Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
230 mA |
512 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
50 MHz |
24.2062 mm |
Not Qualified |
9216 bit |
4.5 V |
BYPASS REGISTER |
e0 |
20 |
225 |
YES |
.23 Amp |
24.2062 mm |
10 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
16384 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
16KX9 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
147456 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
16384 words |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
50 MHz |
14 mm |
294912 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
YES |
.02 Amp |
14 mm |
12 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
1KX18 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
8192 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
147456 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
16384 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
294912 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
256X18 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J68 |
1 |
5.5 V |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
32768 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
85 Cel |
32KX72 |
32K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
2359296 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.05 Amp |
19 mm |
3.6 ns |
||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
65536 words |
5 |
5 |
9 |
FLATPACK |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
66.7 MHz |
Not Qualified |
589824 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN |
e3 |
YES |
.02 Amp |
10 ns |
|||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
73728 bit |
4.5 V |
YES |
10 mm |
15 ns |
|||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
120 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.4 mm |
85 Cel |
512X36 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G120 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
18432 bit |
4.5 V |
MAIL BOX; RETRANSMIT |
e3 |
260 |
YES |
14 mm |
13 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
2048 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
2KX18 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
18432 bit |
4.5 V |
YES |
14 mm |
10 ns |
|||||||||||||||||||
Renesas Electronics |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
9 |
FLATPACK |
85 Cel |
64KX9 |
64K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
589824 bit |
4.5 V |
30 |
260 |
YES |
12 ns |
||||||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK |
85 Cel |
4KX9 |
4K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
36864 bit |
4.5 V |
YES |
10 ns |
||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
8192 words |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
.5 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
50 MHz |
10 mm |
147456 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
YES |
.02 Amp |
10 mm |
12 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
512 words |
5 |
18 |
85 Cel |
512X18 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
9216 bit |
4.5 V |
e3 |
YES |
.005 Amp |
15 ns |
||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
512 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
512X18 |
512 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
9216 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
60 mA |
2048 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
2KX18 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J68 |
1 |
5.5 V |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
2048 words |
5 |
9 |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
131072 words |
5 |
5 |
9 |
FLATPACK |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
128KX9 |
128K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
50 MHz |
Not Qualified |
1179648 bit |
4.5 V |
e3 |
YES |
.02 Amp |
12 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
4096 words |
5 |
9 |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G32 |
3 |
5.5 V |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
64 words |
5 |
9 |
85 Cel |
3-STATE |
64X9 |
64 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
4096 words |
5 |
9 |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
1KX18 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
SERIAL |
SYNCHRONOUS |
1024 words |
5 |
16 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
1KX16 |
1K |
-40 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
8.763 mm |
Not Qualified |
16384 bit |
4.5 V |
PORTA/PORTB:PARALLEL/SERIAL |
e3 |
NOT SPECIFIED |
260 |
NO |
18.3642 mm |
25 ns |
|||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
1 |
40 MHz |
Not Qualified |
73728 bit |
e0 |
20 |
225 |
.012 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
32768 words |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
1.27 mm |
85 Cel |
3-STATE |
32KX9 |
32K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
294912 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
50 mA |
8192 words |
5 |
5 |
9 |
FIFOs |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G32 |
3 |
5.5 V |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
|||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
18 |
85 Cel |
256X18 |
256 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
4608 bit |
4.5 V |
e3 |
YES |
.005 Amp |
15 ns |
||||||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
50 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
230 mA |
512 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
1 |
5.5 V |
4.572 mm |
20 MHz |
24.2062 mm |
Not Qualified |
9216 bit |
4.5 V |
BYPASS REGISTER |
e0 |
20 |
225 |
YES |
.23 Amp |
24.2062 mm |
25 ns |
||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
131072 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
85 Cel |
128KX72 |
128K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
9437184 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.05 Amp |
19 mm |
3.6 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
8192 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||
Renesas Electronics |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
131072 words |
2.5 |
72 |
GRID ARRAY |
1 mm |
85 Cel |
128KX72 |
128K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B324 |
3 |
1.97 mm |
19 mm |
Not Qualified |
9437184 bit |
e0 |
30 |
225 |
YES |
19 mm |
||||||||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
50 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
256 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
20 MHz |
14 mm |
Not Qualified |
4608 bit |
4.5 V |
BYPASS REGISTER |
e0 |
30 |
240 |
YES |
.23 Amp |
14 mm |
25 ns |
||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
180 mA |
524288 words |
2.5 |
2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
85 Cel |
512KX36 |
512K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.76 mm |
166 MHz |
19 mm |
Not Qualified |
18874368 bit |
2.375 V |
e0 |
30 |
225 |
YES |
.14 Amp |
19 mm |
3.8 ns |
|||||||
|
Renesas Electronics |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
18 |
GRID ARRAY |
1.27 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
MATTE TIN |
BOTTOM |
S-PBGA-B121 |
5.5 V |
3.5 mm |
15 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
YES |
15 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
1KX18 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J68 |
1 |
5.5 V |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
Renesas Electronics |
INDUSTRIAL |
64 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
5 |
9 |
FLATPACK |
85 Cel |
128KX9 |
128K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1179648 bit |
4.5 V |
30 |
260 |
YES |
12 ns |
||||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
130 mA |
131072 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
85 Cel |
128KX72 |
128K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
9437184 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
NOT SPECIFIED |
260 |
YES |
.02 Amp |
19 mm |
3.6 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
150 mA |
2048 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.015 Amp |
14 mm |
15 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
130 mA |
65536 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
85 Cel |
64KX72 |
64K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
4718592 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
NOT SPECIFIED |
260 |
YES |
.02 Amp |
19 mm |
3.6 ns |
|||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
1.27 mm |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
64 words |
5 |
9 |
85 Cel |
3-STATE |
64X9 |
64 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
576 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
18 |
GRID ARRAY |
1.27 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
BOTTOM |
S-PBGA-B121 |
5.5 V |
3.5 mm |
15 mm |
9216 bit |
4.5 V |
30 |
260 |
YES |
15 mm |
10 ns |
|||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6.7 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
524288 words |
2.5 |
18 |
GRID ARRAY |
1 mm |
85 Cel |
512KX18 |
512K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
19 mm |
Not Qualified |
9437184 bit |
2.375 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
YES |
19 mm |
3.8 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
4096 words |
5 |
9 |
85 Cel |
3-STATE |
4KX9 |
4K |
-40 Cel |
QUAD |
R-PQFP-G32 |
5.5 V |
36864 bit |
4.5 V |
YES |
.005 Amp |
15 ns |
|||||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
68 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
18 |
85 Cel |
256X18 |
256 |
-40 Cel |
QUAD |
R-PQCC-J68 |
5.5 V |
4608 bit |
4.5 V |
YES |
.005 Amp |
15 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.