Xilinx EEPROM 608

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
XQ17V16CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		33 MHz	16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm	20 ns
XC18V512PCG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	524288 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V128SOG20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	SMALL OUTLINE				1.27 mm	85 Cel		128KX1	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	131072 bit	3 V		e3					12.8 mm	20 ns
XC1802PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	2097152 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	10	1.27 mm	70 Cel		2MX1	2M	0 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	16.5862 mm	Not Qualified	2097152 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	16.5862 mm	45 ns
XC18512PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		512KX1	512K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V04PCG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e3					16.5862 mm	20 ns
XQR1701LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e3					16.51 mm
XC18V01VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e3					10 mm	15 ns
XC18256PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		256KX1	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XQ17V16CCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	CHIP CARRIER				1.27 mm	125 Cel		2MX8	2M	-55 Cel		QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			16.51 mm	20 ns
XQ1701LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-PRF-38535	J BEND	SERIAL	SYNCHRONOUS	10 mA	1048576 words	COMMON	3.3	3.3	1	CHIP CARRIER	LCC44(UNSPEC)	OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0				.0001 Amp	16.51 mm	45 ns	3.3
XQ1701LSO20N	Xilinx	CONFIGURATION MEMORY	MILITARY	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	MIL-PRF-38535	GULL WING	SERIAL	SYNCHRONOUS	5 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4	OTP ROMs		1.27 mm	125 Cel	3-STATE	1MX1	1M	-55 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.00005 Amp	12.8 mm
XC18V512PCG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V		e3					8.9662 mm	15 ns
XC18V04PCG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e3					16.5862 mm	20 ns
XC18V02PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	2097152 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XQ17V16VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm	20 ns
XC18V512PCG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V		e3					8.9662 mm	15 ns
XC18V01VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e0					10 mm	15 ns
XC18128SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		128KX1	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V04PC44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	4194304 bit	3 V		e0					16.5862 mm	20 ns
XC18V256PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	262144 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns
XC18V256VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	32768 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	262144 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XQ1704LCCG44B	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XQ1704LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XC18V128VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK, THIN PROFILE				.8 mm	70 Cel		128KX1	128K	0 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	131072 bit	3 V							10 mm	20 ns
XQR18V04CCG44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		512 words		3.3		8	CHIP CARRIER				1.27 mm	125 Cel		512X8	512	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4096 bit	3 V		e3					16.51 mm
XQR17V16CC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	CHIP CARRIER	LDCC44,.7SQ	OTP ROMs		1.27 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	16777216 bit	3 V		e0				.001 Amp	16.51 mm
XC1804PC44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	4194304 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC44,.7SQ	Flash Memories	10	1.27 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	16.5862 mm	45 ns
XC18V128VQG4I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QFP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK					85 Cel		128KX1	128K	-40 Cel	MATTE TIN	QUAD	R-PQFP-G44	3	3.6 V					Not Qualified	131072 bit	3 V		e3						20 ns
XC1804VQ44C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	4194304 words		3.3	2.5/3.3,3.3	1	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	70 Cel		4MX1	4M	0 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	15 MHz	10 mm	Not Qualified	4194304 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	240	NOR TYPE	.0001 Amp	10 mm	45 ns
XQR18V04CCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	40k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		512 words		3.3		8	CHIP CARRIER				1.27 mm	125 Cel		512X8	512	-55 Cel		QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4096 bit	3 V			NOT SPECIFIED	NOT SPECIFIED			16.51 mm
XC18128PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	70 Cel		128KX1	128K	0 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm		15 MHz	8.9662 mm	Not Qualified	131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18512SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		512KX1	512K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XQR1704LCCG44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE		CERAMIC, METAL-SEALED COFIRED	YES	1		MIL-PRF-38535	J BEND		SYNCHRONOUS		4194304 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		4MX1	4M	-55 Cel	MATTE TIN	QUAD	S-CQCC-J44		3.6 V	4.826 mm			16.51 mm	Not Qualified	4194304 bit	3 V		e3					16.51 mm
XC18V512VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	524288 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	15 ns
XC18128PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	30 mA	131072 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm		15 MHz	8.9662 mm	Not Qualified	131072 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V512VQ44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e0					10 mm	15 ns
XC18V512VQG44C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3					10 mm	15 ns
XC18V02PC44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V		e0					16.5862 mm	20 ns
XC1801SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	70 Cel		1MX1	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V512SO20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE				1.27 mm	85 Cel		64KX8	64K	-40 Cel		DUAL	R-PDSO-G20		3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V							12.8 mm	15 ns
XC18V02VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE				.8 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V		e0					10 mm	20 ns
XQR1701LCC44M	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCJ	SQUARE	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	SERIAL	SYNCHRONOUS		1048576 words		3.3		1	CHIP CARRIER				1.27 mm	125 Cel		1MX1	1M	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	S-CQCC-J44		3.6 V	4.826 mm		15 MHz	16.51 mm	Not Qualified	1048576 bit	3 V		e0					16.51 mm
XC1801SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4	Flash Memories	10	1.27 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V01PCG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V		e3					8.9662 mm	15 ns
XC18V512SO20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4	Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC18V04PC44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	CHIP CARRIER				1.27 mm	85 Cel		512KX8	512K	-40 Cel		QUAD	S-PQCC-J44		3.6 V	4.572 mm			16.5862 mm	Not Qualified	4194304 bit	3 V							16.5862 mm	20 ns
XC18V512PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC20,.4SQ	Flash Memories	10	1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	8.9662 mm	Not Qualified	524288 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	8.9662 mm	15 ns

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.