Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
60 mA |
4096 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
40 MHz |
24.2062 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
24.2062 mm |
15 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
3.6 V |
1.2 mm |
6.1 mm |
73728 bit |
3 V |
RETRANSMIT |
e3 |
NO |
14 mm |
20 ns |
|||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
70 mA |
262144 words |
2.5 |
2.5 |
18 |
GRID ARRAY |
BGA240,18X18,40 |
9 |
FIFOs |
1 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
83 MHz |
19 mm |
Not Qualified |
4718592 bit |
2.375 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
YES |
.06 Amp |
19 mm |
3.6 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1024 words |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
1KX36 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
3.15 V |
e3 |
YES |
20 mm |
5 ns |
|||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
40 mA |
8192 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA144,12X12,40 |
FIFOs |
1 mm |
85 Cel |
8KX36 |
8K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
133.3 MHz |
13 mm |
Not Qualified |
294912 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.015 Amp |
13 mm |
5 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1024 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.6 mm |
7 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
YES |
7 mm |
10 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
6.1 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e3 |
40 |
260 |
NO |
14 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
35 ns |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
IN-LINE |
FIFOs |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
DUAL |
R-GDIP-T28 |
5.5 V |
40 MHz |
Not Qualified |
36864 bit |
4.5 V |
e3 |
NO |
.012 Amp |
15 ns |
|||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
20 ns |
1 |
CMOS |
THROUGH-HOLE |
SERIAL |
SYNCHRONOUS |
140 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
4.699 mm |
22.2 MHz |
15.24 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.002 Amp |
36.576 mm |
35 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
40 MHz |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
.005 Amp |
34.671 mm |
15 ns |
||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
40 |
260 |
YES |
14 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
25 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
100 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
35 mA |
16384 words |
3.3 |
3.3 |
18 |
GRID ARRAY, LOW PROFILE |
BGA100,10X10,40 |
9 |
FIFOs |
1 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
133.3 MHz |
11 mm |
Not Qualified |
294912 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
30 |
260 |
YES |
.015 Amp |
11 mm |
5 ns |
||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
256 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
NO |
.005 Amp |
37.1475 mm |
25 ns |
||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
9 |
FIFOs |
.65 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
133.3 MHz |
14 mm |
Not Qualified |
9216 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 1K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e3 |
30 |
260 |
YES |
.015 Amp |
14 mm |
5 ns |
||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
8 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX8 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.6 mm |
7 mm |
Not Qualified |
32768 bit |
3 V |
e3 |
YES |
7 mm |
10 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.97 mm |
15 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
100 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
11 mm |
Not Qualified |
294912 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 32K X 9 |
e1 |
YES |
11 mm |
5 ns |
||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
UNSPECIFIED |
YES |
35 ns |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-XQCC-N32 |
5.5 V |
28.5 MHz |
Not Qualified |
4608 bit |
4.5 V |
e3 |
NO |
.005 Amp |
25 ns |
||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
8KX36 |
8K |
-40 Cel |
QUAD |
R-PQFP-G128 |
3.45 V |
1.6 mm |
14 mm |
294912 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
20 mm |
5 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
40 |
260 |
YES |
14 mm |
10 ns |
|||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
YES |
10 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
40 |
260 |
NO |
18.3642 mm |
15 ns |
||||||||||||
Renesas Electronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
IN-LINE |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.57 mm |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
e0 |
NO |
34.67 mm |
20 ns |
||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
256 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
11.4554 mm |
2304 bit |
3 V |
e3 |
30 |
260 |
YES |
13.9954 mm |
10 ns |
|||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 4K X 9 |
e3 |
YES |
14 mm |
5 ns |
||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
YES |
24.2062 mm |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
35 mA |
16384 words |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA100,10X10,40 |
9 |
FIFOs |
1 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
133.3 MHz |
11 mm |
Not Qualified |
294912 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
30 |
260 |
YES |
.015 Amp |
11 mm |
5 ns |
||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
3.3 |
16 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
2KX16 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
10 mm |
Not Qualified |
32768 bit |
3 V |
e3 |
YES |
10 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.6 mm |
7 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
YES |
7 mm |
10 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
40 mA |
1024 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA144,12X12,40 |
FIFOs |
1 mm |
85 Cel |
1KX36 |
1K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
133.3 MHz |
13 mm |
Not Qualified |
36864 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
40 |
260 |
YES |
.015 Amp |
13 mm |
5 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
YES |
24.2062 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
36 |
GRID ARRAY |
1 mm |
85 Cel |
32KX36 |
32K |
-40 Cel |
BOTTOM |
S-PBGA-B144 |
3.45 V |
1.97 mm |
13 mm |
1179648 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
13 mm |
5 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
32KX18 |
32K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
3 V |
e3 |
40 |
260 |
YES |
14 mm |
10 ns |
|||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
73728 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 8K X 9 |
e3 |
YES |
14 mm |
5 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
2.5 |
2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.76 mm |
166 MHz |
19 mm |
Not Qualified |
18874368 bit |
2.375 V |
e1 |
YES |
.14 Amp |
19 mm |
3.8 ns |
||||||||
|
Renesas Electronics |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
6.1 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
40 |
260 |
NO |
14 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
512 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.556 mm |
11.4554 mm |
Not Qualified |
4608 bit |
3 V |
e3 |
30 |
260 |
YES |
13.9954 mm |
10 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
100 mA |
2048 words |
3.3 |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
3.6 V |
1.2 mm |
33.3 MHz |
6.1 mm |
Not Qualified |
18432 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
14 mm |
20 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
8192 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
16384 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
50 MHz |
10 mm |
Not Qualified |
294912 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
12 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX9 |
16K |
-40 Cel |
QUAD |
S-PQFP-G64 |
3.6 V |
1.6 mm |
14 mm |
147456 bit |
3 V |
RETRANSMIT |
YES |
14 mm |
10 ns |
|||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
1024 words |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
1KX36 |
1K |
-40 Cel |
QUAD |
R-PQFP-G128 |
3.45 V |
1.6 mm |
14 mm |
36864 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
20 mm |
5 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
10 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
YES |
10 mm |
15 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
32 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
16KX32 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
524288 bit |
3.15 V |
e3 |
YES |
20 mm |
6.5 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
1024 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX18 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQCC-J68 |
5.5 V |
4.572 mm |
24.2062 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
YES |
24.2062 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
2048 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
40 |
260 |
YES |
.005 Amp |
10 mm |
10 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.