WDIP EPROM 2,351

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C256B-25XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3	.0001 Amp	36.92 mm	150 ns	12.75
M27C1001-45F3	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e3	.0001 Amp	41.885 mm	45 ns
M27C1001-20XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	41.885 mm	120 ns
M27C256B-15XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e3	.0002 Amp	36.92 mm	150 ns	12.75
M27C512-45F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns
M27C512-45F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns
M27C2001-15F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3	.0001 Amp	41.885 mm	150 ns
M27C2001-70XF6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V	e3		41.885 mm	70 ns
M27C256B-45F3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e3	.0001 Amp	36.92 mm	45 ns	12.75
M27C512-20F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0	.0001 Amp	36.92 mm	200 ns
M27C800-120XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.25 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.75 V	e3	.00005 Amp	54.635 mm	120 ns
M27C2001-25F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V	e3	.0001 Amp	41.885 mm	250 ns
M27C1024-12XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	105 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	52.195 mm	100 ns
M27C1001-45XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e3	.0001 Amp	41.885 mm	45 ns
TMM27512AD-250	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			250 ns
TC571000D-25	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	250 ns
TC574200D-120	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	120 ns
TC571000D-20	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	200 ns
TC571001D-20	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	200 ns
TC574200D-200	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	200 ns
TC571000AD-150	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	150 ns
TMM27512AD-200	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V	e0			200 ns
TC57H1024AD-85	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	85 ns
TC571001D-25	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	250 ns
TC574000D-150	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	150 ns
TMM27256BD-15	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			150 ns	12.5
TC5716200D-150	Toshiba	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	6.05 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0		54.61 mm	150 ns
TC57H1000AD-100	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	100 ns
TMM27256BD-200	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			200 ns	12.5
TC574096D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0		52.07 mm	100 ns
TC571001D-15	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	150 ns
TC574000DI-200	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	200 ns
TC574000D-15	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	150 ns
TC57H1025AD-70	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel		64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	70 ns
TC57H1024D-85	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	85 ns
TC57H1025AD-55	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	55 ns
TC57512AD-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0		36.83 mm	150 ns
TMM27256BDI-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			150 ns	12.5
TC571001AD-150	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	150 ns
TC574096D-150	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	150 ns
TC574000D-20	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	200 ns
TC574000AD-120	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	120 ns
TC57H1024D-100	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.07 mm	100 ns
TC57H1026D-35	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	35 ns
TC571000D-15	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	150 ns
TC57H1026D-45	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	45 ns
TC574096D-120	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	120 ns
TC571024D-20	Toshiba	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	200 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.