Xilinx EEPROM 608

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Total Dose (V)	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
XC18V02VQ44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	2097152 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC17128EPDG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	131072 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	128KX1	128K	0 Cel	Matte Tin (Sn)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	131072 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	250		.00005 Amp	9.3599 mm
XC18V02PCG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	20	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	2097152 bit	3 V		e3	30	245	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XQF32PVOG48M	Xilinx	CONFIGURATION MEMORY	MILITARY	48	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	40 mA	33554432 words		1.8	1.8/3.3,1.8	1	SMALL OUTLINE	TSSOP48,.8,20		Flash Memories	20	.5 mm	125 Cel		32MX1	32M	-55 Cel	NICKEL PALLADIUM GOLD	DUAL	R-PDSO-G48	3	2 V		20000 Write/Erase Cycles			Not Qualified	33554432 bit	1.65 V		e4	30	260	NOR TYPE			30 ns
XC17256EPD8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	10 mA	262144 words	COMMON	5	5	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	70 Cel	3-STATE	256KX1	256K	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	5.25 V	4.5974 mm		15 MHz	7.62 mm	Not Qualified	262144 bit	4.75 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e0	30	225		.00005 Amp	9.3599 mm
XC1765ELVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	TSOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	64KX1	64K	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.1938 mm		2.5 MHz	3.937 mm	Not Qualified	65536 bit	3 V	USED FOR STORING THE CONFIGURATION BITSTREAMS OF XILINX FPGAS	e3	30	260		.00005 Amp	4.9276 mm
XC17S200APD8I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR		PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	15 mA	1335840 words	COMMON	3.3	3.3	1	IN-LINE	DIP8,.3		OTP ROMs		2.54 mm	85 Cel	3-STATE	1335840X1	1335840	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDIP-T8	1	3.6 V	4.5974 mm			7.62 mm	Not Qualified	1335840 bit	3 V		e0	30	225		.001 Amp	9.3599 mm
XC17S50AVO8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	559200 bit	3 V		e0	30	225		.001 Amp	4.9 mm
XC17S50AVOG8C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	8	TSOP2	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	559200 words	COMMON	3.3	3.3	1	SMALL OUTLINE, THIN PROFILE	SOP8,.25		OTP ROMs		1.27 mm	70 Cel	3-STATE	559200X1	559200	0 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G8	3	3.6 V	1.2 mm			3.9 mm	Not Qualified	559200 bit	3 V		e3	30	260		.001 Amp	4.9 mm
XC17V01SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	1	SMALL OUTLINE	SOP20,.4		OTP ROMs		1.27 mm	85 Cel	3-STATE	1MX1	1M	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm		15 MHz	7.5 mm	Not Qualified	1048576 bit	3 V		e0	30	225		.001 Amp	12.8 mm
XC18V01PC20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V		e0					8.9662 mm	15 ns
XC18V02VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		256KX8	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	2097152 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04PC44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	20000 Write/Erase Cycles	20 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V04VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	20	.8 mm	85 Cel		512KX8	512K	-40 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	10 mm	20 ns
XC18V04VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK						85 Cel		512KX8	512K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V			33 MHz			4194304 bit	3 V		e3	30	260
XC18V02VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	85 Cel		256KX8	256K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	10000 Write/Erase Cycles	33 MHz	10 mm	Not Qualified	2097152 bit	3 V		e0	30	240	NOR TYPE	.01 Amp	10 mm	20 ns
XC18512SO20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	524288 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	70 Cel		512KX1	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	524288 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XQR17V16CK44V	Xilinx	CONFIGURATION MEMORY	MILITARY	44	QCCN	RECTANGULAR	50k Rad(Si)	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		16777216 words		3.3		1	CHIP CARRIER		1				125 Cel		16MX1	16M	-55 Cel		QUAD	R-CQCC-N44		3.6 V			20 MHz			16777216 bit	3 V
XC18V01SOG20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	3 V		e3					12.8 mm	15 ns
XC18V04PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	524288 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	10	1.27 mm	85 Cel		512KX8	512K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	16.5862 mm	Not Qualified	4194304 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V01SO20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	3 V		e0					12.8 mm	15 ns
XC18V01SO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	3 V		e0					12.8 mm	15 ns
XC18256SO20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	30 mA	262144 words		3.3	2.5/3.3,3.3	1	SMALL OUTLINE	SOP20,.4		Flash Memories	10	1.27 mm	85 Cel		256KX1	256K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm	10000 Write/Erase Cycles	15 MHz	7.5 mm	Not Qualified	262144 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	12.8 mm	45 ns
XC18V512SO20C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	524288 bit	3 V		e0					12.8 mm	15 ns
XQ17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm		33 MHz	10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm	20 ns
XC18V01VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e3					10 mm	15 ns
XC18V02VQ44C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	S-PQFP-G44		3.6 V	1.2 mm			10 mm	Not Qualified	2097152 bit	3 V							10 mm	20 ns
XC18V512SOG20C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	65536 words		3.3	2.5/3.3,3.3	8	SMALL OUTLINE	SOP20,.4		Flash Memories	20	1.27 mm	85 Cel		64KX8	64K	-40 Cel	Matte Tin (Sn)	DUAL	R-PDSO-G20	3	3.6 V	2.6416 mm	20000 Write/Erase Cycles	33 MHz	7.5184 mm	Not Qualified	524288 bit	3 V		e3	30	260	NOR TYPE	.01 Amp	12.827 mm	15 ns
XC1801PC20I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS	30 mA	1048576 words		3.3	2.5/3.3,3.3	1	CHIP CARRIER	LDCC20,.4SQ		Flash Memories	10	1.27 mm	85 Cel		1MX1	1M	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.57 mm	10000 Write/Erase Cycles	15 MHz	8.9662 mm	Not Qualified	1048576 bit	3 V	SERIAL MODE ALSO AVAILABLE	e0	30	225	NOR TYPE	.0001 Amp	8.9662 mm	45 ns
XC18V01VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	1048576 bit	3 V		e0					10 mm	15 ns
XC18V512VQ44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e0					10 mm	15 ns
XC18V512VQG44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3	30	260			10 mm	15 ns
XQ18V04VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	50 mA	524288 words		3.3	2.5/3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		Flash Memories	10	.8 mm	125 Cel		512KX8	512K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm	20000 Write/Erase Cycles	20 MHz	10 mm	Not Qualified	4194304 bit	3 V		e0	30	240	NOR TYPE	.02 Amp	10 mm
XC18V01SOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	SOP	RECTANGULAR		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-PDSO-G20	3	3.6 V	2.65 mm			7.5 mm	Not Qualified	1048576 bit	3 V		e3					12.8 mm	15 ns
XC18V512VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	524288 bit	3 V		e3					10 mm	15 ns
XC18V01PC20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	1048576 bit	3 V		e0					8.9662 mm	15 ns
XC18V02PC44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS	25 mA	262144 words		3.3	2.5/3.3,3.3	8	CHIP CARRIER	LDCC44,.7SQ		Flash Memories	10	1.27 mm	85 Cel		256KX8	256K	-40 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm	10000 Write/Erase Cycles	33 MHz	16.5862 mm	Not Qualified	2097152 bit	3 V		e0	30	225	NOR TYPE	.01 Amp	16.5862 mm	20 ns
XC18V512PC20C0799	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		64KX8	64K	-40 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V							8.9662 mm	15 ns
XQ18V04VQG44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	40k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		512KX8	512K	-55 Cel	Matte Tin (Sn)	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3	30	260			10 mm
XC18V02PCG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		262144 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		256KX8	256K	-40 Cel	MATTE TIN	QUAD	S-PQCC-J44	3	3.6 V	4.572 mm			16.5862 mm	Not Qualified	2097152 bit	3 V		e3					16.5862 mm	20 ns
XC18V04VQG44C0901	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		524288 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	85 Cel		512KX8	512K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	4194304 bit	3 V		e3					10 mm	20 ns
XQR17V16VQ44N	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS	100 mA	2097152 words	COMMON	3.3	3.3	8	FLATPACK, THIN PROFILE	TQFP44,.47SQ,32		OTP ROMs		.8 mm	125 Cel	3-STATE	2MX8	2M	-55 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e0	30	240		.001 Amp	10 mm
XC18V128PC20C	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	CHIP CARRIER					1.27 mm	70 Cel		128KX1	128K	0 Cel		QUAD	S-PQCC-J20		3.6 V	4.572 mm			8.9662 mm	Not Qualified	131072 bit	3 V							8.9662 mm	20 ns
XC18V512PC20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL/SERIAL	SYNCHRONOUS		65536 words		3.3		8	CHIP CARRIER					1.27 mm	85 Cel		64KX8	64K	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm			8.9662 mm	Not Qualified	524288 bit	3 V		e0					8.9662 mm	15 ns
XC18V128VQ44I	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	44	TQFP	SQUARE		PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		131072 words		3.3		1	FLATPACK, THIN PROFILE					.8 mm	85 Cel		128KX1	128K	-40 Cel	TIN LEAD	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	131072 bit	3 V		e0					10 mm	20 ns
XCCACE128-I	Xilinx	CONFIGURATION MEMORY	COMMERCIAL	50		RECTANGULAR		UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SERIAL	SYNCHRONOUS		8388608 words		3.3		16	MICROELECTRONIC ASSEMBLY						60 Cel		8MX16	8M	0 Cel		UNSPECIFIED	R-XXMA-X50		3.6 V	3.3 mm		33 MHz	36 mm	Not Qualified	134217728 bit	3 V							42.8 mm
XQR17V16VQG44R	Xilinx	CONFIGURATION MEMORY	MILITARY	44	TQFP	SQUARE	50k Rad(Si)	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL/SERIAL	SYNCHRONOUS		2097152 words		3.3		8	FLATPACK, THIN PROFILE					.8 mm	125 Cel		2MX8	2M	-55 Cel	MATTE TIN	QUAD	S-PQFP-G44	3	3.6 V	1.2 mm			10 mm	Not Qualified	16777216 bit	3 V		e3	30	260			10 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.