Samsung EEPROM 1,108

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
KM28C256-15	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		60 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel		32KX8	32K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.59 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms			262144 bit	4.5 V		64	e0		.0001 Amp	37.2 mm		150 ns	5	YES
KM28C64BJI-15	Samsung	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD			QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms			65536 bit	4.5 V		64	e0		.0001 Amp	13.97 mm		150 ns	5	YES
S524C20D21-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel		256X8	256	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.95 mm		.1 MHz	3.95 mm	Not Qualified	10 ms	I2C		2048 bit	2.5 V			e0			4.92 mm
KFM1G16Q2A-DED60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				1073741824 bit			1K	e3	NAND TYPE	.00005 Amp			76 ns	2.7	NO
K8S1315EZC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit				e3	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524C20D20-RIB0	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	256 words			2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	85 Cel		256X8	256	-40 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		2048 bit						.000005 Amp
KS24C040CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2.2/5.5	1	SMALL OUTLINE	TSSOP8,.3		EEPROMs	100	.65 mm	70 Cel		4KX1	4K	-25 Cel			Tin/Lead (Sn/Pb)	1010DDXR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		4096 bit	2.2 V			e0		.000005 Amp	4.4 mm
S524C20D10-R1T	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	3.3			8	SMALL OUTLINE						85 Cel		128X8	128	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		1024 bit	2.5 V			e0
KS24C011ITTF	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	1024 words	2.5		3/5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		1KX1	1K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		1024 bit	2.2 V			e0		.000005 Amp	4.4 mm
KM93C67GD	Samsung	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	512 words	5		5	8	SMALL OUTLINE	SOP8,.25	16	EEPROMs	10	1.27 mm	70 Cel	3-STATE	512X8	512	0 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	100000 Write/Erase Cycles	1 MHz	3.94 mm	Not Qualified	10 ms	MICROWIRE		4096 bit	4.5 V			e0		.00005 Amp	5.02 mm
KFH8GH6Q4M-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	8589934592 bit			2K	e3	NAND TYPE	.0001 Amp			76 ns	2.7	NO
S524A60X81-RIT	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		1KX8	1K	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		8192 bit	1.8 V			e0			4.4 mm
KM2817A25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL				2048 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel		NO	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDIP-T28							Not Qualified	10 ms			16384 bit				e0					250 ns		NO
KM28C256A-20	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		60 mA	32768 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs	10	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms			262144 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	64	e0		.0001 Amp			200 ns	5	YES
KFH8GH6Q4M-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	40 mA	536870912 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX16	512M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	8589934592 bit			2K	e3	NAND TYPE	.0001 Amp			76 ns	2.7	NO
S524LB0X91-SCTB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	4096 words			2/5.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		4KX8	4K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		32768 bit						.000002 Amp
KM93C57VG	Samsung	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2 mA	256 words	3.3		3.3/5	8	SMALL OUTLINE	SOP8,.25	8	EEPROMs	10	1.27 mm	70 Cel	3-STATE	256X8	256	0 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	100000 Write/Erase Cycles	1 MHz	3.94 mm	Not Qualified	10 ms	MICROWIRE		2048 bit	3 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS		e0		.00005 Amp	5.02 mm
KM28C64IJ20	Samsung
S524L50D51-DCB0	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	2048 words			2/5.5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		2KX8	2K	-25 Cel				1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit						.000002 Amp
KS24L321I	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	32768 words	5		2/5.5	1	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		32KX1	32K	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		32768 bit	2 V			e0		.000002 Amp	9.2 mm
S524C80D41-SIT0	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	512 words			2.5/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel				1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		4096 bit						.000005 Amp
KS24A161CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16384 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel		16KX1	16K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V						4.92 mm
S524LB0XB1-SI	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8192 words	5			8	SMALL OUTLINE						85 Cel		8KX8	8K	-40 Cel						DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	5 ms	I2C		65536 bit	2 V	UPON REQUEST CLOCK FREQUENCY AVAILABLE UPTO 400KHZ
KM28C64PI20	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel		NO				DUAL		R-PDIP-T28				10000 Write/Erase Cycles			Not Qualified	5 ms			65536 bit			32			.0001 Amp			200 ns		YES
S524C20D20-DIB0	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	256 words			2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		256X8	256	-40 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		2048 bit						.000005 Amp
S524A40X11-DCB	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	128 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		128X8	128	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit						.000001 Amp
S524C20D11-RC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			128 words	3.3			8	SMALL OUTLINE						70 Cel		128X8	128	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		1024 bit	2.5 V			e0
K9K2G08R0A-JCB0T	Samsung	EEPROM CARD	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX8	256M	0 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				2147483648 bit			2K	e3	NAND TYPE	.0001 Amp			45 ns	2.7	NO
S524C80D41-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE						70 Cel		512X8	512	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		4096 bit	2.5 V			e0
K9K2G08R0A-JIB0	Samsung	EEPROM CARD	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		128K	30 mA	268435456 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				2147483648 bit			2K	e3	NAND TYPE	.0001 Amp			45 ns	2.7	NO
S524C80D81-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE						70 Cel		1KX8	1K	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		8192 bit	2.5 V			e0
S524AE0XH1-DCU	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	65536 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	50	2.54 mm	70 Cel		64KX8	64K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDIP-T8				500000 Write/Erase Cycles			Not Qualified		I2C		524288 bit						.000001 Amp
S524A40X20-RIT	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		256X8	256	-40 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V						4.4 mm
KFN2G16Q2A-DED6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	134217728 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-30 Cel	2K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified				2147483648 bit			1K	e3	NAND TYPE	.00005 Amp			76 ns	2.7	NO
KS24L161CTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	2048 words			2/5.5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8(UNSPEC)		EEPROMs	100		70 Cel		2KX8	2K	-25 Cel			Tin/Lead (Sn/Pb)	1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit				e0		.000002 Amp
K8S1215EBC-SE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit				e3	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524AB0X91-RI	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.65 mm	85 Cel		4KX8	4K	-40 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V					.000001 Amp	4.4 mm
K8S1015ETC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit				e3	NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524LB0XB1-SCB0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	8192 words			2/5.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		8KX8	8K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		65536 bit						.000002 Amp
S524A60X51-DIB	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	2048 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		2KX8	2K	-40 Cel				1010MMMR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit						.000001 Amp
K8S1015ETC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A60X51-SIT	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel				1010MMMR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C		16384 bit	1.8 V					.000001 Amp	4.9 mm
K8S1315EZC-FE1ET	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit					NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KM28C65BI-09	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified				65536 bit	4.5 V		64	e0		.0001 Amp			90 ns	5	YES
KS24A641I	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			65536 words	2			1	IN-LINE					2.54 mm	85 Cel		64KX1	64K	-40 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		65536 bit	1.8 V						9.2 mm
S524LB0DB1-R1	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8192 words	3.3			8	SMALL OUTLINE						85 Cel		8KX8	8K	-40 Cel						DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	5 ms	I2C		65536 bit	2 V
KS24C01ISTF	Samsung	EEPROM CARD	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		128X8	128	-40 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit				e0		.000005 Amp				2.7
S524C80D80-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		1KX8	1K	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C		8192 bit	2.5 V			e0			4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.