WDIP EPROM 2,351

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C256B-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns	12.75
M27C256B-12F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C256B-15F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.75
M27C256B-70XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.92 mm	70 ns	12.75
M27C512-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	150 ns
M27C512-15F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	150 ns
M27C512-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	90 ns
M27C512-12F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	120 ns
M27C512-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	100 ns
M27C512-15F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C1001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-12F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C1001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	150 ns
M27C256B-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns	12.75
M27C512-12F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns
M27C512-10F1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns
M27C64A-10F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns	12.5
M27C512-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	100 ns
M27C512-12F1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns
M27C4001-15F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C1001-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32		5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
M27C2001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Matte Tin (Sn)	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3	10	245	.0001 Amp	41.885 mm	100 ns
NMC27C64Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		150 ns	13
M27C512-12F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	120 ns
NMC27C64QE200	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		200 ns	13
M27C1001-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	45 ns
M27C256B-12F1L	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp		120 ns	12.75
NMC27C64Q250	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		250 ns	13
M27C512-70XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0	NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	70 ns
M27C1001-45F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	41.885 mm	45 ns
NMC27C16BQ200	National Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24		5.5 V	5.969 mm	15.24 mm	Not Qualified	16384 bit	4.5 V	TTL COMPATIBLE INPUT & OUTPUT LEVELS	e0			.0001 Amp		200 ns
CY7C245A-18WMB	Cypress Semiconductor	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE; PROGRAMMABLE ASYNCHRONOUS REGISTERS	e0			.12 Amp	31.877 mm	12 ns	12.5
M27C64A-15F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.5
M27C256B-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	36.92 mm	150 ns	12.75
AM27C256-150DI	Spansion	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						37.1475 mm	150 ns
NMC27C64Q15	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.715 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			.0001 Amp		150 ns	13
NMC27C64Q200	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		200 ns	13
NMC27C64QE150	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		150 ns	13
QD27128A-2	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0				37.15 mm	200 ns	12.5
QD27128A-20	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
CY7C261-20WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0			.04 Amp	31.877 mm	20 ns
CY7C263-20WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3	EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0			.04 Amp	31.877 mm	20 ns
M27C4001-10F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	100 ns
M27C4001-12F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
M27C4002-10F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T40		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	52.195 mm	100 ns
M27C4002-12F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T40		5.5 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3		245	.0001 Amp	52.195 mm	120 ns
M27C4002-45XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T40		5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.195 mm	45 ns
M27C4002-80XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T40		5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.195 mm	80 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.