Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
2KX18 |
2K |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQCC-J68 |
3 |
5.5 V |
4.57 mm |
67 MHz |
24.23 mm |
Not Qualified |
36864 bit |
4.5 V |
e4 |
30 |
260 |
YES |
24.23 mm |
12 ns |
|||||||
Texas Instruments |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
40 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
QUAD |
S-PQCC-J44 |
5.5 V |
4.57 mm |
25 MHz |
16.5862 mm |
Not Qualified |
18432 bit |
4.5 V |
BYPASS XCVR |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
.0004 Amp |
16.5862 mm |
35 ns |
|||||||||
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45.45 ns |
2 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
.4 mA |
64 words |
5 |
5 |
1 |
SMALL OUTLINE |
SOP24,.4 |
FIFOs |
1.27 mm |
85 Cel |
TOTEM POLE |
64X1 |
64 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.65 mm |
60 MHz |
7.5 mm |
Not Qualified |
64 bit |
4.5 V |
e4 |
30 |
260 |
NO |
.0004 Amp |
15.4 mm |
20 ns |
|||||
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45.45 ns |
2 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
.4 mA |
256 words |
5 |
5 |
1 |
SMALL OUTLINE |
SOP24,.4 |
FIFOs |
1.27 mm |
85 Cel |
TOTEM POLE |
256X1 |
256 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G24 |
1 |
5.5 V |
2.65 mm |
22 MHz |
7.5 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
30 |
260 |
NO |
.0004 Amp |
15.4 mm |
20 ns |
|||||
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
80 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP80,.55SQ,20 |
FIFOs |
.5 mm |
85 Cel |
3-STATE |
2KX18 |
2K |
-40 Cel |
NICKEL PALLADIUM GOLD |
QUAD |
S-PQFP-G80 |
3 |
5.5 V |
1.6 mm |
67 MHz |
12 mm |
Not Qualified |
36864 bit |
4.5 V |
e4 |
30 |
260 |
YES |
12 mm |
12 ns |
|||||||
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
16.67 ns |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
.4 mA |
256 words |
5 |
5 |
1 |
SMALL OUTLINE |
SOP28,.4 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
256X1 |
256 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
1 |
5.5 V |
2.65 mm |
60 MHz |
7.5 mm |
Not Qualified |
256 bit |
4.5 V |
e4 |
30 |
260 |
YES |
.0004 Amp |
17.9 mm |
9 ns |
|||||
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
28 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
SYNCHRONOUS |
128 words |
5 |
5 |
1 |
SMALL OUTLINE, SHRINK PITCH |
SSOP28,.4 |
FIFOs |
.635 mm |
85 Cel |
128X1 |
128 |
-40 Cel |
DUAL |
R-PDSO-G28 |
Not Qualified |
.0004 Amp |
12 ns |
||||||||||||||||||||||||
|
Texas Instruments |
OTHER FIFO |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
16.67 ns |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
.4 mA |
64 words |
5 |
5 |
1 |
SMALL OUTLINE |
SOP28,.4 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
64X1 |
64 |
-40 Cel |
NICKEL PALLADIUM GOLD |
DUAL |
R-PDSO-G28 |
1 |
5.5 V |
2.65 mm |
22 MHz |
7.5 mm |
Not Qualified |
64 bit |
4.5 V |
e4 |
30 |
260 |
YES |
.0004 Amp |
17.9 mm |
9 ns |
|||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
12.5 MHz |
Not Qualified |
e0 |
.008 Amp |
65 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
12.5 MHz |
Not Qualified |
e0 |
.008 Amp |
65 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
7.14 MHz |
Not Qualified |
9216 bit |
e0 |
.008 Amp |
120 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
7.14 MHz |
Not Qualified |
36864 bit |
e0 |
.002 Amp |
120 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
7.14 MHz |
Not Qualified |
9216 bit |
e0 |
.008 Amp |
120 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
12.5 MHz |
Not Qualified |
18432 bit |
e0 |
.002 Amp |
65 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
10 MHz |
Not Qualified |
36864 bit |
e0 |
.002 Amp |
80 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
7.14 MHz |
Not Qualified |
18432 bit |
e0 |
.002 Amp |
120 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
10 MHz |
Not Qualified |
18432 bit |
e0 |
.002 Amp |
80 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
7.14 MHz |
Not Qualified |
e0 |
.008 Amp |
120 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
10 MHz |
Not Qualified |
9216 bit |
e0 |
.008 Amp |
80 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
7.14 MHz |
Not Qualified |
e0 |
.008 Amp |
120 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
10 MHz |
Not Qualified |
e0 |
.008 Amp |
80 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
12.5 MHz |
Not Qualified |
9216 bit |
e0 |
.008 Amp |
65 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
12.5 MHz |
Not Qualified |
36864 bit |
e0 |
.002 Amp |
65 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
7.14 MHz |
Not Qualified |
18432 bit |
e0 |
.002 Amp |
120 ns |
|||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
10 MHz |
Not Qualified |
e0 |
.008 Amp |
80 ns |
||||||||||||||||||||
Analog Devices |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
10 MHz |
Not Qualified |
e0 |
.008 Amp |
80 ns |
||||||||||||||||||||
STMicroelectronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
12.5 MHz |
Not Qualified |
e0 |
.002 Amp |
65 ns |
||||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T40 |
5.25 V |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
|||||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T40 |
5.25 V |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
|||||||||||||||||||||
STMicroelectronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
||||||||||||||||
STMicroelectronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
6 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
52.07 mm |
|||||||||||||||
STMicroelectronics |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
16 words |
3/15 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T16 |
3 MHz |
Not Qualified |
e0 |
||||||||||||||||||||||||
STMicroelectronics |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
16 words |
3/15 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-XDIP-T16 |
3 MHz |
Not Qualified |
e0 |
||||||||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
4.445 mm |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
YES |
36.83 mm |
||||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T28 |
5.25 V |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
YES |
||||||||||||||||||||||
STMicroelectronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T28 |
5.25 V |
4.445 mm |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
YES |
36.83 mm |
||||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-CDIP-T28 |
5.25 V |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
YES |
||||||||||||||||||||||
STMicroelectronics |
OTHER FIFO |
INDUSTRIAL |
20 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
333.33 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
16 words |
5 |
3/15 |
4 |
CHIP CARRIER |
LDCC20,.4SQ |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J20 |
15 V |
4.57 mm |
3 MHz |
8.9662 mm |
Not Qualified |
64 bit |
3 V |
e0 |
YES |
8.9662 mm |
370 ns |
|||||||||||
STMicroelectronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
52.07 mm |
|||||||||||||||
STMicroelectronics |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
250 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
4.445 mm |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
52.07 mm |
|||||||||||||||||||
STMicroelectronics |
INDUSTRIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
166.67 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
128 words |
5 |
8 |
IN-LINE |
2.54 mm |
85 Cel |
128X8 |
128 |
-40 Cel |
DUAL |
R-PDIP-T40 |
5.25 V |
4.445 mm |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
MAIL BOX |
YES |
52.07 mm |
|||||||||||||||||||
STMicroelectronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
Not Qualified |
e0 |
80 ns |
|||||||||||||||||||||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
SYNCHRONOUS |
500 mA |
1048576 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B209 |
3 |
100 MHz |
Not Qualified |
37748736 bit |
e1 |
10 ns |
|||||||||||||||||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
41.67 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
524288 words |
1.5 |
1.5,1.8,3.3 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B209 |
3 |
1.575 V |
1.96 mm |
100 MHz |
14 mm |
Not Qualified |
18874368 bit |
1.425 V |
ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32 |
e1 |
YES |
22 mm |
10 ns |
||||||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
BALL |
SYNCHRONOUS |
500 mA |
1048576 words |
1.8 |
1.8 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
1MX36 |
1M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B209 |
3 |
100 MHz |
Not Qualified |
37748736 bit |
e1 |
10 ns |
|||||||||||||||||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
41.67 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
2097152 words |
1.5 |
1.5,1.8,3.3 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B209 |
3 |
1.575 V |
1.96 mm |
100 MHz |
14 mm |
Not Qualified |
75497472 bit |
1.425 V |
ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32 |
e1 |
YES |
22 mm |
10 ns |
||||||||
|
Infineon Technologies |
OTHER FIFO |
INDUSTRIAL |
209 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
41.67 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
500 mA |
2097152 words |
1.5 |
1.5,1.8,3.3 |
36 |
GRID ARRAY |
BGA209,11X19,40 |
FIFOs |
1 mm |
85 Cel |
2MX36 |
2M |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B209 |
3 |
1.575 V |
1.96 mm |
100 MHz |
14 mm |
Not Qualified |
75497472 bit |
1.425 V |
ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32 |
e1 |
YES |
22 mm |
10 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.