UVPROM EPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
5962-8606308YX	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	125 Cel		32KX8	32K	-55 Cel		QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V					13.97 mm	70 ns
M87C257-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp		150 ns
WS57LV291C-90T	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	2048 words	COMMON	3.3	5	8	IN-LINE	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	3.6 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	3 V	e0			.025 Amp	32.005 mm	90 ns	12.75
M87C257-12F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp		120 ns
M27V401-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE			2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V					41.885 mm	200 ns
M87C257-20F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp		150 ns
WS57C51C-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	139 mA	16384 words		5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32	5.5 V	4.06 mm	11.24 mm	Not Qualified	131072 bit	4.5 V	e0				13.945 mm	45 ns
WS27C010L-12CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	3.3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e0			.0001 Amp	13.97 mm	120 ns
TTV27C256N-70C-26	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28				Not Qualified	262144 bit					.0001 Amp		70 ns	12.75
TS27C64A-20CQ	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	e0			.0001 Amp		200 ns	12.5
M27C4002-10XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V					52.195 mm	100 ns
M27C1024-80XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	80 ns
M27C256B-80XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	80 ns	12.75
M27C256B-60XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	60 ns	12.75
M27C256B-90XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	90 ns	12.75
M27C2001-25L1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V	e4			.0001 Amp	13.97 mm	150 ns
M27C1024-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns
M27C4002-12J1	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	16.51 mm	120 ns
M27C801-120F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	100 ns
M27C2001-80L1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V	e0			.0001 Amp	13.97 mm	80 ns
M27C512-25F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C4002-70XJ6	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	16.51 mm	70 ns
M27C256B-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C801-100F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	1048576 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e3			.0001 Amp	41.885 mm	100 ns
M27C512-80F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	80 ns
M27C1024-90F7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	80 ns
M27C2001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3		245	.0001 Amp	41.885 mm	120 ns
M27C4002-90XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE			2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-CDIP-T40	5.5 V	5.72 mm	13.2 mm	Not Qualified	4194304 bit	4.5 V					52.195 mm	90 ns
M27C1024-45F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	45 ns
M27C1024-15XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C2001-20XF1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3				41.885 mm	200 ns
M27C1001-60XL3TR	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e0			.0001 Amp	13.97 mm	60 ns
M27C1024-15XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3			.0001 Amp	52.195 mm	100 ns
M27C1001-60XL3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V	e4			.0001 Amp	13.97 mm	60 ns
M27C1024-35F1X	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	35 ns
M27C1001-20F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	41.885 mm	120 ns
M27C4002-15XJ1X	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	16.51 mm	150 ns
M27C1024-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	100 ns
M27C4001-35F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e3			.0001 Amp	41.885 mm	35 ns
M27C4002-80XJ1TR	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ	EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V	e3			.0001 Amp	16.51 mm	80 ns
M27C1001-35L3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V	e4			.0001 Amp	13.97 mm	35 ns
M27C1011-12XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN	DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3				36.92 mm	120 ns
M2732A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.25 V	5.715 mm	15.24 mm	Not Qualified	32768 bit	4.75 V	e0				31.75 mm	300 ns	21
M27C512-90XF1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e3			.0001 Amp	36.92 mm	90 ns
M27C2001-25F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3				41.885 mm	250 ns
M27C256B-15F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C512-45XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	45 ns
M27C1024-20F7	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3			.0001 Amp	52.195 mm	100 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.