COMMERCIAL EPROM 1,662

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TC574000D-15	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	150 ns
TMM27256AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	12.5
TMM2764AD-150	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			150 ns	12.5
TC57H1025AD-70	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel		64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	70 ns
TC57H1024D-85	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	85 ns
TC57H1025AD-55	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	55 ns
TC571001AD-150	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	150 ns
TC57400AD-150	Toshiba	UVPROM	COMMERCIAL						1	CMOS					524288 words		5		8						70 Cel		512KX8	512K				5.5 V			Not Qualified	4194304 bit	4.5 V				150 ns
TC574096D-150	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	150 ns
TC574000D-20	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	200 ns
TC574000AD-120	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	120 ns
TC57H1024D-100	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		52.07 mm	100 ns
TMM27128D-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	21
TC57H1026D-35	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	35 ns
TC571000D-15	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	150 ns
TC57H1026D-45	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	45 ns
TC574096D-120	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	256KX16	256K	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	120 ns
TMM27256BD-20	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0			200 ns	12.5
TC5716200D-200	Toshiba	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2097152 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	2MX8	2M	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	6.05 mm	15.24 mm	Not Qualified	16777216 bit	4.5 V	e0		54.61 mm	200 ns
TC578200D-150	Toshiba	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	1MX8	1M	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	6.05 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e0		54.61 mm	150 ns
TC571001AD-12	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	120 ns
TC57H10001AD-100	Toshiba	UVPROM	COMMERCIAL						1	CMOS					131072 words		5		8						70 Cel		128KX8	128K				5.5 V			Not Qualified	1048576 bit	4.5 V				100 ns
TMM27512AD-25	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.75 V	e0			250 ns
TC5710001AD-150	Toshiba	UVPROM	COMMERCIAL						1	CMOS					131072 words		5		8						70 Cel		128KX8	128K				5.5 V			Not Qualified	1048576 bit	4.5 V				150 ns
TC574000D-120	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	120 ns
TC57256AD-150	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	32KX8	32K	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		36.83 mm	150 ns
TMM27256BD-150	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0			150 ns	12.5
TC574200D-150	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T40	5.5 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		52.07 mm	150 ns
TC574000AD-150	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	e0		42 mm	150 ns
TMM2764AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	65536 bit		e0			200 ns	12.5
TC574000D-12	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0		42 mm	120 ns
TC57256AD-120	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	32KX8	32K	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	e0		36.83 mm	120 ns
TC574200D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	512KX8	512K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V	e0		52.07 mm	100 ns
TMM27128AD-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			150 ns	12.5
TMM27128AD-200	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			200 ns	12.5
TC57H1001AD-100	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	100 ns
TC57H1024D-10	Toshiba	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	64KX16	64K	TIN LEAD	DUAL	R-GDIP-T40	5.25 V	6.05 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		52.07 mm	100 ns
TC571000AD-12	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	120 ns
TC57H1000AD-85	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.25 V	6 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V	e0		42 mm	85 ns
TC578200D-200	Toshiba	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		5		8	IN-LINE, WINDOW		16		2.54 mm	70 Cel	3-STATE	1MX8	1M	TIN LEAD	DUAL	R-GDIP-T42	5.5 V	6.05 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	e0		54.61 mm	200 ns
TC5710001AD-12	Toshiba	UVPROM	COMMERCIAL						1	CMOS					131072 words		5		8						70 Cel		128KX8	128K				5.25 V			Not Qualified	1048576 bit	4.75 V				120 ns
TC57H1025D-55	Toshiba		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			60 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit		e0	.01 Amp		55 ns
TMM27256D-15	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			150 ns	21
TC571001D-200	Toshiba	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		128KX8	128K	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V	e0		42 mm	200 ns
TMM27128D-25	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	131072 bit		e0			250 ns	21
TMM27256AD-20	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	262144 bit		e0			200 ns	12.5
TC57256AD-12	Toshiba	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel	3-STATE	32KX8	32K	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V	e0		36.83 mm	120 ns
TMM27512D-25	Toshiba		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			120 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28				Not Qualified	524288 bit		e0			250 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.