Samsung EEPROM 1,108

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S524C80D41-SIB0	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	512 words			2.5/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		512X8	512	-40 Cel				1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		4096 bit							.000005 Amp
KS24C081CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	2.5		2.2/5.5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		8KX1	8K	-25 Cel			TIN LEAD	1010DXXR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	10 ms	I2C		8192 bit	2.2 V			e0			.000005 Amp	4.92 mm
K8P2815UQC-GE4DT	Samsung	EEPROM CARD	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	55 mA	8388608 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA80,8X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-25 Cel	16,254	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B80	1						Not Qualified			BOTTOM/TOP	134217728 bit			8	e3	260	NOR TYPE	.00003 Amp		YES	70 ns	2.7	YES
KS24C080ISTF	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	2.5		2.2/5.5	1	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		8KX1	8K	-40 Cel			Tin/Lead (Sn/Pb)	1010DXXR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	10 ms	I2C		8192 bit	2.2 V			e0			.000005 Amp	4.92 mm
S524C80D80-RC	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		1KX8	1K	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	10 ms	I2C		8192 bit	2.5 V			e0				4.4 mm
S524AB0X91-RCU	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	4096 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	70 Cel		4KX8	4K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		32768 bit							.000001 Amp
KFM1G16Q2B-DEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3						Not Qualified				1073741824 bit			1K		260	NAND TYPE	.00005 Amp			76 ns	2.7	NO
KM93C56VGD	Samsung	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		2 mA	128 words	3.3		3	16	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel	3-STATE	128X16	128	0 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	100000 Write/Erase Cycles	1 MHz	3.94 mm	Not Qualified	10 ms	MICROWIRE		2048 bit	3 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.00005 Amp	5.02 mm
KM28C65AI-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified				65536 bit	4.5 V		64	e0			.0001 Amp			150 ns	5	YES
KM28C65PI-25	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel		8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDIP-T28	3			10000 Write/Erase Cycles			Not Qualified				65536 bit			32	e0			.0001 Amp			250 ns		YES
S524L50D51-SIT0	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	2048 words			2/5.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		2KX8	2K	-40 Cel				1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit							.000002 Amp
K8S1015EZC-DE1CT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524C80D41-RIB0	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	512 words			2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.3		EEPROMs	100	.635 mm	85 Cel		512X8	512	-40 Cel				1010DDMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		4096 bit							.000005 Amp
S524LB0DB1-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8192 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel		8KX8	8K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.1 MHz	3.95 mm	Not Qualified	5 ms	I2C		65536 bit	2 V							4.92 mm
K8S1315EBC-DE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524AB0XB1-SCU	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	8192 words			2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		8KX8	8K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		65536 bit							.000001 Amp
S524C20D20-R1	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	3.3			8	SMALL OUTLINE						85 Cel		256X8	256	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		2048 bit	2.5 V			e0
KM28C64I-25	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			8192 words	5			8	IN-LINE				10	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel						DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified				65536 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS								250 ns	5
KFG1G16Q2C-AEB8T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES	TIN SILVER COPPER		YES	BOTTOM		R-PBGA-B63	3						Not Qualified				1073741824 bit			1K	e1	260	NAND TYPE	.00005 Amp			9 ns	2.7	NO
S524AD0XF1-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	50	.635 mm	70 Cel		32KX8	32K	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				500000 Write/Erase Cycles			Not Qualified		I2C		262144 bit							.000001 Amp
K8S1215EZC-SC1CT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
K8S1115EBC-FE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524C80D80-DCB0	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	1024 words			2.5/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		1KX8	1K	-25 Cel				1010DMMR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		8192 bit							.000005 Amp
KS24C041ITTF	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2.2/5.5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.3		EEPROMs	100	.65 mm	85 Cel		4KX1	4K	-40 Cel			TIN LEAD	1010DDXR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		4096 bit	2.2 V			e0			.000005 Amp	4.4 mm
K8S1215EBC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A60X81-RIU	Samsung
S524C80D41-SI	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE						85 Cel		512X8	512	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		4096 bit	2.5 V			e0
KM28C16J-25	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		30 mA	2048 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs	10	1.27 mm	70 Cel		2KX8	2K	0 Cel		NO	TIN LEAD			QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm	Not Qualified				16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp	13.97 mm		250 ns	5	YES
KS24C041CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	4096 words	2.5		2.2/5.5	1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.3		EEPROMs	100	.65 mm	70 Cel		4KX1	4K	-25 Cel			TIN LEAD	1010DDXR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		4096 bit	2.2 V			e0			.000005 Amp	4.4 mm
KS24C020CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		3/5	1	SMALL OUTLINE	TSSOP8,.25		EEPROMs	100	.65 mm	70 Cel		2KX1	2K	-25 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		2048 bit	2.2 V			e0			.000005 Amp	4.4 mm
KM93C46GDI	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	64 words	5		5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	85 Cel	3-STATE	64X16	64	-40 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	100000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	10 ms	MICROWIRE		1024 bit	4.5 V	100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	4.9 mm
KM28C65BI-15	Samsung	EEPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		NO	TIN LEAD		YES	DUAL		R-PDIP-T28		5.5 V	5.59 mm			15.24 mm	Not Qualified				65536 bit	4.5 V		64	e0			.0001 Amp			150 ns	5	YES
KM28C16-20	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6		EEPROMs	10	2.54 mm	70 Cel		2KX8	2K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T24		5.5 V	4.44 mm			15.24 mm	Not Qualified				16384 bit	4.5 V	AUTOMATIC WRITE; 100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS	32	e0			.0001 Amp			200 ns	5	YES
KS24A010CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	2.5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		1KX1	1K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V							4.4 mm
KFM1G16Q2B-DEB6T	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	40 mA	67108864 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	1K	YES			YES	BOTTOM		R-PBGA-B63	3						Not Qualified				1073741824 bit			1K		260	NAND TYPE	.00005 Amp			76 ns	2.7	NO
KM93C46VGD	Samsung	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	64 words	5		3.3/5	16	SMALL OUTLINE	SOP8,.25		EEPROMs	10	1.27 mm	70 Cel	3-STATE	64X16	64	0 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	100000 Write/Erase Cycles	.25 MHz	3.94 mm	Not Qualified	15 ms	MICROWIRE		1024 bit	3 V	100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	5.02 mm
S524C20D20-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	256 words			2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	70 Cel		256X8	256	-25 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		2048 bit							.000005 Amp
KS24C081CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	8192 words	2.5		2.2/5.5	1	SMALL OUTLINE	TSSOP8,.3		EEPROMs	100	.65 mm	70 Cel		8KX1	8K	-25 Cel			TIN LEAD	1010DXXR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	10 ms	I2C		8192 bit	2.2 V			e0			.000005 Amp	4.4 mm
KS24C010CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel		1KX1	1K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	10 ms	I2C		1024 bit	2.2 V							4.92 mm
KS24A321CTTF	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			32768 words	2			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		32KX1	32K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		32768 bit	1.8 V							4.4 mm
K8S1315ETC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KM2816A-30	Samsung	EEPROM	COMMERCIAL	24	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			110 mA	2048 words	5	NO	5	8	IN-LINE	DIP24,.6		EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T24	3						Not Qualified				16384 bit				e0			.05 Amp			300 ns		NO
S524L50D51-SCT0	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	2048 words			2/5.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		2KX8	2K	-25 Cel				1010MMMR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		16384 bit							.000002 Amp
S524A40X10-SIT	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	128 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		128X8	128	-40 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V						.000001 Amp	4.9 mm
KM93C57GD	Samsung	EEPROM	COMMERCIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	5		5	8	SMALL OUTLINE	SOP8,.25	16	EEPROMs	10	1.27 mm	70 Cel	3-STATE	256X8	256	0 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDSO-G8		5.5 V	1.95 mm	100000 Write/Erase Cycles	1 MHz	3.94 mm	Not Qualified	10 ms	MICROWIRE		2048 bit	4.5 V			e0			.00005 Amp	5.02 mm
K8S1215ETC-FC1DT	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES			YES	BOTTOM		R-PBGA-B64	1						Not Qualified			TOP	536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KM28C256AJ-15	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		40 mA	32768 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		NO	TIN LEAD			QUAD		R-PQCC-J32		5.5 V	3.55 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	5 ms			262144 bit	4.5 V		64	e0			.0001 Amp	13.97 mm		150 ns	5	YES
KFWAGH6Q4M-DEB60	Samsung	EEPROM CARD	OTHER	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		256K	35 mA	1073741824 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		1GX16	1G	-30 Cel	4K	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B63	1						Not Qualified			INDEPENDENT	17179869184 bit			2K	e3		NAND TYPE	.0001 Amp			76 ns	2.7	NO

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.