INDUSTRIAL EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C512-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	150 ns
EPC2TI32N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	7 mm		3.3
M27C512-90F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	90 ns
EPC2LI20N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	CHIP CARRIER	LCC20,.39SQ	Flash Memories	1.27 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	8.9662 mm		3.3
M27C512-15F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C256B-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	120 ns	12.75
EPC1PI8N	Intel	CONFIGURATION MEMORY	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	DUAL	R-PDIP-T8	1	3.6 V	4.318 mm	7.62 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3			.0001 Amp	9.398 mm		3.3
EPC2TI32	Intel	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	50 mA	1695680 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	Flash Memories	.8 mm	85 Cel	3-STATE	1695680X1	1695680	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	1695680 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0			.0001 Amp	7 mm		3.3
NMC27C64QE200	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		200 ns	13
M27C256B-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0002 Amp	36.92 mm	150 ns	12.75
AM27C256-120DI	Rochester Electronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE			2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm		262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		37.1475 mm	120 ns
AM27C256-150DI	Spansion	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.588 mm	15.24 mm	Not Qualified	262144 bit	4.5 V						37.1475 mm	150 ns
NMC27C64QE150	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0			.0001 Amp		150 ns	13
M27C64A-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	200 ns	12.5
LD27128A2	Intel	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			100 mA	16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28						131072 bit			e0					200 ns	12.5
M27C1001-12F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	120 ns
M27C512-70F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	70 ns
TD27128A-20	Intel	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0				37.15 mm	200 ns	12.5
M27C64A-15F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V	5.97 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e3			.0001 Amp	36.92 mm	150 ns	12.5
CY27C256-150WI	Cypress Semiconductor	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE				85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V			Not Qualified	262144 bit	4.5 V							150 ns
NM27C256QE120	National Semiconductor	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	40 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp		120 ns	12.75
NMC27C32BQE200	National Semiconductor	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-GDIP-T24		5.5 V	5.969 mm	15.24 mm	Not Qualified	32768 bit	4.5 V	TTL/CMOS COMPATIBLE INPUT & OUTPUT LEVELS	e0			.0001 Amp		200 ns
27C256-10I/P	Microchip Technology	EPROM	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	OTP ROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.83 mm	15.24 mm	Not Qualified	262144 bit	4.5 V	DATA RETENTION >200 YEARS	e0			.0001 Amp	36.32 mm	100 ns	5
5962-01-357-9827	Texas Instruments		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit				NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		250 ns	13
TMS87C257-2JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		200 ns
TMS87C257JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		250 ns
TMS87C257-1JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		170 ns
TMS87C257-150JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		150 ns
TMS27C020-120JE4	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL	R-GDIP-T32		5.25 V	4.907 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
TMS27C010A-12JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	120 ns
TMS27C040-120JE4	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL	R-GDIP-T32		5.25 V	4.907 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
TMS27C040-10JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	100 ns
TMS27C128-100JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		100 ns	13
TMS27C32-10JE4	Texas Instruments	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel		DUAL	R-CDIP-T24		5.5 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	31.75 mm	100 ns
TMS27C128-100JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	131072 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		100 ns	13
TMS27C010A-20JE4	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel		DUAL	R-CDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	200 ns
TMS27C256-2JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	262144 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		200 ns	13
TMS27C256-17JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	170 ns	13
TMS27C256-12JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	4.91 mm	15.24 mm	Not Qualified	262144 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	120 ns	13
TMS27C32-120JE4	Texas Instruments	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel		DUAL	R-CDIP-T24		5.25 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	31.75 mm	120 ns
TMS27C020-20JE	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL	R-GDIP-T32		5.5 V	4.91 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	41.91 mm	200 ns
TMS27C32-20JE4	Texas Instruments	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6	EPROMs	2.54 mm	85 Cel	3-STATE	4KX8	4K	-40 Cel		DUAL	R-CDIP-T24		5.5 V	4.907 mm	15.24 mm	Not Qualified	32768 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	31.75 mm	200 ns
TMS27C020-200JE4	Texas Instruments	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel		DUAL	R-GDIP-T32		5.25 V	4.907 mm	15.24 mm	Not Qualified	2097152 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		200 ns
TMS27C210A-20JE4	Texas Instruments	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel		DUAL	R-CDIP-T40		5.5 V	4.91 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	52.07 mm	200 ns
TMS27C64-100JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel		DUAL	R-CDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	65536 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	100 ns	12.5
TMS27C240-120JE	Texas Instruments	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6	EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel		DUAL	R-GDIP-T40		5.25 V	4.907 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp		120 ns
TMS27C512-30JE	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	4.907 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp	36.83 mm	300 ns
TMS27C512-150JE4	Texas Instruments	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	4.907 mm	15.24 mm	Not Qualified	524288 bit	4.75 V			NOT SPECIFIED	NOT SPECIFIED	.00025 Amp		150 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.