32 EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
EPC2TI32N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	7 mm		3.3
M27C1001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-12F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C1001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	150 ns
EPC2TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.0001 Amp	7 mm		3.3
M27C1001-10F1L	STMicroelectronics		COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	131072 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	1048576 bit			e0			.0001 Amp		100 ns
EPC1441TC32N	Intel	CONFIGURATION MEMORY	COMMERCIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	70 Cel	3-STATE	440800X1	440800	0 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.00006 Amp	7 mm		3.3
EPC2TI32	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	7 mm		3.3
M27C4001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32		5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
M27C2001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3	10	245	.0001 Amp	41.885 mm	100 ns
M27C1001-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	45 ns
M27C1001-45F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	45 ns
EPC2TC32	Intel	CONFIGURATION MEMORY		32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	70 Cel	3-STATE	1695680X1	1695680	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	30	235	.0001 Amp	7 mm		3.3
M27C4001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C4001-12F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
AM27C010-90DC	Rochester Electronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel		DUAL	R-CDIP-T32		5.5 V	5.588 mm	15.24 mm		1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		42.1005 mm	90 ns
AM27C010-90DCB	Rochester Electronics	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE			2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	5.588 mm	15.24 mm		1048576 bit	4.5 V		e0				42.1005 mm	90 ns
M27C4001-80XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3		245	.0001 Amp	41.885 mm	80 ns
MR27C6425	Intel	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			30 mA	8192 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					Not Qualified	65536 bit			e0			.00014 Amp		250 ns	12.5
WS57C256F-35L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	13.945 mm	35 ns	12.75
WS57C256F-45L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	70 Cel		32KX8	32K	0 Cel		QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V						13.945 mm	45 ns
WS57C256F-55CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55	EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	13.97 mm	55 ns	12.5
WS57C256F-55L	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	QUAD	R-CQCC-J32		5.5 V	4.06 mm	11.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0002 Amp	13.945 mm	55 ns	12.75
AM27C020-70DC	Spansion	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words				8	IN-LINE			2.54 mm	70 Cel		256KX8	256K	0 Cel		DUAL	R-CDIP-T32			5.58 mm	15.24 mm		2097152 bit							42.1 mm	70 ns
M27C1001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
AT27C010-15KC	Atmel	UVPROM	COMMERCIAL	32	WQCCJ	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LDCC32,.5X.6	EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	QUAD	R-CQCC-J32	1	5.5 V	4.24 mm	11.55 mm	Not Qualified	1048576 bit	4.5 V		e0			.00001 Amp	14.1 mm	150 ns
D27C040-150V10	Intel	UVPROM	COMMERCIAL	32	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T32					Not Qualified	4194304 bit			e0			.0001 Amp		150 ns
MBM27256-25	Fujitsu Semiconductor America	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	NMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW			1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		QUAD	R-CQCC-N32		5.25 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.75 V						13.97 mm	250 ns
AT27C010-10DC	Atmel	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	1	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42.2 mm	100 ns
NM27C010Q120	National Semiconductor	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T32		5.5 V	5.969 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp		120 ns
SMJ27C010A-20J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	200 ns
5962-8961406QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
5962-8961406QXX	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					120 ns
5962-8961403QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C010-30JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	300 ns
SMJ27C010-20JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C010A-12JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	120 ns
SMJ27C010A-20JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	200 ns
5962-9175204MXC	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42.2 mm	150 ns
SMJ27C010A-12J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	120 ns
SMJ27C040-12JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	512KX8	512K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	120 ns
SMJ27C010A-15J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	150 ns
5962-8961405QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		150 ns
SMJ27C010-25JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		250 ns
5962-9175205MXX	Texas Instruments	UVPROM	MILITARY	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	COMMON	5	5	8	IN-LINE	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp		120 ns
SMJ27C040-15JM	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	125 Cel	3-STATE	512KX8	512K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	150 ns
5962-9175204MXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW			2.54 mm	125 Cel		512KX8	512K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42.2 mm	150 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.