COMMERCIAL EPROM 1,662

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Standby Current Length Maximum Access Time Programming Voltage (V)

M27C801-70F1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

1048576 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e3

.0001 Amp

41.885 mm

70 ns

M27C4001-12L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

13.97 mm

100 ns

M27C2001-80XF1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.25 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

4.75 V

e3

.0001 Amp

41.885 mm

80 ns

M27C512-20F1X

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

DUAL

R-GDIP-T28

5.5 V

5.97 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

NOT SPECIFIED

NOT SPECIFIED

.0001 Amp

36.92 mm

150 ns

M27C4001-80XL1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.25 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.75 V

e0

.0001 Amp

13.97 mm

80 ns

M27C4001-70XF1

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.25 V

5.72 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

e3

.0001 Amp

41.885 mm

70 ns

M27C160-50XF1

STMicroelectronics

UVPROM

COMMERCIAL

42

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

1048576 words

COMMON

5

5

16

IN-LINE

DIP42,.6

8

EPROMs

2.54 mm

70 Cel

3-STATE

1MX16

1M

0 Cel

MATTE TIN

DUAL

R-CDIP-T42

5.25 V

5.71 mm

15.24 mm

Not Qualified

16777216 bit

4.75 V

e3

.0001 Amp

54.635 mm

50 ns

M27C801-100F1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1048576 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

1MX8

1M

0 Cel

TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

8388608 bit

4.5 V

e3

41.885 mm

100 ns

M27C322-100F1

STMicroelectronics

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

2097152 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP42,.6

EPROMs

2.54 mm

70 Cel

3-STATE

2MX16

2M

0 Cel

MATTE TIN

DUAL

R-CDIP-T42

5.5 V

5.71 mm

15.24 mm

Not Qualified

33554432 bit

4.5 V

e3

.0001 Amp

54.635 mm

100 ns

M27C4001-15XL1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.25 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.75 V

e0

.0001 Amp

13.97 mm

100 ns

M27C4001-12F1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e3

.0001 Amp

41.885 mm

100 ns

M27C256B-20XF1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

MATTE TIN

DUAL

R-CDIP-T28

5.25 V

5.72 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e3

.0002 Amp

36.92 mm

150 ns

12.75

M27C4001-70L1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

13.97 mm

70 ns

M27C4002-20XF1TR

STMicroelectronics

UVPROM

COMMERCIAL

40

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE

2.54 mm

70 Cel

256KX16

256K

0 Cel

DUAL

R-CDIP-T40

5.5 V

5.72 mm

13.2 mm

Not Qualified

4194304 bit

4.5 V

52.195 mm

200 ns

M27C4001-35F1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e3

.0001 Amp

41.885 mm

35 ns

M27C516-20XF1

STMicroelectronics

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

32768 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX16

32K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

5.71 mm

15.24 mm

Not Qualified

524288 bit

4.75 V

e0

.0002 Amp

200 ns

M27C4002-80J1X

STMicroelectronics

UVPROM

COMMERCIAL

44

QCCJ

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

16

CHIP CARRIER

LDCC44,.7SQ

EPROMs

1.27 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

MATTE TIN

QUAD

S-CQCC-J44

5.5 V

4.83 mm

16.51 mm

Not Qualified

4194304 bit

4.5 V

e3

.0001 Amp

16.51 mm

80 ns

M27C400-70F1

STMicroelectronics

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

262144 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP40,.6

8

EPROMs

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

5.97 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

.0001 Amp

52.195 mm

70 ns

M27C2001-25L1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.5 V

2.28 mm

11.43 mm

Not Qualified

2097152 bit

4.5 V

e0

.0001 Amp

13.97 mm

150 ns

M27C2001-55XF1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.25 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

4.75 V

e3

.0001 Amp

41.885 mm

55 ns

M27C2001-80L1XTR

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

2097152 bit

e0

.0001 Amp

80 ns

M27C4001-70L1XTR

STMicroelectronics

COMMERCIAL

32

QCCN

RECTANGULAR

CERAMIC

YES

CMOS

NO LEAD

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

Tin/Lead (Sn/Pb)

QUAD

R-XQCC-N32

4194304 bit

e0

.0001 Amp

70 ns

M27C512-45F1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN

DUAL

R-GDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e3

.0001 Amp

36.92 mm

45 ns

M27C2001-15XL1

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

GOLD

QUAD

R-CQCC-N32

5.25 V

2.28 mm

11.43 mm

Not Qualified

2097152 bit

4.75 V

e4

.0001 Amp

13.97 mm

150 ns

M27C2001-15F1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

MATTE TIN

DUAL

R-GDIP-T32

5.5 V

5.97 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e3

.0001 Amp

41.885 mm

150 ns

M27C512-20F1

STMicroelectronics

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

30 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.72 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e0

.0001 Amp

36.92 mm

200 ns

M27C800-120XF1

STMicroelectronics

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

70 mA

524288 words

COMMON

5

5

16

IN-LINE, WINDOW

DIP42,.6

8

EPROMs

2.54 mm

70 Cel

3-STATE

512KX16

512K

0 Cel

MATTE TIN

DUAL

R-GDIP-T42

5.25 V

5.97 mm

15.24 mm

Not Qualified

8388608 bit

4.75 V

e3

.00005 Amp

54.635 mm

120 ns

M27C2001-25F1

STMicroelectronics

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

35 mA

262144 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP32,.6

EPROMs

2.54 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

MATTE TIN

DUAL

R-CDIP-T32

5.5 V

5.72 mm

15.24 mm

Not Qualified

2097152 bit

4.5 V

e3

.0001 Amp

41.885 mm

250 ns

M27C2001-20XL1X

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

262144 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

256KX8

256K

0 Cel

GOLD

QUAD

R-CQCC-N32

5.25 V

2.28 mm

11.43 mm

Not Qualified

2097152 bit

4.75 V

e4

.0001 Amp

13.97 mm

150 ns

M27C4001-10XL1TR

STMicroelectronics

UVPROM

COMMERCIAL

32

WQCCN

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

30 mA

524288 words

COMMON

5

5

8

CHIP CARRIER, WINDOW

LCC32,.45X.55

EPROMs

1.27 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

QUAD

R-CQCC-N32

5.25 V

2.8 mm

11.43 mm

Not Qualified

4194304 bit

4.75 V

e0

.0001 Amp

13.97 mm

100 ns

TMM27512AD-250

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e0

250 ns

TC574200D-120

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

52.07 mm

120 ns

TC57H10001AD-85

Toshiba

UVPROM

COMMERCIAL

1

CMOS

131072 words

5

8

70 Cel

128KX8

128K

0 Cel

5.25 V

Not Qualified

1048576 bit

4.75 V

85 ns

TMM27256D-20

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

200 ns

21

TC574200D-200

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.5 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

52.07 mm

200 ns

TC571000AD-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

150 ns

TC57H0124AD-100

Toshiba

UVPROM

COMMERCIAL

1

CMOS

65536 words

5

16

70 Cel

64KX16

64K

0 Cel

5.5 V

Not Qualified

1048576 bit

4.5 V

100 ns

TMM27256AD-15

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

100 mA

32768 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

262144 bit

e0

150 ns

12.5

TMM27512AD-200

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

130 mA

65536 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

524288 bit

4.5 V

e0

200 ns

TC57H1024AD-85

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

65536 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

64KX16

64K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

52.07 mm

85 ns

TMM27512D-200

Toshiba

COMMERCIAL

28

DIP

RECTANGULAR

CERAMIC

NO

MOS

THROUGH-HOLE

130 mA

65536 words

COMMON

5

5

8

IN-LINE

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

64KX8

64K

0 Cel

Tin/Lead (Sn/Pb)

DUAL

R-XDIP-T28

Not Qualified

524288 bit

e0

200 ns

TC574000D-150

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

524288 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

512KX8

512K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

4194304 bit

4.5 V

e0

42 mm

150 ns

TMM27256BD-15

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.25 V

5.2 mm

15.24 mm

Not Qualified

262144 bit

4.75 V

e0

150 ns

12.5

TC5716200D-150

Toshiba

UVPROM

COMMERCIAL

42

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2097152 words

5

8

IN-LINE, WINDOW

16

2.54 mm

70 Cel

3-STATE

2MX8

2M

0 Cel

TIN LEAD

DUAL

R-GDIP-T42

5.5 V

6.05 mm

15.24 mm

Not Qualified

16777216 bit

4.5 V

e0

54.61 mm

150 ns

TC57H1000AD-100

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.5 V

6 mm

15.24 mm

Not Qualified

1048576 bit

4.5 V

e0

42 mm

100 ns

TMM27256BD-200

Toshiba

UVPROM

COMMERCIAL

28

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

NMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

32768 words

COMMON

5

5

8

IN-LINE, WINDOW

DIP28,.6

EPROMs

2.54 mm

70 Cel

3-STATE

32KX8

32K

0 Cel

TIN LEAD

DUAL

R-GDIP-T28

5.5 V

5.2 mm

15.24 mm

Not Qualified

262144 bit

4.5 V

e0

200 ns

12.5

TC574096D-10

Toshiba

UVPROM

COMMERCIAL

40

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

262144 words

5

16

IN-LINE, WINDOW

2.54 mm

70 Cel

3-STATE

256KX16

256K

0 Cel

TIN LEAD

DUAL

R-GDIP-T40

5.25 V

6.05 mm

15.24 mm

Not Qualified

4194304 bit

4.75 V

e0

52.07 mm

100 ns

TC571001D-15

Toshiba

UVPROM

COMMERCIAL

32

WDIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

131072 words

5

8

IN-LINE, WINDOW

2.54 mm

70 Cel

128KX8

128K

0 Cel

TIN LEAD

DUAL

R-GDIP-T32

5.25 V

6.1 mm

15.24 mm

Not Qualified

1048576 bit

4.75 V

e0

42 mm

150 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.