UVPROM EPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TTV27C256N-20M-5	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	200 ns	12.75
5962-9065802KX	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			55 ns
M87C257-12F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp	36.92 mm	120 ns
5962-8680505QA	STMicroelectronics	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	125 Cel		64KX16	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		52.45 mm	150 ns
M27128A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0			300 ns	12.5
M87C257-60F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		60 ns
WS57C49C-45DMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.72 mm	15.24 mm	Not Qualified	65536 bit			e0	.035 Amp	32.135 mm	45 ns
WS57C51C-45CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		16KX8	16K	-55 Cel		QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	131072 bit	4.5 V				13.97 mm	45 ns
WS57C43C-70TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		4KX8	4K	-55 Cel		DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V				32.005 mm	70 ns
M87C257-10F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		100 ns
M27V201-250L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words				8	CHIP CARRIER, WINDOW			1.27 mm	85 Cel		256KX8	256K	-40 Cel		QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	3 V				13.97 mm	250 ns
M87C257-20F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp	36.92 mm	150 ns
5962-8606306YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		32KX8	32K	-55 Cel		QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V				13.97 mm	120 ns
M27W512-200F6E	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		3		8	IN-LINE, WINDOW			2.54 mm	85 Cel		64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	2.7 V		e3		36.92 mm	100 ns
M27W401-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	524288 words	COMMON	3	3/3.3	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	41.885 mm	80 ns
M2764A-45F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			450 ns	12.5
5962-87529023X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		2048 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		2KX8	2K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	16384 bit	4.5 V		e0		11.43 mm
M27V201-180F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	3 V		e3	.00002 Amp	41.885 mm	180 ns
M27W101-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3	.000015 Amp	41.885 mm	80 ns
M27V102-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	90 ns
M87C257-80XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	80 ns
M27W202-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	131072 words	COMMON	3.3	3/3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V		e3	.000015 Amp	52.195 mm	100 ns
WS57C128FB-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	139 mA	16384 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32	5.5 V	4.06 mm	11.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0005 Amp	13.945 mm	45 ns	12.5
M27V256-200F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	10 mA	32768 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	3 V		e0	.00001 Amp	36.92 mm	200 ns	12.75
M87C257-80XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
TTV27C256N-20M-6	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	200 ns	12.75
M87C257-80XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
M27512-2F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			200 ns
WS57C256F-35C	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0	.0002 Amp	13.97 mm	35 ns	12.75
TTV27C256N-12M-9	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
M27V101-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e0	.00002 Amp	41.885 mm	100 ns
5962-90658043X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		4KX8	4K	-55 Cel		QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	32768 bit	4.5 V				11.455 mm	35 ns
M27V101-250L1	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	3 V		e0	.00002 Amp	13.97 mm	250 ns
WS57C291C-35T	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.025 Amp	32.005 mm	35 ns	12.75
M27W512-80F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	2.7 V	ACCESS TIME 70 NANO SECS AT VCC 3V TO 3.6V	e3	.000015 Amp	36.92 mm	80 ns
5962-8765002JA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	32.135 mm	55 ns	13.5
WS57C71C-45CI	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	OTP ROMs	1.27 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0	.025 Amp	13.97 mm	45 ns
M87C257-45F7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		45 ns
5962-9065801KA	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words		5		8	FLATPACK				125 Cel		4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24	5.5 V			Not Qualified	32768 bit	4.5 V		e0			70 ns
M27V322-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	EPROMs	2.54 mm	85 Cel	3-STATE	2MX16	2M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.63 V	5.72 mm	15.24 mm	Not Qualified	33554432 bit	2.97 V		e3	.00006 Amp	54.635 mm	120 ns
M27V402-200F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.195 mm	200 ns
M27V402-200F5	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.195 mm	200 ns
M27512-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			200 ns
M87C257-80F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		80 ns
WS57C256F-35T	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	.0002 Amp	37.085 mm	35 ns	12.75
M87C257-15F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		150 ns
WS57C49C-45TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	107 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.08 mm	7.62 mm	Not Qualified	65536 bit			e0	.035 Amp	32.005 mm	45 ns
M27V201-200L1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		262144 words				8	CHIP CARRIER, WINDOW			1.27 mm	70 Cel		256KX8	256K	0 Cel		QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	3 V				13.97 mm	200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.