5 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		TIN LEAD			DUAL		R-PDSO-G40										1048576 bit				e0			.0001 Amp		80 ns	2.7
M28C17-90N6	STMicroelectronics	EEPROM	INDUSTRIAL	28	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		30 mA	2048 words		5	YES	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs		.55 mm	85 Cel		2KX8	2K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28							Not Qualified			16384 bit			64	e0			.0001 Amp		90 ns		YES
M14C32-S43	STMicroelectronics	EEPROM	COMMERCIAL		DIE	UNSPECIFIED	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		32768 words		3.3			1	UNCASED CHIP						70 Cel		32KX1	32K	0 Cel					UPPER		X-XUUC-N		5.5 V			.4 MHz		Not Qualified	10 ms	I2C	32768 bit	2.5 V
ST93C47B6013TR	STMicroelectronics	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE		SYNCHRONOUS		128 words					8	IN-LINE					2.54 mm	85 Cel		128X8	128	-40 Cel					DUAL		R-PDIP-T8		5.5 V	4.8 mm			7.62 mm	Not Qualified		MICROWIRE	1024 bit	3 V	CAN BE ORGANIZED AS 64 X 16						9.55 mm	500 ns
ST24E32B3	STMicroelectronics	EEPROM	AUTOMOTIVE	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	MOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	2 mA	4096 words		5		5	8	IN-LINE	DIP8,.3		EEPROMs	40	2.54 mm	125 Cel	OPEN-DRAIN	4KX8	4K	-40 Cel		TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.9 mm	100000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C	32768 bit	4.5 V			e0			.0001 Amp	9.55 mm
M93S56-WMN3T/W	STMicroelectronics	EEPROM	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		2 mA	128 words		5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	125 Cel		128X16	128	-40 Cel		TIN LEAD			DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		MICROWIRE	2048 bit				e0			.000005 Amp
M28256-15WNS3T	STMicroelectronics	EEPROM	AUTOMOTIVE	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		32768 words		3.3			8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH					.55 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL		R-PDSO-G28		3.6 V	1.25 mm			8 mm	Not Qualified			262144 bit	2.7 V							11.8 mm	150 ns	3
M28010-20RBA6	STMicroelectronics	EEPROM	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	12 mA	131072 words		2	YES	1.8/2.4	8	IN-LINE	DIP32,.6		EEPROMs		2.54 mm	85 Cel		128KX8	128K	-40 Cel	NO	MATTE TIN			DUAL		R-PDIP-T32		2.4 V	5.08 mm			15.24 mm	Not Qualified	10 ms		1048576 bit	1.8 V		128	e3			.00003 Amp	41.91 mm	200 ns	3	YES
M28LV64-250XN6	STMicroelectronics	EEPROM	INDUSTRIAL	28	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	10 mA	8192 words			YES	3/3.3	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSSOP28,.53,22		EEPROMs	40	.55 mm	85 Cel		8KX8	8K	-40 Cel	NO	TIN LEAD		YES	DUAL		R-PDSO-G28		3.6 V	1.25 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			65536 bit	2.7 V	ENDURANCE >100000 ERASE/WRITE CYCLES; DATA RETENTION >40 YEARS; SOFTWARE DATA PROTECTION	64	e0			.00002 Amp	11.8 mm	250 ns	3	YES
M34C02-FMN1P	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	1 mA	256 words		2.5		1.8/3.3	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		256X8	256	0 Cel		NICKEL PALLADIUM GOLD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	1	3.6 V	1.75 mm	1000000 Write/Erase Cycles	.1 MHz	3.9 mm	Not Qualified	10 ms	I2C	2048 bit	1.7 V			e4			.0000005 Amp	4.9 mm
M34D64-MN1T	STMicroelectronics	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words		5		5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	40	1.27 mm	70 Cel		8KX8	8K	0 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	10 ms	I2C	65536 bit	4.5 V			e4			.00001 Amp	4.9 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.