STMicroelectronics EPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
WS57C49C-55D	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	95 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.03 Amp	32.135 mm	55 ns
M27V102-120F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	120 ns
M27V800-150XF1	STMicroelectronics	UVPROM	COMMERCIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	70 Cel	3-STATE	512KX16	512K	0 Cel	TIN LEAD	DUAL	R-GDIP-T42	3.465 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3.135 V	CONFIGURABLE AS 512K X 16	e0	.00002 Amp	54.635 mm	150 ns
M87C257-15XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	150 ns
M27256-4F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			450 ns	12.5
M27V201-150F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	262144 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	3 V		e3	.00002 Amp	41.885 mm	150 ns
5962-9065801JA	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	32768 bit	4.5 V		e0	.035 Amp		70 ns
TTV27C256N-90C-18	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
M27W800-100F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		16	IN-LINE, WINDOW		8		2.54 mm	85 Cel		512KX16	512K	-40 Cel		DUAL	R-GDIP-T42	3.6 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V				54.635 mm	100 ns
M27256F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			250 ns	12.5
M87C257-45F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28			15.24 mm	Not Qualified	262144 bit		LG-MAX	e3	.0001 Amp	38.1 mm	45 ns
M27V402-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V					200 ns
M27V101-100L1TR	STMicroelectronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD			30 mA	131072 words	COMMON	3.3	3.3	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32				Not Qualified	1048576 bit			e0	.00002 Amp		100 ns
M2764A-2F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			200 ns	12.5
M2764A-1F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0			180 ns	12.5
WS57C51C-45T	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	139 mA	16384 words		5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.08 mm	7.62 mm	Not Qualified	131072 bit	4.5 V		e0	.03 Amp	37.085 mm	45 ns
TTV27C256N-12C-23	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.26 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
5962-87515043X	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words		5		8	CHIP CARRIER					125 Cel		8KX8	8K	-55 Cel	TIN LEAD	QUAD	S-CQCC-N28	5.5 V			Not Qualified	65536 bit	4.5 V		e0			90 ns
5962-8765004LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	32.005 mm	45 ns	13.5
M27V402-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW				2.54 mm	85 Cel		256KX16	256K	-40 Cel		DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V					150 ns
M27V801-180F6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	1048576 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.63 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	2.97 V		e0	.00002 Amp	41.885 mm	180 ns
M27256-4F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			450 ns	12.5
TS27C64A-25XCQ	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.75 V		e0	.0001 Amp		250 ns	12.5
5962-8752902LX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS		2048 words		5		8	IN-LINE					125 Cel		2KX8	2K	-55 Cel		DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V
M27512-25F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			250 ns
M27V101-100F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	131072 words	COMMON	3.3	3.3	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	3 V		e0	.00002 Amp	41.885 mm	100 ns
5962-87650043X	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	125 Cel		2KX8	2K	-55 Cel		QUAD	S-CQCC-N28	5.5 V	3.3 mm	11.455 mm	Not Qualified	16384 bit	4.5 V				11.455 mm	45 ns
5962-8961406MYC	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER					125 Cel		128KX8	128K	-55 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V			Not Qualified	1048576 bit	4.5 V		e4			120 ns
M27128A-4F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	75 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	16KX8	16K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	131072 bit	4.75 V		e0			450 ns	12.5
5962-8606310UX	STMicroelectronics	UVPROM	MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		5		8	IN-LINE					125 Cel		32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V			Not Qualified	262144 bit	4.5 V		e0			45 ns
5962-87650023C	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ		EPROMs	1.27 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V			Not Qualified	16384 bit	4.5 V		e4	.12 Amp		55 ns	13.5
5962-8961405MXA	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32	5.5 V	5.588 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		42.1005 mm	150 ns
M27W400-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	524288 words	COMMON		3/3.3	8	IN-LINE, WINDOW	DIP40,.6	16	EPROMs	2.54 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.96 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	2.43 V		e0	.000015 Amp	52.195 mm	120 ns
M87C257-12F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp	36.92 mm	120 ns
M27V402-150F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T40	3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V		e0	.00002 Amp	52.195 mm	150 ns
WS57C291C-35TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	3-STATE	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.025 Amp	32.005 mm	35 ns	12.75
WS57C43C-55TMB	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	3-STATE	4KX8	4K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.08 mm	7.62 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.005 mm	55 ns
5962-8765001JX	STMicroelectronics	UVPROM	MILITARY	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words		5		8	IN-LINE					125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V			Not Qualified	16384 bit	4.5 V		e0			50 ns
5962-87515073C	STMicroelectronics	UVPROM	MILITARY	28	WQCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC28,.45SQ		EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28	5.5 V	2.8956 mm	11.43 mm	Not Qualified	65536 bit	4.5 V	POWER SWITCHED PROM	e4	.04 Amp	11.43 mm	35 ns
5962-8961403YC	STMicroelectronics	UVPROM	MILITARY		WQCCN		CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		131072 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	QUAD		5.5 V	3.556 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0		13.97 mm	200 ns
WS57C191C-45DI	STMicroelectronics	UVPROM	INDUSTRIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	85 Cel	3-STATE	2KX8	2K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	16384 bit	4.5 V		e0	.025 Amp	32.135 mm	45 ns	12.75
WS57C128FB-55D	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	16384 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	16KX8	16K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	131072 bit	4.5 V		e0	.0005 Amp	37.215 mm	55 ns	12.75
5962-8606305YC	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	Gold (Au)	QUAD	R-CQCC-N32	5.5 V	3.556 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e4	.0003 Amp	13.97 mm	150 ns	12.5
TTV27C256N-12C-15	STMicroelectronics	UVPROM	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel		DUAL	R-CDIP-T28	5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	120 ns	12.75
M87C257-80XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		80 ns
5962-8751502JA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.6		EPROMs	2.54 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24	5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0		32.135 mm	55 ns
M87C257-70XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		70 ns
M27V401-180F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	IN-LINE				2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T32	3.6 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	3 V				41.885 mm	180 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.