COMMERCIAL EPROM 1,662

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

UPD27C256AD-20

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

200 ns

12.5

UPD2732D-4

Renesas Electronics

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

4096 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

4KX8

4K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

32768 bit

e0

390 ns

25

UPD27128D-2

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

200 ns

21

UPD27C512D-20

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

524288 bit

e0

200 ns

UPD27C256AK-12

Renesas Electronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

Not Qualified

262144 bit

e0

120 ns

12.5

UPD27C256AK-15

Renesas Electronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

32768 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

QUAD

R-XQCC-N32

Not Qualified

262144 bit

e0

150 ns

12.5

UPD27HC65DX-25

Renesas Electronics

COMMERCIAL

24

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

100 mA

8192 words

COMMON

5

5

8

IN-LINE

DIP24,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T24

Not Qualified

65536 bit

e0

.025 Amp

25 ns

HN27128AG-17

Renesas Electronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

16KX8

16K

0 Cel

DUAL

R-GDIP-T28

5.25 V

5.89 mm

15.24 mm

Not Qualified

131072 bit

4.75 V

36.83 mm

170 ns

UPD27C1024AD-20

Renesas Electronics

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

50 mA

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

200 ns

UPD27C2001D-20

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

262144 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

2097152 bit

e0

.0001 Amp

200 ns

UPD2764D-4

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

400 ns

21

UPD27128D-4

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

450 ns

21

UPD27C1024D-25

Renesas Electronics

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

e0

250 ns

UPD27C256D-15

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

150 ns

21

UPD27C64D-20

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

200 ns

21

UPD27C64D-30

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

300 ns

21

HN27C512G-20

Renesas Electronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

64KX8

64K

0 Cel

DUAL

R-GDIP-T28

5.5 V

5.89 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

36.83 mm

200 ns

UPD27128D

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

16384 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

16KX8

16K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

131072 bit

e0

250 ns

21

UPD27C256D-25

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

250 ns

21

UPD27C1024AD-12

Renesas Electronics

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

50 mA

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

120 ns

UPD27C4000DZ-17

Renesas Electronics

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

50 mA

262144 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

4194304 bit

e0

.0001 Amp

170 ns

UPD27C1024AD-15

Renesas Electronics

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

50 mA

65536 words

COMMON

5

5

16

IN-LINE

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T40

Not Qualified

1048576 bit

e0

.0001 Amp

150 ns

UPD27C2001D-17

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

262144 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

2097152 bit

e0

.0001 Amp

170 ns

UPD2764D-2

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

8192 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

8KX8

8K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

65536 bit

e0

200 ns

21

UPD27256D

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

250 ns

21

UPD27C256D-20

Renesas Electronics

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

200 ns

21

UPD27C4001DZ-15

Renesas Electronics

COMMERCIAL

32

DIP

RECTANGULAR

CERAMIC

NO

CMOS

THROUGH-HOLE

30 mA

524288 words

COMMON

5

5

8

IN-LINE

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T32

Not Qualified

4194304 bit

e0

.0001 Amp

150 ns

KM4232W259A-6

Samsung

UVPROM

COMMERCIAL

120

FQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

32

FLATPACK, FINE PITCH

.5 mm

70 Cel

256KX32

256K

0 Cel

QUAD

R-PQFP-G120

5.5 V

2.3 mm

14 mm

Not Qualified

8388608 bit

4.5 V

TTL COMPATIBLE I/O

20 mm

60 ns

KM4232W259A-5

Samsung

UVPROM

COMMERCIAL

120

FQFP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

262144 words

5

32

FLATPACK, FINE PITCH

.5 mm

70 Cel

256KX32

256K

0 Cel

QUAD

R-PQFP-G120

5.5 V

2.3 mm

14 mm

Not Qualified

8388608 bit

4.5 V

TTL COMPATIBLE I/O

20 mm

50 ns

EPC1441TC32

Altera

CONFIGURATION MEMORY

COMMERCIAL

32

TQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

30 mA

440800 words

3.3

3.3/5

1

FLATPACK, THIN PROFILE

TQFP32,.35SQ,32

OTP ROMs

.8 mm

70 Cel

3-STATE

440800X1

440800

0 Cel

TIN LEAD

QUAD

S-PQFP-G32

3

3.6 V

1.2 mm

7 mm

Not Qualified

440800 bit

3 V

IT ALSO REQUIRES 5V NOMINAL SUPPLY

e0

20

235

.00006 Amp

7 mm

3.3

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.