Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Nominal Negative Supply Voltage | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Maximum Standby Current | Length | Maximum Access Time | Programming Voltage (V) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
8 |
IN-LINE |
70 Cel |
64KX8 |
64K |
0 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
70 ns |
||||||||||||||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP32,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T32 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
245 |
.0001 Amp |
41.885 mm |
100 ns |
||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP32,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T32 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
41.885 mm |
100 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T40 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
.0001 Amp |
52.195 mm |
100 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T40 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e3 |
245 |
.0001 Amp |
52.195 mm |
120 ns |
||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T40 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
e3 |
.0001 Amp |
52.195 mm |
45 ns |
|||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
70 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T40 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
e3 |
.0001 Amp |
52.195 mm |
80 ns |
|||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
70 Cel |
8KX8 |
8K |
0 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
65536 bit |
4.5 V |
90 ns |
||||||||||||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
20 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
.0001 Amp |
250 ns |
12.5 |
|||||||||||||||||
Nte Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
8KX8 |
8K |
0 Cel |
DUAL |
R-PDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
65536 bit |
4.5 V |
LG-MAX; IT ALSO OPERATES AT 6 V NOMINAL SUPPLY VOLTAGE PROGRAMMING MODE |
37.34 mm |
150 ns |
|||||||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-CDIP-T32 |
5.5 V |
5.588 mm |
15.24 mm |
1048576 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
42.1005 mm |
90 ns |
||||||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
131072 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
TIN LEAD |
DUAL |
R-CDIP-T32 |
5.5 V |
5.588 mm |
15.24 mm |
1048576 bit |
4.5 V |
e0 |
42.1005 mm |
90 ns |
||||||||||||||||||
|
Intel |
CONFIGURATION MEMORY |
COMMERCIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SERIAL |
SYNCHRONOUS |
50 mA |
1046496 words |
3.3 |
3.3/5 |
1 |
CHIP CARRIER |
LCC20,.39SQ |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
1046496X1 |
1046496 |
0 Cel |
MATTE TIN |
QUAD |
S-PQCC-J20 |
3 |
3.6 V |
4.572 mm |
8.9662 mm |
Not Qualified |
1046496 bit |
3 V |
IT ALSO REQUIRES 5V NOMINAL SUPPLY |
e3 |
30 |
245 |
.0001 Amp |
8.9662 mm |
3.3 |
||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP32,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T32 |
5.25 V |
5.72 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.75 V |
e3 |
245 |
.0001 Amp |
41.885 mm |
80 ns |
||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
DUAL |
R-GDIP-T28 |
5.5 V |
5.97 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
.0001 Amp |
36.92 mm |
150 ns |
||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.5 V |
5.97 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.0001 Amp |
36.92 mm |
200 ns |
12.5 |
||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
MATTE TIN |
DUAL |
R-CDIP-T28 |
5.5 V |
5.97 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e3 |
.0001 Amp |
36.92 mm |
250 ns |
12.5 |
||||||||
Texas Instruments |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
DUAL |
R-GDIP-T28 |
5.25 V |
4.907 mm |
15.24 mm |
Not Qualified |
131072 bit |
4.75 V |
NOT SPECIFIED |
NOT SPECIFIED |
.00025 Amp |
120 ns |
13 |
||||||||||
Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
524288 bit |
e0 |
150 ns |
||||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LDCC32,.5X.6 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
QUAD |
R-CQCC-J32 |
5.5 V |
4.06 mm |
11.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0002 Amp |
13.945 mm |
35 ns |
12.75 |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
QUAD |
R-CQCC-J32 |
5.5 V |
4.06 mm |
11.24 mm |
Not Qualified |
262144 bit |
4.5 V |
13.945 mm |
45 ns |
|||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0002 Amp |
37.085 mm |
45 ns |
12.75 |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0002 Amp |
37.215 mm |
55 ns |
12.75 |
|||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LDCC32,.5X.6 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
MATTE TIN |
QUAD |
R-CQCC-J32 |
5.5 V |
4.06 mm |
11.24 mm |
Not Qualified |
262144 bit |
4.5 V |
e3 |
.0002 Amp |
13.945 mm |
55 ns |
12.75 |
||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
32768 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
262144 bit |
4.5 V |
e0 |
.0002 Amp |
37.085 mm |
55 ns |
12.75 |
|||||||||
Spansion |
UVPROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
262144 words |
8 |
IN-LINE |
2.54 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
DUAL |
R-CDIP-T32 |
5.58 mm |
15.24 mm |
2097152 bit |
42.1 mm |
70 ns |
|||||||||||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
IN-LINE |
2.54 mm |
70 Cel |
32KX8 |
32K |
0 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
5.588 mm |
15.24 mm |
262144 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
37.1475 mm |
120 ns |
||||||||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
100 mA |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
32768 bit |
4.5 V |
e0 |
25 ns |
||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
100 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
131072 bit |
e0 |
200 ns |
12.5 |
||||||||||||||||||
Mitsubishi Electric |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
50 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.1 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.7 mm |
150 ns |
||||||||||
Advanced Micro Devices |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
32768 bit |
e0 |
300 ns |
21 |
||||||||||||||||||||
Advanced Micro Devices |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
40 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP40,.6 |
16 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-CDIP-T40 |
5.5 V |
5.588 mm |
15.24 mm |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.0001 Amp |
52.2605 mm |
120 ns |
|||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
65536 words |
5 |
8 |
IN-LINE |
70 Cel |
64KX8 |
64K |
0 Cel |
DUAL |
R-CDIP-T28 |
5.5 V |
524288 bit |
4.5 V |
NOT SPECIFIED |
NOT SPECIFIED |
150 ns |
||||||||||||||||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.71 mm |
15.24 mm |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.0001 Amp |
250 ns |
12.5 |
||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
40 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
65536 words |
COMMON |
5 |
5 |
16 |
IN-LINE, WINDOW |
DIP40,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX16 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T40 |
5.5 V |
5.97 mm |
15.24 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.0001 Amp |
52.195 mm |
100 ns |
|||||||||
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.75 V |
e0 |
.0001 Amp |
36.92 mm |
200 ns |
||||||||||
Intel |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
100 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T24 |
Not Qualified |
16384 bit |
e0 |
350 ns |
25 |
||||||||||||||||||
|
STMicroelectronics |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
30 mA |
65536 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
64KX8 |
64K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
524288 bit |
4.5 V |
e0 |
.0001 Amp |
36.92 mm |
90 ns |
|||||||||
Toshiba |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
131072 bit |
e0 |
200 ns |
12.5 |
||||||||||||||||||||
Rochester Electronics |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
IN-LINE |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
55 ns |
|||||||||||||||||||||
Atmel |
UVPROM |
COMMERCIAL |
32 |
WQCCJ |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
40 mA |
131072 words |
COMMON |
5 |
5 |
8 |
CHIP CARRIER, WINDOW |
LDCC32,.5X.6 |
EPROMs |
1.27 mm |
70 Cel |
3-STATE |
128KX8 |
128K |
0 Cel |
TIN LEAD |
QUAD |
R-CQCC-J32 |
1 |
5.5 V |
4.24 mm |
11.55 mm |
Not Qualified |
1048576 bit |
4.5 V |
e0 |
.00001 Amp |
14.1 mm |
150 ns |
|||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
90 mA |
2048 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP24,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
2KX8 |
2K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T24 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
.09 Amp |
70 ns |
13.5 |
||||||||||||
Cypress Semiconductor |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
120 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.3 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
1 |
5.5 V |
5.08 mm |
7.62 mm |
Not Qualified |
65536 bit |
4.5 V |
PROGRAMMABLE SYNCHRONOUS OR ASYNCHRONOUS OUTPUT ENABLE |
e0 |
.12 Amp |
37.0205 mm |
12 ns |
||||||||
Intel |
UVPROM |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
75 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
65536 bit |
e0 |
450 ns |
12.5 |
||||||||||||||||||
Intel |
UVPROM |
COMMERCIAL |
32 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
524288 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP32,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
512KX8 |
512K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T32 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
150 ns |
||||||||||||||||||
Intel |
UVPROM |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
50 mA |
262144 words |
COMMON |
5 |
5 |
16 |
IN-LINE |
DIP40(UNSPEC) |
EPROMs |
70 Cel |
3-STATE |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.0001 Amp |
150 ns |
|||||||||||||||||||
Fujitsu Semiconductor America |
UVPROM |
COMMERCIAL |
32 |
WQCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
1 |
NMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
8 |
CHIP CARRIER, WINDOW |
1.27 mm |
70 Cel |
3-STATE |
32KX8 |
32K |
0 Cel |
QUAD |
R-CQCC-N32 |
5.25 V |
3.3 mm |
11.43 mm |
Not Qualified |
262144 bit |
4.75 V |
13.97 mm |
250 ns |
||||||||||||||||||
National Semiconductor |
UVPROM |
COMMERCIAL |
28 |
WDIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
35 mA |
16384 words |
COMMON |
5 |
5 |
8 |
IN-LINE, WINDOW |
DIP28,.6 |
EPROMs |
2.54 mm |
70 Cel |
3-STATE |
16KX8 |
16K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-GDIP-T28 |
5.5 V |
5.72 mm |
15.24 mm |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.0001 Amp |
150 ns |
12.75 |
EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.
EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.
EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.