RECTANGULAR FIFO 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7200L30JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	38535Q/M;38534H;883B	J BEND		ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	TIN LEAD	QUAD	R-PQCC-J32	1			33.3 MHz		Not Qualified				e0	20	225		.015 Amp		20 ns
IDT7205L20JG	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5		9	CHIP CARRIER			1.27 mm	70 Cel		8KX9	8K	0 Cel	Matte Tin (Sn)	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	73728 bit	4.5 V		e3			NO		13.9954 mm	20 ns
7201LA50PDG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	15 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	36.576 mm	50 ns
IDT7205L20PDGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE			2.54 mm	125 Cel		8KX9	8K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm		15.24 mm	Not Qualified	73728 bit	4.5 V		e3			NO		36.576 mm	20 ns
5962-8753101XX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE			2.54 mm	125 Cel		512X9	512	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	4608 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.211 mm	30 ns
IDT7280L20PAG8	Renesas Electronics		COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		512 words	5		9	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.5 mm	70 Cel	3-STATE	512X9	512	0 Cel	MATTE TIN	DUAL	R-PDSO-G56	1	5.5 V	1.1 mm		6.1 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	40	260	NO		14 mm	20 ns
IDT72201L15JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		256 words	5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	256X9	256	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	2304 bit	4.5 V		e3			YES		13.97 mm	10 ns
7201LA20LB8	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	30 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	1	5.5 V	3.048 mm	33.33 MHz	11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0		240	NO	.0009 Amp	13.97 mm	20 ns
IDT72V3623L15PFG	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		256X36	256	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	9216 bit	3 V	EASILY EXPANDABLE IN DEPTH AND WIDTH	e3			YES		20 mm	10 ns
IDT7204L20TDG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	5		9	IN-LINE			2.54 mm	70 Cel		4KX9	4K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	36864 bit	4.5 V		e3			NO		37.1475 mm	20 ns
IDT7204L15JGI	Renesas Electronics		INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		4096 words	5		9	CHIP CARRIER			1.27 mm	85 Cel		4KX9	4K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e3			NO		13.9954 mm	15 ns
IDT72V3680L7-5PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	16384 words	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20	FIFOs	.5 mm	70 Cel		16KX36	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm	133.3 MHz	14 mm	Not Qualified	589824 bit	3.15 V		e3	30	260	YES	.015 Amp	20 mm	5 ns
IDT72V3690L10PFG8	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3			YES		20 mm	6.5 ns
IDT7201LA35TPG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		512 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	512X9	512	0 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		34.671 mm	35 ns
7203L20TDG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE		FIFOs		70 Cel	3-STATE	2KX9	2K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V		33.3 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.012 Amp		20 ns
IDT7208L35JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words	5		9	CHIP CARRIER			1.27 mm	70 Cel		64KX9	64K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	589824 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	35 ns
IDT7205L50TPG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE			2.54 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e3			NO		34.671 mm	50 ns
7201LA20LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32				33.3 MHz		Not Qualified	4608 bit			e3				.015 Amp		20 ns
IDT7207L30LB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	40 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	32768 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	TIN LEAD	QUAD	R-XQCC-N32		5.5 V	3.048 mm	25 MHz	11.4554 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e0			NO	.012 Amp	13.97 mm	30 ns
7201LA20LB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	30 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	140 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	TIN LEAD	QUAD	R-CQCC-N32	1	5.5 V	3.048 mm	33.33 MHz	11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e0		240	NO	.0009 Amp	13.97 mm	20 ns
IDT7201LA30LGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	40 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel	3-STATE	512X9	512	-55 Cel	MATTE TIN	QUAD	R-CQCC-N32		5.5 V	3.048 mm		11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO	.015 Amp	13.97 mm	30 ns
IDT7203L25JGI8	Renesas Electronics		INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words	5		9	CHIP CARRIER			1.27 mm	85 Cel		2KX9	2K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	25 ns
IDT7206L20DG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	5		9	IN-LINE			2.54 mm	70 Cel		16KX9	16K	0 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	147456 bit	4.5 V		e3			NO		37.211 mm	20 ns
7203L30LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	40 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER		FIFOs		125 Cel	3-STATE	2KX9	2K	-55 Cel	MATTE TIN	QUAD	R-XQCC-N32		5.5 V		25 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.025 Amp		30 ns
7201LA12L	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC	YES			CMOS		NO LEAD		ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	70 Cel		512X9	512	0 Cel	TIN LEAD	QUAD	R-XQCC-N32				50 MHz		Not Qualified				e0				.015 Amp		12 ns
IDT72V835L10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	2048 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20	FIFOs	.5 mm	70 Cel		2KX18	2K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	36864 bit	3 V		e3	30	260	YES	.01 Amp	20 mm	6.5 ns
7201LA25PDG	Renesas Electronics	OTHER FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm	28.5 MHz	15.24 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	36.576 mm	25 ns
5962-9167702MXX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	65 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE			2.54 mm	125 Cel		8KX9	8K	-55 Cel	TIN LEAD	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Qualified	73728 bit	4.5 V	RETRANSMIT	e0			NO		37.1475 mm	50 ns
IDT7205L25JG	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e3			NO		13.9954 mm	25 ns
7204L20LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	30 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	5	5	9	CHIP CARRIER		FIFOs		125 Cel	3-STATE	4KX9	4K	-55 Cel	MATTE TIN	QUAD	R-XQCC-N32		5.5 V		33.3 MHz		Not Qualified	36864 bit	4.5 V		e3			NO	.025 Amp		20 ns
IDT72211L35JSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS		J BEND		SYNCHRONOUS	50 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	70 Cel		512X9	512	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1			28.6 MHz		Not Qualified				e0	20	225		.005 Amp		20 ns
IDT7200L30JGB8	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		256X9	256	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V		25 MHz		Not Qualified	2304 bit	4.5 V		e3	30	260	NO	.015 Amp		30 ns
IDT72221L15JGI8	Renesas Electronics		INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1024 words	5		9	CHIP CARRIER			1.27 mm	85 Cel		1KX9	1K	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	9216 bit	4.5 V		e3			YES		13.97 mm	10 ns
IDT7200L50TPB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		256 words	5		9	IN-LINE			2.54 mm	125 Cel		256X9	256	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.57 mm		7.62 mm	Not Qualified	2304 bit	4.5 V		e0			NO		34.67 mm	50 ns
7201LA30LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	40 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32						Not Qualified	4608 bit			e3				.015 Amp		30 ns
7201LA25DG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V		28.5 MHz		Not Qualified	4608 bit	4.5 V		e3			NO	.005 Amp		25 ns
IDT7202LA20LGB8	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	30 ns	1	CMOS	MIL-STD-883 Class B	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	MATTE TIN	QUAD	R-XQCC-N32		5.5 V		33.3 MHz		Not Qualified	9216 bit	4.5 V		e3			NO	.015 Amp		20 ns
IDT72V251L10JG	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		8192 words	3.3		9	CHIP CARRIER			1.27 mm	70 Cel		8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.556 mm		11.4554 mm	Not Qualified	73728 bit	3 V		e3	30	260	YES		13.9954 mm	6.5 ns
72V36100L6PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	6 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX36	64K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3		260	YES		20 mm	4 ns
7201LA30PDGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28	1					Not Qualified				e3	30	260		.015 Amp		30 ns
IDT7203L15JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words	5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	2KX9	2K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	15 ns
7202LA15DI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCN	RECTANGULAR	CERAMIC	YES			CMOS		NO LEAD		ASYNCHRONOUS	80 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55	FIFOs	1.27 mm	85 Cel		1KX9	1K	-40 Cel	TIN LEAD	QUAD	R-XQCC-N32				40 MHz		Not Qualified	9216 bit			e0				.005 Amp		15 ns
IDT7203L40JB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	50 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	125 Cel		2KX9	2K	-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1	5.5 V	3.556 mm	20 MHz	11.4554 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT	e0	20	225	NO	.025 Amp	13.9954 mm	40 ns
72V36100L7-5PFG8	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		64KX36	64K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3			YES		20 mm	5 ns
7201LA25JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5		9	CHIP CARRIER			1.27 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	25 ns
7203L40PDGB	Renesas Electronics	BI-DIRECTIONAL FIFO		28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	50 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5		9	IN-LINE				125 Cel	3-STATE	2KX9	2K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28	1	5.5 V		20 MHz			18432 bit	4.5 V		e3	30	260	NO	.025 Amp		40 ns
7203L30DGB8	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	150 mA	2048 words	5		9	IN-LINE				125 Cel		2KX9	2K	-55 Cel		DUAL	R-CDIP-T28		5.5 V					18432 bit	4.5 V	RETRANSMIT				NO			30 ns
IDT7204L20PDGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	30 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		4096 words	5		9	IN-LINE			2.54 mm	125 Cel		4KX9	4K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28	1	5.5 V	4.699 mm		15.24 mm	Not Qualified	36864 bit	4.5 V		e3			NO		36.576 mm	20 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.