INDUSTRIAL FIFO 1,726

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYF2144V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	4194304 words	1.5	3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF1018V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	524288 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	18874368 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2144V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	400 mA	4194304 words	1.5	1.8	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF2072V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	2097152 words	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	2MX36	2M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	75497472 bit			e1	30	260				10 ns
CYF1036V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF1036V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	41.67 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	1048576 words	1.5	1.5,1.8,3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	100 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRES 1.8V SUPPLY; SELECTABLE MEMORY ORGANIZATION-X9, X12 ,X16, X18, X20, X24, X32	e1			YES		22 mm	10 ns
CYF2018V33L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	524288 words	3.3	3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	18874368 bit			e1						10 ns
CYF2018V18L-100BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL		SYNCHRONOUS	500 mA	524288 words	1.8	1.8	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	512KX36	512K	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3			100 MHz		Not Qualified	18874368 bit			e1						10 ns
CYF0144V18L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	1.5	1.8	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF0036V18L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	600 mA	1048576 words	1.5	1.5,1.8	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	1MX36	1M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	37748736 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
CYF0144V33L-133BGXI	Infineon Technologies	OTHER FIFO	INDUSTRIAL	209	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	500 mA	4194304 words	1.5	3.3	36	GRID ARRAY	BGA209,11X19,40	FIFOs	1 mm	85 Cel	4MX36	4M	-40 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B209	3	1.575 V	1.96 mm	133 MHz	14 mm	Not Qualified	150994944 bit	1.425 V	ALSO REQUIRED 1.8V SUPPLY NOM, ALTERNATE MIN MEMORY WIDTH : 9	e1			YES		22 mm	10 ns
DS2010RN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.56 mm	15.38 MHz	11.43 mm	Not Qualified	9216 bit		RETRANSMIT	e0			NO	.008 Amp	12.45 mm	50 ns
DS2013N	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	7.14 MHz	15.24 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	36.83 mm	120 ns
DS2012N-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	4KX9	4K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	15.38 MHz	15.24 mm	Not Qualified	36864 bit		RETRANSMIT	e0			NO	.002 Amp	36.83 mm	50 ns
DS2012N-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	4KX9	4K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	10 MHz	15.24 mm	Not Qualified	36864 bit			e0			NO	.002 Amp	36.83 mm	80 ns
DS2011DN-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	10 MHz	7.62 mm	Not Qualified	18432 bit			e0			NO	.002 Amp	34.795 mm	80 ns
DS2009RN-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS	J BEND		ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	512X9	512	-40 Cel	Tin/Lead (Sn/Pb)	QUAD	R-PQCC-J32				12.5 MHz		Not Qualified				e0				.008 Amp		65 ns
DS2009N-35	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	22.22 MHz	15.24 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	36.83 mm	35 ns
DS2013DN-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	12.5 MHz	7.62 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	34.795 mm	65 ns
DS2012RN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	4KX9	4K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.56 mm	15.38 MHz	11.43 mm	Not Qualified	36864 bit		RETRANSMIT	e0			NO	.002 Amp	12.45 mm	50 ns
DS2010N-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	10 MHz	15.24 mm	Not Qualified	9216 bit			e0			NO	.008 Amp	36.83 mm	80 ns
DS2012N-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	4KX9	4K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	12.5 MHz	15.24 mm	Not Qualified	36864 bit			e0			NO	.002 Amp	36.83 mm	65 ns
DS2011DN	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				7.14 MHz		Not Qualified	18432 bit			e0				.002 Amp		120 ns
DS2010N-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	12.5 MHz	15.24 mm	Not Qualified	9216 bit			e0			NO	.008 Amp	36.83 mm	65 ns
DS2009RN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.56 mm	15.38 MHz	11.43 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	12.45 mm	50 ns
DS2011N-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	10 MHz	15.24 mm	Not Qualified	18432 bit			e0			NO	.002 Amp	36.83 mm	80 ns
DS2013DN-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	10 MHz	7.62 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	34.795 mm	80 ns
DS2013N-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	10 MHz	15.24 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	36.83 mm	80 ns
DS2011N-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	12.5 MHz	15.24 mm	Not Qualified	18432 bit			e0			NO	.002 Amp	36.83 mm	65 ns
DS2010DN-80	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	10 MHz	7.62 mm	Not Qualified	9216 bit			e0			NO	.008 Amp	34.795 mm	80 ns
DS2010DN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	15.38 MHz	7.62 mm	Not Qualified	9216 bit		RETRANSMIT	e0			NO	.008 Amp	34.795 mm	50 ns
DS2009DN	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	512X9	512	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				7.14 MHz		Not Qualified				e0				.008 Amp		120 ns
DS2013DN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	15.38 MHz	7.62 mm	Not Qualified	73728 bit		RETRANSMIT	e0			NO	.002 Amp	34.795 mm	50 ns
DS2010N-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	15.38 MHz	15.24 mm	Not Qualified	9216 bit		RETRANSMIT	e0			NO	.008 Amp	36.83 mm	50 ns
DS2010DN-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	12.5 MHz	7.62 mm	Not Qualified	9216 bit			e0			NO	.008 Amp	34.795 mm	65 ns
DS2013N-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	15.38 MHz	15.24 mm	Not Qualified	73728 bit		RETRANSMIT	e0			NO	.002 Amp	36.83 mm	50 ns
DS2010DN	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	120 mA	1024 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	1KX9	1K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				7.14 MHz		Not Qualified	9216 bit			e0				.008 Amp		120 ns
DS2009RN-35	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.56 mm	22.22 MHz	11.43 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	12.45 mm	35 ns
DS2013N-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	12.5 MHz	15.24 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	36.83 mm	65 ns
DS2012N	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	THROUGH-HOLE		ASYNCHRONOUS	120 mA	4096 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	4KX9	4K	-40 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T28				7.14 MHz		Not Qualified	36864 bit			e0				.002 Amp		120 ns
DS2011DN-65	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	12.5 MHz	7.62 mm	Not Qualified	18432 bit			e0			NO	.002 Amp	34.795 mm	65 ns
DS2013DN	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	8192 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	8KX9	8K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	7.14 MHz	7.62 mm	Not Qualified	73728 bit			e0			NO	.002 Amp	34.795 mm	120 ns
DS2009N-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	15.38 MHz	15.24 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	36.83 mm	50 ns
DS2011RN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6	FIFOs	1.27 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	QUAD	R-PQCC-J32			3.56 mm	15.38 MHz	11.43 mm	Not Qualified	18432 bit		RETRANSMIT	e0			NO	.002 Amp	12.45 mm	50 ns
DS2011N-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.6	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			5.08 mm	15.38 MHz	15.24 mm	Not Qualified	18432 bit		RETRANSMIT	e0			NO	.002 Amp	36.83 mm	50 ns
DS2011DN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	2KX9	2K	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	15.38 MHz	7.62 mm	Not Qualified	18432 bit		RETRANSMIT	e0			NO	.002 Amp	34.795 mm	50 ns
DS2009DN-50	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	15.38 MHz	7.62 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	34.795 mm	50 ns
DS2009DN-35	Maxim Integrated	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.3	FIFOs	2.54 mm	85 Cel	512X9	512	-40 Cel	TIN LEAD	DUAL	R-PDIP-T28			4.572 mm	22.22 MHz	7.62 mm	Not Qualified	4608 bit		RETRANSMIT	e0			NO	.008 Amp	34.795 mm	35 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.