QCCJ FIFO 1,321

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7205L15JG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	40 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	15 ns
7206L15JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	16KX9	16K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	40 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	15 ns
7207L20JGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	20 ns
7205L50JG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	15 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	50 ns
7205L20JGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel	3-STATE	8KX9	8K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	20 ns
72201L12JSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS		J BEND		SYNCHRONOUS	50 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		256X9	256	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1			83.3 MHz		Not Qualified				e0	20	225		.005 Amp		8 ns
7206L25JGI8	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	85 Cel	3-STATE	16KX9	16K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	28.5 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	25 ns
7206L30JGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	25 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	30 ns
7207L30JGB8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	25 MHz	11.4554 mm		294912 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	30 ns
7205L15JGI8	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	3-STATE	8KX9	8K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	40 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	15 ns
7206L20JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	20 ns
7206L35JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	22.22 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	35 ns
7205L50JB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		8KX9	8K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	73728 bit	4.5 V		e0			NO		13.9954 mm	50 ns
7208L15JG8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	64KX9	64K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	40 MHz	11.4554 mm		589824 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	15 ns
72615L35J	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	230 mA	512 words	5	5	18	CHIP CARRIER	LDCC68,1.0SQ	FIFOs	1.27 mm	85 Cel		512X18	512	-40 Cel	TIN LEAD	QUAD	S-PQCC-J68	1	5.5 V	4.572 mm	28 MHz	24.2062 mm	Not Qualified	9216 bit	4.5 V	BYPASS REGISTER	e0	20	225	YES	.23 Amp	24.2062 mm	21 ns
7207L20JG8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	32KX9	32K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm		294912 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	20 ns
72605L25J	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	230 mA	256 words	5	5	18	CHIP CARRIER	LDCC68,1.0SQ	FIFOs	1.27 mm	85 Cel		256X18	256	-40 Cel	TIN LEAD	QUAD	S-PQCC-J68	1	5.5 V	4.572 mm	40 MHz	24.2062 mm	Not Qualified	4608 bit	4.5 V	BYPASS REGISTER	e0	20	225	YES	.23 Amp	24.2062 mm	15 ns
72221L12JSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS		J BEND		SYNCHRONOUS	50 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		1KX9	1K	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1			83.3 MHz		Not Qualified	9216 bit			e0	20	225		.005 Amp		8 ns
7206L20JG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	16384 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	147456 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	20 ns
7207L20JGB8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm		294912 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	20 ns
7207L50JB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		32KX9	32K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	294912 bit	4.5 V		e0			NO		13.9954 mm	50 ns
7207L25JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	32KX9	32K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	28.5 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	25 ns
7205L20JG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	20 ns
72421L12JSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS		J BEND		SYNCHRONOUS	50 mA	64 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		64X9	64	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1			83.3 MHz		Not Qualified				e0	20	225		.005 Amp		8 ns
7206L20JGB8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	16384 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm		147456 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	20 ns
7205L50JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	15 MHz	11.4554 mm		73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	50 ns
72605L50J	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	50 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	230 mA	256 words	5	5	18	CHIP CARRIER	LDCC68,1.0SQ	FIFOs	1.27 mm	85 Cel		256X18	256	-40 Cel	TIN LEAD	QUAD	S-PQCC-J68	1	5.5 V	4.572 mm	20 MHz	24.2062 mm	Not Qualified	4608 bit	4.5 V	BYPASS REGISTER	e0	20	225	YES	.23 Amp	24.2062 mm	25 ns
7205L30JGB8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	125 Cel	3-STATE	8KX9	8K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	25 MHz	11.4554 mm		73728 bit	4.5 V		e3	30	260	NO	.025 Amp	13.9954 mm	30 ns
72605L35J	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	230 mA	256 words	5	5	18	CHIP CARRIER	LDCC68,1.0SQ	FIFOs	1.27 mm	85 Cel		256X18	256	-40 Cel	TIN LEAD	QUAD	S-PQCC-J68	1	5.5 V	4.572 mm	28 MHz	24.2062 mm	Not Qualified	4608 bit	4.5 V	BYPASS REGISTER	e0	20	225	YES	.23 Amp	24.2062 mm	21 ns
7207L15JG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	32KX9	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	40 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	15 ns
7206L50JB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS		16384 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		16KX9	16K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	147456 bit	4.5 V		e0			NO		13.9954 mm	50 ns
7205L35JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	22.22 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	35 ns
7207L20JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		32KX9	32K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.025 Amp	13.9954 mm	20 ns
7205L30JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		8KX9	8K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	25 MHz	11.4554 mm	Not Qualified	73728 bit	4.5 V		e0	20	225	NO	.025 Amp	13.9954 mm	30 ns
7205L25JG8	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	28.5 MHz	11.4554 mm		73728 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	25 ns
7208L20JG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	120 mA	65536 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel	3-STATE	64KX9	64K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32	3	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	589824 bit	4.5 V		e3	30	260	NO	.012 Amp	13.9954 mm	20 ns
7207L20JGI	Renesas Electronics	BI-DIRECTIONAL FIFO		32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	120 mA	32768 words	5		9	CHIP CARRIER	LDCC32,.5X.6		1.27 mm	85 Cel		32KX9	32K	-40 Cel	MATTE TIN	QUAD	R-PQCC-N32	3	5.5 V	3.556 mm		12.446 mm		294912 bit	4.5 V		e3	30	260	NO	.012 Amp	14.986 mm	20 ns
IDT7201LA12JG	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	20 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		512 words	5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	512X9	512	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	12 ns
IDT72225LB15JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	60 mA	1024 words	5	5	18	CHIP CARRIER	LDCC68,1.0SQ	FIFOs	1.27 mm	85 Cel		1KX18	1K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQCC-J68	1	5.5 V	4.572 mm	66.7 MHz	24.2062 mm	Not Qualified	18432 bit	4.5 V		e3	30	260	YES	.005 Amp	24.2062 mm	10 ns
IDT72211L15JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	35 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel		512X9	512	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.5 mm	66.7 MHz	11.43 mm	Not Qualified	4608 bit	4.5 V		e3	30	260	YES	.005 Amp	13.97 mm	10 ns
IDT72V01L25JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	60 mA	512 words	3.3	3.3	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	3-STATE	512X9	512	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm	28.5 MHz	11.43 mm	Not Qualified	4608 bit	3 V	RETRANSMIT	e3	30	260	NO	.005 Amp	13.97 mm	25 ns
72V04L15JG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words	3.3		9	CHIP CARRIER			1.27 mm	70 Cel		4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified	36864 bit	3 V		e3	30	260	NO		13.97 mm	15 ns
IDT7207L20JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		32KX9	32K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	33.3 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.025 Amp	13.9954 mm	20 ns
IDT7200L50JB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		256 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		256X9	256	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1	5.5 V	3.55 mm		11.43 mm	Not Qualified	2304 bit	4.5 V		e0			NO		13.97 mm	50 ns
7202LA30JGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3			25 MHz		Not Qualified	9216 bit			e3	30	260	NO	.015 Amp		30 ns
IDT72221L25JGI8	Renesas Electronics		INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1024 words	5		9	CHIP CARRIER			1.27 mm	85 Cel		1KX9	1K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	9216 bit	4.5 V		e3			YES		13.97 mm	15 ns
72V06L35JG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		16384 words	3.3		9	CHIP CARRIER			1.27 mm	70 Cel		16KX9	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm		11.43 mm	Not Qualified	147456 bit	3 V		e3	30	260	NO		13.97 mm	35 ns
7202LA50JB	Renesas Electronics		MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words	5		9	CHIP CARRIER			1.27 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	9216 bit	4.5 V		e0			NO		13.97 mm	50 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.