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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TMM27256D-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	21
TC57256AD-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0		36.83 mm	150 ns
TMM27128D-25	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			250 ns	21
TMM27256AD-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	12.5
TC57256AD-12	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0		36.83 mm	120 ns
TMM27512D-25	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			120 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			250 ns
TC57H256D-85	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		36.83 mm	85 ns
TMM27512AD-20	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			200 ns
TMM27256BDI-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			200 ns	12.5
TC57H256D-70	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0		36.83 mm	70 ns
TMM2764D-2	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			200 ns	21
TMM27128DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	21
TMM27512ADI-25	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			250 ns
TMM27512DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			200 ns
TMM27256AD-150	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	12.5
TMM27512D-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			120 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			200 ns
TMM2764D-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			150 ns	21
TMM27512D-250	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			250 ns
TMM27128AD-150	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	12.5
HN27128AG-30	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			36.83 mm	300 ns
HN4827128G-45	Renesas Electronics	UVPROM		28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm		131072 bit	4.75 V	e0	.035 Amp	36.83 mm	450 ns	12.5
HN27512G-30	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.89 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			36.83 mm	300 ns
UPD27C256AD-15	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	12.5
UPD2764D	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			250 ns	21
HN27128AG-25	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			36.83 mm	250 ns
HN27128AG-20	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			36.83 mm	200 ns
UPD27256D-3	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			300 ns	21
HN27C512G-17	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.89 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			36.83 mm	170 ns
HN4827128G-25	Renesas Electronics	UVPROM		28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm		131072 bit	4.75 V	e0	.035 Amp	36.83 mm	250 ns	12.5
UPD27128D-3	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			300 ns	21
HN27256G-30	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			36.83 mm	300 ns
UPD27C64D-25	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			250 ns	21
HN27512G-25	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.89 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			36.83 mm	250 ns
UPD2764D-3	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			300 ns	21
UPD27C512D-25	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			250 ns
HN4827128G-30	Renesas Electronics	UVPROM		28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6		2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm		131072 bit	4.75 V	e0	.035 Amp	36.83 mm	300 ns	12.5
UPD27C256AD-12	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			120 ns	12.5
UPD27C256AD-20	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	12.5
UPD27128D-2	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			200 ns	21
UPD27C512D-20	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			200 ns
HN27128AG-17	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.25 V	5.89 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			36.83 mm	170 ns
UPD2764D-4	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			400 ns	21
UPD27128D-4	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			450 ns	21
UPD27C256D-15	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	21
UPD27C64D-20	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			200 ns	21
UPD27C64D-30	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			300 ns	21
HN27C512G-20	Renesas Electronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		64KX8	64K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.89 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			36.83 mm	200 ns
UPD27128D	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			250 ns	21

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.