EPROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)
M27C1024-12XF1	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX16	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	52.195 mm	100 ns
M27C4001-35L1XTR	STMicroelectronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					4194304 bit			e0			.0001 Amp		35 ns
M27C256B-10XF1X	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.25 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.92 mm	100 ns	12.75
M27C512F	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		65536 words		5		8	IN-LINE, WINDOW				2.54 mm	70 Cel		64KX8	64K	0 Cel	TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3				36.92 mm	100 ns
M27C4002-90XJ6TR	STMicroelectronics	UVPROM	INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.25 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	16.51 mm	90 ns
M27C512-10F6	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel	TIN LEAD	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e0			.0001 Amp	36.92 mm	100 ns
M27C1001-15L6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e4			.0001 Amp	13.97 mm	120 ns
M27C2001-80XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V		e0			.0001 Amp	13.97 mm	80 ns
M27C1001-70XF6	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.25 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	70 ns
M27C2001-12XL1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V		e0			.0001 Amp	13.97 mm	120 ns
M27C4001-10F1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	41.885 mm	100 ns
M27C1001-10XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	100 ns
M27C1001-60XL1	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V		e4			.0001 Amp	13.97 mm	60 ns
M27C2001-80XL1TR	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V		e0			.0001 Amp	13.97 mm	80 ns
M27C2001-55XL1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V		e4			.0001 Amp	13.97 mm	55 ns
M27C2001-25L1	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e4			.0001 Amp	13.97 mm	150 ns
M27C2001-15XL1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	GOLD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.75 V		e4			.0001 Amp	13.97 mm	150 ns
M27C4001-70L1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	13.97 mm	70 ns
M27C4001-35L1X	STMicroelectronics	UVPROM	COMMERCIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	13.97 mm	35 ns
M27C2001-55L6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	GOLD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e4			.0001 Amp	13.97 mm	55 ns
M27C1024-25XF3	STMicroelectronics		AUTOMOTIVE	40	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			35 mA	65536 words	COMMON	5	5	16	IN-LINE	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX16	64K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-XDIP-T40				Not Qualified	1048576 bit			e0			.0001 Amp		200 ns
M27C256B-10F7	STMicroelectronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE			30 mA	32768 words	COMMON	5	5	8	IN-LINE	DIP28,.6		EPROMs	2.54 mm	105 Cel	3-STATE	32KX8	32K	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				Not Qualified	262144 bit			e0			.0001 Amp		100 ns	12.75
M27C2001-15XL1XTR	STMicroelectronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					2097152 bit			e0			.0001 Amp		150 ns
M27C1001-60L6XTR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					1048576 bit			e0			.0001 Amp		60 ns
M27C4002-45J1XTR	STMicroelectronics		COMMERCIAL	44	QCCJ	SQUARE	CERAMIC	YES		CMOS	J BEND			70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	Matte Tin (Sn)	QUAD	S-XQCC-J44					4194304 bit			e3			.0001 Amp		45 ns
M27C160-120XF6	STMicroelectronics	UVPROM	INDUSTRIAL	42	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	1048576 words	COMMON	5	5	16	IN-LINE	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	MATTE TIN	DUAL	R-CDIP-T42	5.25 V	5.71 mm	15.24 mm	Not Qualified	16777216 bit	4.75 V	CONFIGURABLE AS 1M X 16	e3			.0001 Amp	54.635 mm	120 ns
M27C1001-25XL6XTR	STMicroelectronics		INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					1048576 bit			e0			.0001 Amp		120 ns
M27C4002-80XF1X	STMicroelectronics	UVPROM	COMMERCIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.195 mm	80 ns
M27C512-15F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	150 ns
M27C2001-25L1XTR	STMicroelectronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES		CMOS	NO LEAD			30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER	LCC32,.45X.55		EPROMs	1.27 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	Tin/Lead (Sn/Pb)	QUAD	R-XQCC-N32					2097152 bit			e0			.0001 Amp		150 ns
M27C256B-25XF1	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0002 Amp	36.92 mm	150 ns	12.75
M27C4002-15J6XTR	STMicroelectronics		INDUSTRIAL	44	QCCJ	SQUARE	CERAMIC	YES		CMOS	J BEND			70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	Matte Tin (Sn)	QUAD	S-XQCC-J44					4194304 bit			e3			.0001 Amp		150 ns
M27C1001-15XF3X	STMicroelectronics	UVPROM	AUTOMOTIVE	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX8	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.25 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.75 V		e3			.0001 Amp	41.885 mm	120 ns
M27C1024-10F6X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.195 mm	100 ns
M27C202-70F3	STMicroelectronics	UVPROM	AUTOMOTIVE	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	131072 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	125 Cel	3-STATE	128KX16	128K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	52.195 mm	70 ns
M27C512-60F6X	STMicroelectronics	UVPROM	INDUSTRIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX8	64K	-40 Cel		DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	524288 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED	.0001 Amp	36.92 mm	60 ns
M27C256B-90XF3	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28	5.25 V	5.72 mm	15.24 mm	Not Qualified	262144 bit	4.75 V		e3			.0001 Amp	36.92 mm	90 ns	12.75
M27C2001-80F6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T32	5.5 V	5.97 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e3			.0001 Amp	41.885 mm	80 ns
M27C1024-20F6	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	65536 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	64KX16	64K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.5 V	5.97 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3			.0001 Amp	52.195 mm	100 ns
M27C4002-45J1TR	STMicroelectronics	UVPROM	COMMERCIAL	44	QCCJ	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	CHIP CARRIER	LDCC44,.7SQ		EPROMs	1.27 mm	70 Cel	3-STATE	256KX16	256K	0 Cel	MATTE TIN	QUAD	S-CQCC-J44	5.5 V	4.83 mm	16.51 mm	Not Qualified	4194304 bit	4.5 V		e3			.0001 Amp	16.51 mm	45 ns
M27C512-90F1E	STMicroelectronics	UVPROM	COMMERCIAL	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	65536 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	70 Cel	3-STATE	64KX8	64K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.72 mm	15.24 mm	Not Qualified	524288 bit	4.5 V		e3			.0001 Amp	36.92 mm	90 ns
M27C1001-12XL6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	128KX8	128K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.25 V	2.28 mm	11.43 mm	Not Qualified	1048576 bit	4.75 V		e0			.0001 Amp	13.97 mm	120 ns
M27C2001-10L6TR	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	262144 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	256KX8	256K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.28 mm	11.43 mm	Not Qualified	2097152 bit	4.5 V		e0			.0001 Amp	13.97 mm	100 ns
M27C4001-10L6X	STMicroelectronics	UVPROM	INDUSTRIAL	32	WQCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS	NO LEAD	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	COMMON	5	5	8	CHIP CARRIER, WINDOW	LCC32,.45X.55		EPROMs	1.27 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	TIN LEAD	QUAD	R-CQCC-N32	5.5 V	2.8 mm	11.43 mm	Not Qualified	4194304 bit	4.5 V		e0			.0001 Amp	13.97 mm	100 ns
M27C1001-70F1	STMicroelectronics	UVPROM	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP32,.6		EPROMs	2.54 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	MATTE TIN	DUAL	R-CDIP-T32	5.5 V	5.72 mm	15.24 mm	Not Qualified	1048576 bit	4.5 V		e3		245	.0001 Amp	41.885 mm	70 ns
M27C256B-60F3X	STMicroelectronics	UVPROM	AUTOMOTIVE	28	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	COMMON	5	5	8	IN-LINE, WINDOW	DIP28,.6		EPROMs	2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28	5.5 V	5.97 mm	15.24 mm	Not Qualified	262144 bit	4.5 V		e3			.0001 Amp	36.92 mm	60 ns	12.75
M27C800-70F6	STMicroelectronics	UVPROM	INDUSTRIAL	42	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	524288 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP42,.6	8	EPROMs	2.54 mm	85 Cel	3-STATE	512KX16	512K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T42	5.5 V	5.97 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e3			.00005 Amp	54.635 mm	70 ns
M27C4002-80XF6X	STMicroelectronics	UVPROM	INDUSTRIAL	40	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	70 mA	262144 words	COMMON	5	5	16	IN-LINE, WINDOW	DIP40,.6		EPROMs	2.54 mm	85 Cel	3-STATE	256KX16	256K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T40	5.25 V	5.97 mm	15.24 mm	Not Qualified	4194304 bit	4.75 V		e3			.0001 Amp	52.195 mm	80 ns

EPROM

EPROM, or Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can be programmed and erased multiple times. EPROM was commonly used in computer systems and electronic devices in the 1970s and 1980s, but has largely been replaced by more advanced memory technologies.

EPROM works by storing data in a grid of memory cells that can be individually programmed and erased using ultraviolet light. Each memory cell consists of a transistor and a floating gate. To program the memory cell, a high voltage is applied to the transistor, which charges the floating gate. To erase the memory cell, ultraviolet light is applied to the chip, which removes the charge from the floating gate. The programming and erasing process can be repeated multiple times, making EPROM a reprogrammable memory technology.

EPROM has several advantages over other types of computer memory, such as ROM and RAM. EPROM can be reprogrammed multiple times, which makes it a versatile and flexible memory technology. EPROM is also non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware.