STMicroelectronics EPROM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
TS27C256-30CQ	STMicroelectronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE				32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e0			300 ns	12.5
M87C257-10F7	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-XDIP-T28					Not Qualified	262144 bit			e3	.0001 Amp		100 ns
5962-8765004KC	STMicroelectronics	UVPROM	MILITARY	24	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	1	CMOS	MIL-STD-883	FLAT	PARALLEL	ASYNCHRONOUS		2048 words		5		8	FLATPACK					125 Cel		2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDFP-F24		5.5 V			Not Qualified	16384 bit	4.5 V		e0			45 ns
M27V801-150F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		1MX8	1M	-40 Cel		DUAL	R-GDIP-T32		3.6 V	5.72 mm	15.24 mm	Not Qualified	8388608 bit	3 V				41.885 mm	150 ns
M2716F1	STMicroelectronics	UVPROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.25 V	5.715 mm	15.24 mm	Not Qualified	16384 bit	4.75 V	25V PROGRAMMING VOLTAGE	e0		31.75 mm	450 ns	25
ETC2716Q-E	STMicroelectronics		OTHER	24	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			10 mA	2048 words	COMMON	5	5	8	IN-LINE	DIP24,.6		EPROMs	2.54 mm	70 Cel	3-STATE	2KX8	2K	-25 Cel		DUAL	R-XDIP-T24					Not Qualified	16384 bit				.0001 Amp		450 ns
M87C257-15XF7X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		150 ns
TTV27C256N-90C-20	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	90 ns	12.75
TTV27C256N-70C-22	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit				.0001 Amp		70 ns	12.75
WS57C45-25T	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	SYNCHRONOUS	105 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	70 Cel	REGISTERED	2KX8	2K	0 Cel	MATTE TIN	DUAL	R-GDIP-T24	1	5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e3	.02 Amp	32.005 mm	12 ns	13.5
M27V102-90F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40		3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	90 ns
M27V402-150F1TR	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words		3.3		16	IN-LINE, WINDOW				2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-GDIP-T40		3.63 V	5.72 mm	15.24 mm	Not Qualified	4194304 bit	2.97 V					150 ns
M27W256-120F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-PDIP-T28		3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V				36.92 mm	120 ns
WS57C256F-70D	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e0	.0002 Amp	37.215 mm	70 ns	12.75
WS57C43C-70D	STMicroelectronics	UVPROM	COMMERCIAL	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	4096 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	70 Cel	3-STATE	4KX8	4K	0 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	32768 bit	4.5 V		e0	.03 Amp	32.135 mm	70 ns
M27V101-200L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	3.3	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32		3.63 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	13.97 mm	200 ns
M27W256-120F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	32768 words	COMMON	3	3/3.3	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-CDIP-T28		3.6 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	2.7 V		e0	.000015 Amp	36.92 mm	100 ns	12.75
M27W400-120XF6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		524288 words				8	IN-LINE, WINDOW		16		2.54 mm	85 Cel		512KX8	512K	-40 Cel		DUAL	R-GDIP-T40		3.78 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	2.565 V				52.195 mm	120 ns
TS27C64A-25VQ	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	8192 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	8KX8	8K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	65536 bit	4.5 V		e0	.0001 Amp		250 ns	12.5
M27V256-200F6TR	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	IN-LINE, WINDOW				2.54 mm	85 Cel		32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		3.6 V	5.72 mm	16 mm	Not Qualified	262144 bit	3 V				36.5 mm	200 ns
5962-8606310YX	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	NO LEAD			130 mA	32768 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel		QUAD	R-XQCC-N32					Not Qualified	262144 bit				.045 Amp		45 ns	12.5
M87C257-12XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		120 ns
M87C257-70XF6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp	36.92 mm	70 ns
TTV27C256N-12M-11	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-GDIP-T28		5.25 V	5.72 mm	15.24 mm		262144 bit	4.75 V			.0001 Amp	36.92 mm	120 ns	12.75
M27V401-180L1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel		QUAD	R-CQCC-N32		5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V				13.97 mm	180 ns
5962-8961406MXA	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		131072 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.588 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0		42.1005 mm	120 ns
M87C257-15XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		150 ns
WS57C71C-55CMB	STMicroelectronics	UVPROM	MILITARY	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS	133 mA	32768 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0	.025 Amp	13.97 mm	55 ns
TTV27C256N-12C-25	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-XDIP-T28					Not Qualified	262144 bit				.0001 Amp		120 ns	12.75
M27256-2F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e0			200 ns	12.5
5962-8751501LX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	65536 bit	4.5 V				32.005 mm	45 ns
M27V102-100F1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	15 mA	65536 words	COMMON	3.3	3.3	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T40		3.63 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	2.97 V		e0	.00002 Amp	52.195 mm	100 ns
M27V201-150L1	STMicroelectronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS		NO LEAD			30 mA	262144 words	COMMON		3.3/5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					Not Qualified	2097152 bit			e0	.00002 Amp		150 ns
5962-8606309YA	STMicroelectronics	UVPROM	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words		5		8	CHIP CARRIER					125 Cel		32KX8	32K	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V			Not Qualified	262144 bit	4.5 V		e0			55 ns
M27W402-150F4	STMicroelectronics		COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS		THROUGH-HOLE			50 mA	262144 words	COMMON		3/5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-XDIP-T40					Not Qualified	4194304 bit			e0	.00002 Amp		150 ns
M27512-20F1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	NMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	125 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			200 ns
M87C257-60XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.25 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3	.0001 Amp		60 ns
M27V401-120L1	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	13.97 mm	120 ns
WS27C010L-12DMB	STMicroelectronics	UVPROM	MILITARY	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T32		5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e0	.0001 Amp	42.295 mm	120 ns
M87C257-80F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.71 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3	.0001 Amp		80 ns
M27V401-120L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		524288 words		5		8	CHIP CARRIER, WINDOW				1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel		QUAD	R-CQCC-N32		5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V				13.97 mm	120 ns
M27V401-180L6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	3.3/5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	2.28 mm	11.43 mm	Not Qualified	4194304 bit	3 V		e0	.00002 Amp	13.97 mm	180 ns
TTV27C256N-20C-6	STMicroelectronics	UVPROM	AUTOMOTIVE	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	200 ns	12.75
TTV27C256N-12C-20	STMicroelectronics	UVPROM	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5		8	IN-LINE, WINDOW	DIP28,.6			2.54 mm	85 Cel	3-STATE	32KX8	32K	-40 Cel		DUAL	R-CDIP-T28		5.5 V	5.72 mm	15.26 mm		262144 bit	4.5 V			.0001 Amp	36.92 mm	120 ns	12.75
5962-87515043C	STMicroelectronics	UVPROM	MILITARY	28	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	38535Q/M;38534H;883B	NO LEAD	PARALLEL	ASYNCHRONOUS		8192 words	COMMON	5	5	8	CHIP CARRIER	LCC28,.45SQ		EPROMs	1.27 mm	125 Cel	3-STATE	8KX8	8K	-55 Cel	Gold (Au)	QUAD	S-CQCC-N28		5.5 V			Not Qualified	65536 bit	4.5 V		e4			90 ns
5962-8751503JX	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words		5		8	IN-LINE, WINDOW				2.54 mm	125 Cel		8KX8	8K	-55 Cel		DUAL	R-GDIP-T24		5.5 V	5.72 mm	15.24 mm	Not Qualified	65536 bit	4.5 V				32.135 mm	70 ns
WS57C71C-70TMB	STMicroelectronics	UVPROM	MILITARY	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	117 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.3		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm	7.62 mm	Not Qualified	262144 bit	4.5 V		e0	.025 Amp	37.085 mm	70 ns
5962-8752902LA	STMicroelectronics	UVPROM	MILITARY	24	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	38535Q/M;38534H;883B	THROUGH-HOLE	PARALLEL	SYNCHRONOUS	120 mA	2048 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP24,.3		EPROMs	2.54 mm	125 Cel	REGISTERED	2KX8	2K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T24		5.5 V	5.08 mm	7.62 mm	Not Qualified	16384 bit	4.5 V		e0	.12 Amp	31.877 mm	35 ns	13.5

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.