Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
75 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
3.6 V |
3.55 mm |
11.43 mm |
Not Qualified |
73728 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
260 |
NO |
18.3642 mm |
15 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
524288 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512KX9 |
512K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e3 |
NOT SPECIFIED |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
14 mm |
15 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
14 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
14 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
240 |
NO |
.015 Amp |
14 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
524288 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512KX9 |
512K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e3 |
NOT SPECIFIED |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
3.3 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.6 mm |
7 mm |
4608 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
YES |
7 mm |
10 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
1024 words |
3.3 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G56 |
3.6 V |
1.2 mm |
6.1 mm |
9216 bit |
3 V |
RETRANSMIT |
e3 |
40 |
260 |
NO |
14 mm |
20 ns |
||||||||||||||
|
Nte Electronics |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
50 mA |
16 words |
4.5 |
4 |
IN-LINE |
DIP16,.3 |
2.54 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDIP-T16 |
6 V |
5.08 mm |
7.62 mm |
64 bit |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
22 mm |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
13.97 mm |
25 ns |
|||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.6 mm |
7 mm |
36864 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
YES |
7 mm |
10 ns |
|||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
20 mA |
1024 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP32,.35SQ,32 |
FIFOs |
.8 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G32 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
7 mm |
Not Qualified |
9216 bit |
3 V |
e3 |
30 |
260 |
YES |
.005 Amp |
7 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
YES |
14 mm |
10 ns |
||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
8192 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
Renesas Electronics |
INDUSTRIAL |
100 |
LBGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8192 words |
3.3 |
18 |
GRID ARRAY, LOW PROFILE |
1 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
11 mm |
147456 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 16K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
260 |
YES |
11 mm |
5 ns |
||||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
294912 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
294912 bit |
3 V |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
10 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
10 mm |
15 ns |
|||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS/ASYNCHRONOUS |
180 mA |
524288 words |
2.5 |
2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
166 MHz |
Not Qualified |
18874368 bit |
2.375 V |
e0 |
30 |
225 |
YES |
.14 Amp |
3.8 ns |
||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
8192 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
147456 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.6SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
294912 bit |
3 V |
e0 |
30 |
240 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
15 ns |
|||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
28 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
9 |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
40 MHz |
36864 bit |
4.5 V |
e3 |
260 |
NO |
.012 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Matte Tin (Sn) |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
14 mm |
Not Qualified |
294912 bit |
3 V |
e3 |
NOT SPECIFIED |
260 |
YES |
14 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16384 words |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
16KX36 |
16K |
-40 Cel |
TIN |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
589824 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e3 |
260 |
YES |
20 mm |
5 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4KX18 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.6 V |
1.6 mm |
14 mm |
73728 bit |
3 V |
e3 |
260 |
YES |
20 mm |
10 ns |
||||||||||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOP28,.5 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
28.5 MHz |
8.763 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
30 |
225 |
NO |
.0005 Amp |
18.3642 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
20 |
225 |
NO |
.002 Amp |
13.97 mm |
25 ns |
||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
10 mm |
10 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
270 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
14 mm |
15 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
3.6 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
NO |
.005 Amp |
13.9954 mm |
25 ns |
|||||||
Integrated Device Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
50 mA |
8192 words |
3.3 |
3.3 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Tin/Lead (Sn85Pb15) |
QUAD |
R-PQCC-J32 |
1 |
3.6 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
3 V |
e0 |
20 |
225 |
NO |
.005 Amp |
13.9954 mm |
25 ns |
|||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
524288 words |
3.3 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
512KX9 |
512K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
e3 |
YES |
14 mm |
10 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
2048 words |
3.3 |
3.3 |
18 |
FLATPACK |
QFP80,.64SQ |
9 |
FIFOs |
.65 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
133.3 MHz |
14 mm |
Not Qualified |
36864 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e3 |
30 |
260 |
YES |
.015 Amp |
14 mm |
5 ns |
||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
294912 bit |
3 V |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.55 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
40 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
15 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.