28 EPROM 1,300

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C512-60XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0	.0001 Amp	36.92 mm	60 ns
M27C256B-25XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3	.0001 Amp	36.92 mm	150 ns	12.75
M27C256B-15XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3	.0002 Amp	36.92 mm	150 ns	12.75
M27C512-45F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns
M27C512-45F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns
M27C256B-45F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns	12.75
M27C512-20F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0	.0001 Amp	36.92 mm	200 ns
27C512/BXA-20	NXP Semiconductors	UVPROM	MILITARY	28		RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE				125 Cel	3-STATE	64KX8	64K	-55 Cel		DUAL	R-CDIP-T28	5.5 V			Not Qualified	524288 bit	4.5 V				200 ns
8510201YX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
8510202ZX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
8510203YA	NXP Semiconductors	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T28	5.5 V				65536 bit	4.5 V				200 ns
8510202ZA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
8510201ZX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
8510201YA	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
8510203YX	NXP Semiconductors	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE				125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T28	5.5 V			Not Qualified	65536 bit	4.5 V				200 ns
8510202YX	NXP Semiconductors	UVPROM		28			CERAMIC, GLASS-SEALED		1	CMOS						16384 words				8	IN-LINE						16KX8	16K			DUAL						131072 bit					450 ns
TMM27512AD-250	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			250 ns
TMM27256D-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	21
TMM27256AD-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	12.5
TMM27512AD-200	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			200 ns
TMM27512D-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			200 ns
TMM27128DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			200 ns	21
TMM27256BD-15	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			150 ns	12.5
TMM27256BD-200	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			200 ns	12.5
TMM2764DI	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			250 ns	21
TMM27256AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	12.5
TMM2764AD-150	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			150 ns	12.5
TC57512AD-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0		36.83 mm	150 ns
TMM27256BDI-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			150 ns	12.5
TMM27128D-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	21
TMM27128ADI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	12.5
TMM27256BD-20	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			200 ns	12.5
TMM27256DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	21
TMM27256DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	21
TMM27512ADI-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			200 ns
TMM27512AD-25	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			250 ns
TMM2764DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			150 ns	21
TC57256AD-150	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		36.83 mm	150 ns
TMM27256BD-150	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			150 ns	12.5
TMM2764AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			200 ns	12.5
TC57256AD-120	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		36.83 mm	120 ns
TMM27128ADI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			200 ns	12.5
TMM27512DI-25	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			250 ns
TMM27128AD-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	12.5
TC57512AD-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0		36.83 mm	200 ns
TMM27128AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			200 ns	12.5
TC57256AD-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0		36.83 mm	200 ns
TMM2764DI-2	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			200 ns	21

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.