WDIP EPROM 2,351

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C64A-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	200 ns	12.5
M27C4001-80XF1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.25 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3		245	.0001 Amp	41.885 mm	80 ns
M27C512-15F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C64A-20F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	200 ns	12.5
M27C64A-25F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	250 ns	12.5
TMS27C128-120JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		120 ns	13
WS57C256F-45T	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	37.085 mm	45 ns	12.75
WS57C256F-55D	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	37.215 mm	55 ns	12.75
WS57C256F-55T	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.0002 Amp	37.085 mm	55 ns	12.75
WS57C256F-70DMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	117 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	37.215 mm	70 ns	12.5
M27C1001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C512-70F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	70 ns
M5M27C512AK-15	Mitsubishi Electric	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.1 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.7 mm	150 ns
TD27128A-20	Intel	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
AM27C400-120DC	Advanced Micro Devices	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP40,.6	16	EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-CDIP-T40		5.5 V	5.588 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	52.2605 mm	120 ns
TS27C64A-25CQ	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		250 ns	12.5
M27C1024-10F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40		5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	52.195 mm	100 ns
M27C512-20XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0			.0001 Amp	36.92 mm	200 ns
M27C512-90F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	90 ns
M27C64A-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.5
CY7C265-15WC	Cypress Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V	PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE	e0			.12 Amp	37.0205 mm	12 ns
NM27C128Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		150 ns	12.75
NMC27C128BQ200	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.715 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0			.0001 Amp		200 ns	12.75
AT27C010-10DC	Atmel	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	1	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42.2 mm	100 ns
CY7C264-45WC	Cypress Semiconductor	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.715 mm	15.24 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e0			.03 Amp	31.877 mm	45 ns
NM27C010Q120	National Semiconductor	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T32		5.5 V	5.969 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp		120 ns
NM27C256QE120	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp		120 ns	12.75
NM27C512Q150	National Semiconductor	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.715 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp		150 ns
NMC27C32BQE200	National Semiconductor	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24		5.5 V	5.969 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS	e0			.0001 Amp		200 ns
QD2764A	Intel	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0				37.15 mm	250 ns	12.5
TMM27512AD-17	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0					170 ns
TMS27C256JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		250 ns	13
5962-8764801XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	150 ns
SMJ27C256-25J	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						36.83 mm	250 ns
SMJ27C210-12JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED			120 ns
SMJ27C010A-20J	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						41.91 mm	200 ns
TMX27C512-20JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								200 ns
5962-8764802XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		64KX8	64K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0				37.1475 mm	200 ns
TMX27C512-2JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								200 ns
SMJ27C128-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
5962-8606305XX	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0003 Amp	37.1475 mm	150 ns	12.5
5962-8961406QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
SMJ27C256-25JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	250 ns	12.5
SMJ27C210-30JM	Texas Instruments	UVPROM	MILITARY	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	125 Cel	3-STATE	64KX16	64K	-55 Cel		DUAL	R-GDIP-T40		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V						52.07 mm	300 ns
5962-8961406QXX	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	MIL-PRF-38535 Class Q	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0					120 ns
5962-8961403QXA	Texas Instruments	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel		DUAL	R-CDIP-T32		5.5 V	7.493 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
SMJ27C128-120JM	Texas Instruments	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	16KX8	16K	-55 Cel		DUAL	R-CDIP-T28		5.25 V	4.91 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0003 Amp	36.83 mm	120 ns	12.5
TMX27C512-25JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-GDIP-T28			5.84 mm	15.24 mm	Not Qualified	524288 bit								250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.