32 EPROM 1,425

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

TC574000D-20

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

200 ns

TC574000AD-120

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

120 ns

TC571000D-15

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

150 ns

T4773

Toshiba

UVPROM

INDUSTRIAL

32

WQCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

32768 words

5

8

CHIP CARRIER, WINDOW

85 Cel

32KX8

32K

-40 Cel

TIN LEAD

QUAD

S-CQCC-N32

5.5 V

Not Qualified

262144 bit

4.5 V

e0

200 ns

TC571001AD-12

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

120 ns

TC574000D-120

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

120 ns

TC574000AD-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

150 ns

TC574000D-12

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

e0

42 mm

120 ns

TC57H1001AD-100

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

100 ns

TC571000AD-12

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

120 ns

TC57H1000AD-85

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

85 ns

TC574000DI-150

Toshiba

UVPROM

INDUSTRIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

150 ns

TC571001D-200

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

200 ns

TC571000D-200

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

200 ns

TC57H1001AD-85

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

85 ns

UPD27C1001AD-20

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

200 ns

UPD27C1001AD-12

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

120 ns

UPD27C4001DZ-17

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.0001 Amp

170 ns

UPD27C256AK-20

Renesas Electronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

262144 bit

e0

200 ns

12.5

UPD27C4001DZ-20

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.0001 Amp

200 ns

UPD27C1001AD-15

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

150 ns

UPD27C2001D-15

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

262144 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

2097152 bit

e0

.0001 Amp

150 ns

UPD27C256AK-12

Renesas Electronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

262144 bit

e0

120 ns

12.5

UPD27C256AK-15

Renesas Electronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-XQCC-N32

Not Qualified

262144 bit

e0

150 ns

12.5

UPD27C2001D-20

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

262144 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

2097152 bit

e0

.0001 Amp

200 ns

UPD27C1000AD-12

Renesas Electronics

COMMERCIAL EXTENDED

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

80 Cel

3-STATE

128KX8

128K

-10 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

120 ns

UPD27C1000AD-20

Renesas Electronics

COMMERCIAL EXTENDED

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

80 Cel

3-STATE

128KX8

128K

-10 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

200 ns

UPD27C1000AD-15

Renesas Electronics

COMMERCIAL EXTENDED

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

40 mA

131072 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

80 Cel

3-STATE

128KX8

128K

-10 Cel

DUAL

R-XDIP-T32

Not Qualified

1048576 bit

.0001 Amp

150 ns

UPD27C2001D-17

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

262144 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

2097152 bit

e0

.0001 Amp

170 ns

UPD27C4001DZ-15

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.0001 Amp

150 ns

EPC1441TI32N

Altera

CONFIGURATION MEMORY

INDUSTRIAL

32

TQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

440800 words

3.3

3.3/5

1

FLATPACK, THIN PROFILE

TQFP32,.35SQ,32

OTP ROMs

.8 mm

85 Cel

3-STATE

440800X1

440800

-40 Cel

MATTE TIN

QUAD

S-PQFP-G32

3

3.6 V

1.2 mm

7 mm

Not Qualified

440800 bit

3 V

IT ALSO REQUIRES 5V NOMINAL SUPPLY

e3

30

260

.00006 Amp

7 mm

3.3

EPC1441TI32

Altera

CONFIGURATION MEMORY

INDUSTRIAL

32

TQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

440800 words

3.3

3.3/5

1

FLATPACK, THIN PROFILE

TQFP32,.35SQ,32

OTP ROMs

.8 mm

85 Cel

3-STATE

440800X1

440800

-40 Cel

TIN LEAD

QUAD

S-PQFP-G32

3

3.6 V

1.2 mm

7 mm

Not Qualified

440800 bit

3 V

IT ALSO REQUIRES 5V NOMINAL SUPPLY

e0

20

235

.00006 Amp

7 mm

3.3

EPC1441TC32

Altera

CONFIGURATION MEMORY

COMMERCIAL

32

TQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

440800 words

3.3

3.3/5

1

FLATPACK, THIN PROFILE

TQFP32,.35SQ,32

OTP ROMs

.8 mm

70 Cel

3-STATE

440800X1

440800

0 Cel

TIN LEAD

QUAD

S-PQFP-G32

3

3.6 V

1.2 mm

7 mm

Not Qualified

440800 bit

3 V

IT ALSO REQUIRES 5V NOMINAL SUPPLY

e0

20

235

.00006 Amp

7 mm

3.3

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.