Samsung EEPROM 1,108

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	I2C Control Byte	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
K8S1315EBC-SC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A40X41-RIT	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		512X8	512	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		4096 bit	1.8 V			e0				4.4 mm
KM93C46IGD	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			64 words	5			16	SMALL OUTLINE						85 Cel		64X16	64	-40 Cel						DUAL		R-PDSO-G8		5.5 V			1 MHz		Not Qualified	10 ms	MICROWIRE		1024 bit	4.5 V
S524C20D21-RCT	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			256 words	3.3			8	SMALL OUTLINE						70 Cel		256X8	256	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		2048 bit	2.5 V			e0
S524AD0XF1-RCT0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	32768 words			2/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	50	.635 mm	70 Cel		32KX8	32K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8				500000 Write/Erase Cycles			Not Qualified		I2C		262144 bit				e0	240		.000001 Amp
S524LB0D91-RCT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4096 words	3.3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	70 Cel		4KX8	4K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.1 MHz	3 mm	Not Qualified	5 ms	I2C		32768 bit	2 V							4.4 mm
KS24L641C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	65536 words	5		2/5.5	1	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		64KX1	64K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		65536 bit	2 V			e0			.000002 Amp	9.2 mm
KM28C65P20	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel		NO			YES	DUAL		R-PDIP-T28				10000 Write/Erase Cycles			Not Qualified				65536 bit			32				.0001 Amp			200 ns		YES
S524A40X41-DCU	Samsung
KS24A2561C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	262144 words	2.5		2/5	1	IN-LINE	DIP8,.3		EEPROMs	50	2.54 mm	70 Cel		256KX1	256K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDIP-T8		5.5 V	5.08 mm	500000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	5 ms	I2C		262144 bit	1.8 V			e0			.000001 Amp	9.2 mm
KS24A010C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1024 words	2.5			1	IN-LINE					2.54 mm	70 Cel		1KX1	1K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V							9.2 mm
KS24A2561CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	262144 words	2.5		2/5	1	SMALL OUTLINE	TSSOP8(UNSPEC)		EEPROMs	50	.65 mm	70 Cel		256KX1	256K	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.2 mm	500000 Write/Erase Cycles	1 MHz	3 mm	Not Qualified	5 ms	I2C		262144 bit	1.8 V			e0			.000001 Amp	4.4 mm
S524AD0XD1-DI	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			16384 words	2.5			8	IN-LINE					2.54 mm	85 Cel		16KX8	16K	-40 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		1 MHz	7.62 mm	Not Qualified	5 ms	I2C		131072 bit	1.8 V							9.2 mm
S524C80D41-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE					1.27 mm	70 Cel		512X8	512	-25 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V	1.95 mm		.1 MHz	3.95 mm	Not Qualified	10 ms	I2C		4096 bit	2.5 V			e0				4.92 mm
K8S1115EZC-DC1ET	Samsung	EEPROM CARD	COMMERCIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	70 Cel		32MX16	32M	0 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KS24A040IT	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4096 words	2.5			1	SMALL OUTLINE					.65 mm	85 Cel		4KX1	4K	-40 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		4096 bit	1.8 V							4.4 mm
S524C80D41-R1T	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			512 words	3.3			8	SMALL OUTLINE						85 Cel		512X8	512	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		4096 bit	2.5 V			e0
S524A60X81-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS			1024 words	2.5			8	IN-LINE					2.54 mm	70 Cel		1KX8	1K	-25 Cel						DUAL		R-PDIP-T8		5.5 V	5.08 mm		.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		8192 bit	1.8 V							9.2 mm
K8S1215EZC-FE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES				BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit						NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KS24A041ITTF	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			4096 words	2.5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		4KX1	4K	-40 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		4096 bit	1.8 V							4.4 mm
KM2864AH-30	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL			120 mA	8192 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T28	3						Not Qualified	2 ms			65536 bit				e0			.05 Amp			300 ns		YES
KM28C65AJI-12	Samsung	EEPROM		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL				8192 words	2.5			8	CHIP CARRIER					1.27 mm			8KX8	8K							QUAD		R-PQCC-J32			3.5 mm			11.43 mm	Not Qualified				65536 bit								13.97 mm			3
KM93C06I	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	16 words	5		5	16	IN-LINE	DIP8,.3		EEPROMs	10	2.54 mm	85 Cel		16X16	16	-40 Cel			TIN LEAD			DUAL	SOFTWARE	R-PDIP-T8		5.5 V	4.55 mm	100000 Write/Erase Cycles	1 MHz	7.62 mm	Not Qualified	30 ms	MICROWIRE		256 bit	4.5 V	100000 ERASE/WRITE CYCLES; DATA RETENTION = 10 YEARS		e0			.0001 Amp	9.185 mm
KM28C65AJ-12	Samsung	EEPROM	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		EEPROMs		1.27 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD		YES	QUAD		R-PQCC-J32		5.5 V	3.55 mm			11.43 mm	Not Qualified				65536 bit	4.5 V		64	e0			.0001 Amp	13.97 mm		120 ns	5	YES
S524A40X10-DC	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	128 words	2.5		2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		128X8	128	-25 Cel				1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V						.000001 Amp	9.2 mm
K8S1215EBC-DE1DT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	4,511	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B64	1						Not Qualified			BOTTOM	536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
KM28C64P25	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			30 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		8KX8	8K	0 Cel		NO				DUAL		R-PDIP-T28				10000 Write/Erase Cycles			Not Qualified	5 ms			65536 bit			32				.0001 Amp			250 ns		YES
S524C20D21-RCB0	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	256 words			3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	70 Cel		256X8	256	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		2048 bit							.000005 Amp
K8P2716UZC-QE4ET	Samsung	EEPROM CARD	OTHER	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		128K	55 mA	8388608 words		YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-25 Cel	128	YES	MATTE TIN		YES	DUAL		R-PDSO-G56	1						Not Qualified				134217728 bit			8/16	e3	260	NOR TYPE	.00004 Amp		YES	80 ns	2.7	YES
K8S1315EZC-SE1FT	Samsung	EEPROM CARD	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		64K	70 mA	33554432 words	1.8	YES	1.8	16	GRID ARRAY, FINE PITCH	BGA64,10X14,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-25 Cel	512	YES	MATTE TIN			BOTTOM		R-PBGA-B64	1						Not Qualified				536870912 bit				e3		NOR TYPE	.00003 Amp		YES	95 ns	2.7	YES
S524A40X21-SC	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS		3 mA	256 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		256X8	256	-25 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8		5.5 V	1.8 mm	1000000 Write/Erase Cycles	.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V						.000001 Amp	4.92 mm
S524A40X41-RIU	Samsung
S524AB0X91-DIU	Samsung	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	SERIAL			3 mA	4096 words			2/5	8	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	85 Cel		4KX8	4K	-40 Cel				1010DDDR		DUAL	HARDWARE	R-PDIP-T8				1000000 Write/Erase Cycles			Not Qualified		I2C		32768 bit							.000001 Amp
KFG2816Q1M-DEB	Samsung	EEPROM CARD	OTHER	67	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		32K	25 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA67,8X10,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-30 Cel	256	YES	MATTE TIN		YES	BOTTOM		R-PBGA-B67	1						Not Qualified				134217728 bit			512	e3		NAND TYPE	.00005 Amp			14.5 ns	2.7	NO
KS24A020CS	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel		2KX1	2K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V							4.92 mm
KS24C01CSTF	Samsung	EEPROM CARD	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	70 Cel		128X8	128	-25 Cel			TIN LEAD	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit				e0			.000005 Amp				2.7
S524C20D11-SIB0	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	128 words			3/5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		128X8	128	-40 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		1024 bit							.000005 Amp
KS24A011CT	Samsung	EEPROM	OTHER	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	2.5			1	SMALL OUTLINE					.65 mm	70 Cel		1KX1	1K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		1024 bit	1.8 V							4.4 mm
KS24C020C	Samsung	EEPROM	OTHER	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS		3 mA	2048 words	2.5		3/5	1	IN-LINE	DIP8,.3		EEPROMs	100	2.54 mm	70 Cel		2KX1	2K	-25 Cel			Tin/Lead (Sn/Pb)	1010DDDR		DUAL	HARDWARE/SOFTWARE	R-PDIP-T8		5.5 V	5.08 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	10 ms	I2C		2048 bit	2.2 V			e0			.000005 Amp	9.2 mm
KM2817A35	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		MOS	THROUGH-HOLE	PARALLEL				2048 words	5	NO	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel		2KX8	2K	0 Cel		NO	Tin/Lead (Sn/Pb)		YES	DUAL		R-PDIP-T28							Not Qualified	10 ms			16384 bit				e0						350 ns		NO
KM28C64A-15	Samsung	EEPROM	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		40 mA	8192 words	5	YES	5	8	IN-LINE	DIP28,.6		EEPROMs		2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		NO	TIN LEAD			DUAL		R-PDIP-T28		5.5 V	5.59 mm	100000 Write/Erase Cycles		15.24 mm	Not Qualified	5 ms			65536 bit	4.5 V		64	e0			.0001 Amp			150 ns	5	YES
KS24A021ITTF	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	2.5			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		2KX1	2K	-40 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		.4 MHz	3 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V							4.4 mm
KS24A021CSTF	Samsung	EEPROM	OTHER	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			2048 words	2.5			1	SMALL OUTLINE					1.27 mm	70 Cel		2KX1	2K	-25 Cel						DUAL		R-PDSO-G8		5.5 V	1.95 mm		.4 MHz	3.95 mm	Not Qualified	5 ms	I2C		2048 bit	1.8 V							4.92 mm
S524LB0X91-SITB0	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	4096 words			2/5.5	8	SMALL OUTLINE	SOP8,.25		EEPROMs	100	1.27 mm	85 Cel		4KX8	4K	-40 Cel				1010DDDR		DUAL	HARDWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		32768 bit							.000002 Amp
S524C80D81-SIT	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			1024 words	3.3			8	SMALL OUTLINE						85 Cel		1KX8	1K	-40 Cel			TIN LEAD			DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	10 ms	I2C		8192 bit	2.5 V			e0
S524LB0XB1-SIT	Samsung	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			8192 words	5			8	SMALL OUTLINE						85 Cel		8KX8	8K	-40 Cel						DUAL		R-PDSO-G8		5.5 V			.1 MHz		Not Qualified	5 ms	I2C		65536 bit	2 V	UPON REQUEST CLOCK FREQUENCY AVAILABLE UPTO 400KHZ
S524C80D40-RIB0	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL			3 mA	512 words			2.5/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		EEPROMs	100	.635 mm	85 Cel		512X8	512	-40 Cel				1010DDMR		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8				1000000 Write/Erase Cycles			Not Qualified		I2C		4096 bit							.000005 Amp
S524AD0XD1-RI	Samsung	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS			16384 words	2.5			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.65 mm	85 Cel		16KX8	16K	-40 Cel						DUAL		R-PDSO-G8		5.5 V	1.2 mm		1 MHz	3 mm	Not Qualified	5 ms	I2C		131072 bit	1.8 V							4.4 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.