WDIP EPROM 2,351

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TMS27C210A-250JE4	Texas Instruments	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		DUAL	R-GDIP-T40	5.25 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		250 ns
TMS27LV010A-30JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3/5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	3 V					.000025 Amp		300 ns
TMS27C210A-15JE4	Texas Instruments	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	52.07 mm	150 ns
TMS27C210-25JL	Texas Instruments	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		DUAL	R-CDIP-T40	5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	52.07 mm	250 ns
TMS27C510-20JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-CDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	41.91 mm	200 ns
TMS27C512-10JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	100 ns
TMS27C210A-12JL4	Texas Instruments	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		DUAL	R-CDIP-T40	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	52.07 mm	120 ns
TMS27C010A-20JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-GDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	200 ns
TMS2764A-20JP4	Texas Instruments	UVPROM	OTHER	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	8KX8	8K	-10 Cel		DUAL	R-GDIP-T28	5.25 V	5.84 mm	15.24 mm	Not Qualified	65536 bit	4.75 V							200 ns
TMS27C512-17JL	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-CDIP-T28	5.5 V	4.907 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	170 ns
TMS27C64-15JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		DUAL	R-CDIP-T28	5.5 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	150 ns	12.5
TMS27C020-100JL	Texas Instruments	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel		DUAL	R-GDIP-T32	5.25 V	4.907 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		100 ns
TMS27C210-20JL	Texas Instruments	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel		DUAL	R-CDIP-T40	5.5 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	52.07 mm	200 ns
TMS27C210A-12JE4	Texas Instruments	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		DUAL	R-CDIP-T40	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	52.07 mm	120 ns
TMS27C128-2JL4	Texas Instruments	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel		DUAL	R-GDIP-T28	5.25 V	4.907 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		200 ns	13
TMS27C510-15JL	Texas Instruments	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel		DUAL	R-CDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	41.91 mm	150 ns
TMS27C32-15JL4	Texas Instruments	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel		DUAL	R-CDIP-T24	5.5 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	31.75 mm	150 ns
TMS27C010A-100JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-GDIP-T32	5.25 V	4.907 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		100 ns
TMS27C49-5JTL	Texas Instruments	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel		DUAL	R-CDIP-T24	5.25 V	4.907 mm	7.62 mm	Not Qualified	65536 bit	4.75 V						31.75 mm	55 ns
TMS27C010A-10JL4	Texas Instruments	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel		DUAL	R-CDIP-T32	5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	100 ns
TTV27C256N-20C-5	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V					.0001 Amp	36.92 mm	200 ns	12.75
M27W102-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3/3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	2.7 V		e3			.000015 Amp	52.195 mm	100 ns
M27V160-150XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	1048576 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	MATTE TIN	DUAL	R-CDIP-T42	3.465 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	3.135 V		e3			.00006 Amp	54.635 mm	150 ns
M87C257-90XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp		90 ns
WS57C256F-55TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0			.0005 Amp	37.085 mm	55 ns	12.5
WS57C51C-35TI	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	174 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V		e0			.035 Amp	37.085 mm	35 ns
M87C257-90F1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp		90 ns
M27128A-2F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0					200 ns	12.5
M27V402-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.195 mm	200 ns
M27V402-150F4	STMicroelectronics	UVPROM	OTHER	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0			.00002 Amp	52.195 mm	150 ns
M27W202-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX16	128K	-40 Cel		DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V						52.195 mm	100 ns
M27W202-200F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		3.3		16	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX16	128K	-40 Cel		DUAL	R-GDIP-T40	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	2.7 V						52.195 mm	100 ns
M87C257-10F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	100 ns
M27V800-100XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0			.00002 Amp	54.635 mm	100 ns
TTV27C256N-70C-19	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm		262144 bit	4.5 V					.0001 Amp	36.92 mm	70 ns	12.75
5962-8961405XX	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42.295 mm	150 ns
WS57C49C-35TI	STMicroelectronics	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V		e0			.035 Amp	32.005 mm	35 ns
M87C257-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns
M2764A-30F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0					300 ns	12.5
M87C257-90F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	90 ns
M87C257-45F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp		45 ns
TTV27C256N-70M-7	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28	5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V					.0001 Amp	36.92 mm	70 ns	12.75
M2764A-3F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0					300 ns	12.5
M27W512-100F6E	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	3.6 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	2.7 V		e3			.000015 Amp	36.92 mm	100 ns
5962-8961406XA	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				42.295 mm	120 ns
M87C257-90F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp		90 ns
M87C257-80F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	80 ns
M27W400-100XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words				8	IN-LINE, WINDOW		16		2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T40	3.78 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	2.565 V						52.195 mm	100 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.