INDUSTRIAL EPROM 1,425

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TC571000D-20	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42 mm	200 ns
TC571001D-20	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42 mm	200 ns
TC571001D-25	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel		128KX8	128K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.25 V	6.1 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				42 mm	250 ns
TMM27128DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	21
TMM2764DI	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					250 ns	21
TC574000DI-200	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42 mm	200 ns
TC57512AD-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	6 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0				36.83 mm	150 ns
TMM27256BDI-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0					150 ns	12.5
TMM27128ADI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					150 ns	12.5
TC571024D-20	Toshiba	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40		5.25 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e0				52.07 mm	200 ns
TMM27256DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0					150 ns	21
TMM27256DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			120 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0					200 ns	21
T4773	Toshiba	UVPROM	INDUSTRIAL	32	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER, WINDOW				85 Cel		32KX8	32K	-40 Cel	TIN LEAD	QUAD	S-CQCC-N32		5.5 V			Not Qualified	262144 bit	4.5 V		e0					200 ns
TMM27512ADI-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0					200 ns
TMM2764DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					150 ns	21
TMM27128ADI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					200 ns	12.5
TMM27512DI-25	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					250 ns
TC57512AD-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	6 mm	15.24 mm	Not Qualified	524288 bit	4.75 V		e0				36.83 mm	200 ns
TC57256AD-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0				36.83 mm	200 ns
TMM2764DI-2	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				8192 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0					200 ns	21
TC57256AD-15	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	6 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0				36.83 mm	150 ns
TC574000DI-150	Toshiba	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		5		8	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	6 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0				42 mm	150 ns
TMM27256BDI-20	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.2 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0					200 ns	12.5
TMM27128DI-15	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE				16384 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	131072 bit			e0					150 ns	21
TMM27512ADI-25	Toshiba	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	130 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.2 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0					250 ns
TMM27512DI-20	Toshiba		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		MOS	THROUGH-HOLE			130 mA	65536 words	COMMON	5	5	8	IN-LINE	DIP28,.6	EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	524288 bit			e0					200 ns
TC571024D-200	Toshiba	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		16	IN-LINE, WINDOW			2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40		5.5 V	5.94 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0				52.07 mm	200 ns
AM27C020-55DC500	Samsung	UVPROM	INDUSTRIAL	52	VFLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	PARALLEL	ASYNCHRONOUS		536870912 words		3.3		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				85 Cel		512MX8	512M	-40 Cel		BOTTOM	R-PBGA-B52		3.6 V	.65 mm	12 mm		4294967296 bit	2.7 V						17 mm	25 ns
EPC1441LI20N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.00006 Amp	8.9662 mm		3.3
EPC1441TI32N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	260	.00006 Amp	7 mm		3.3
EPC1441TI32	Altera	CONFIGURATION MEMORY	INDUSTRIAL	32	TQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	SERIAL	SYNCHRONOUS	30 mA	440800 words		3.3	3.3/5	1	FLATPACK, THIN PROFILE	TQFP32,.35SQ,32	OTP ROMs	.8 mm	85 Cel	3-STATE	440800X1	440800	-40 Cel	TIN LEAD	QUAD	S-PQFP-G32	3	3.6 V	1.2 mm	7 mm	Not Qualified	440800 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	20	235	.00006 Amp	7 mm		3.3
EPC1LI20N	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	3.3/5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	MATTE TIN	QUAD	S-PQCC-J20	3	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e3	30	245	.0001 Amp	8.9662 mm		3.3
EPC1LI20	Altera	CONFIGURATION MEMORY	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	SERIAL	SYNCHRONOUS	50 mA	1046496 words		3.3	5	1	CHIP CARRIER	LDCC20,.4SQ	OTP ROMs	1.27 mm	85 Cel	3-STATE	1046496X1	1046496	-40 Cel	TIN LEAD	QUAD	S-PQCC-J20	1	3.6 V	4.572 mm	8.9662 mm	Not Qualified	1046496 bit	3 V	IT ALSO REQUIRES 5V NOMINAL SUPPLY	e0	20	220	.0001 Amp	8.9662 mm		3.3

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.