Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Toshiba |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
SYNCHRONOUS |
4 words |
5 |
2/6 |
16 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
85 Cel |
3-STATE |
4X16 |
4 |
-40 Cel |
DUAL |
R-PDIP-T16 |
6 V |
4.45 mm |
12 MHz |
7.62 mm |
Not Qualified |
64 bit |
2 V |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
19.25 mm |
550 ns |
|||||||||||
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
83.33 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED |
e0 |
YES |
10.3 mm |
||||||||||||||||
|
Toshiba |
OTHER FIFO |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
ASYNCHRONOUS |
16 words |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.3 |
FIFOs |
1.27 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDSO-G16 |
12 MHz |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
OTHER FIFO |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4 words |
5 |
2/6 |
16 |
SMALL OUTLINE |
SOP16,.3 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
4X16 |
4 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
12 MHz |
5.3 mm |
Not Qualified |
64 bit |
2 V |
e0 |
YES |
10.3 mm |
550 ns |
||||||||||||
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
100 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
64 bit |
2 V |
e0 |
YES |
10.3 mm |
|||||||||||||||||
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
100 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
64 bit |
2 V |
e0 |
YES |
10.3 mm |
|||||||||||||||||
|
Toshiba |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
16 words |
2/6 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDIP-T16 |
12 MHz |
Not Qualified |
|||||||||||||||||||||||||
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
83.33 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
64 bit |
2 V |
REGISTER BASED |
e0 |
YES |
10.3 mm |
||||||||||||||||
Toshiba |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
100 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
16 words |
5 |
4 |
SMALL OUTLINE |
1.27 mm |
85 Cel |
3-STATE |
16X4 |
16 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
6 V |
1.9 mm |
5.3 mm |
Not Qualified |
64 bit |
2 V |
e0 |
YES |
10.3 mm |
|||||||||||||||||
|
Toshiba |
OTHER FIFO |
INDUSTRIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
ASYNCHRONOUS |
16 words |
2/6 |
4 |
SMALL OUTLINE |
SOP16,.3 |
FIFOs |
1.27 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDSO-G16 |
12 MHz |
Not Qualified |
|||||||||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
6.1 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
14 mm |
15 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G128 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
20 mm |
10 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
4608 bit |
4.5 V |
YES |
14 mm |
15 ns |
||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
18 |
GRID ARRAY |
1.27 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
BOTTOM |
S-PBGA-B121 |
5.5 V |
3.5 mm |
15 mm |
4608 bit |
4.5 V |
30 |
260 |
YES |
15 mm |
10 ns |
|||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
10 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
10 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
56 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
125 mA |
256 words |
5 |
5 |
9 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP56,.3,20 |
FIFOs |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDSO-G56 |
1 |
5.5 V |
1.2 mm |
40 MHz |
6.1 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
30 |
260 |
NO |
.015 Amp |
14 mm |
15 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
QUAD |
R-PQFP-G128 |
5.5 V |
1.6 mm |
14 mm |
4608 bit |
4.5 V |
30 |
260 |
YES |
20 mm |
10 ns |
|||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
14 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
15 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
14 mm |
4608 bit |
4.5 V |
YES |
14 mm |
10 ns |
||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
512 words |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
4608 bit |
4.5 V |
YES |
10 mm |
15 ns |
||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
2304 bit |
4.5 V |
YES |
10 mm |
10 ns |
||||||||||||||||||
Renesas Electronics |
INDUSTRIAL |
56 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
256 words |
5 |
9 |
SMALL OUTLINE |
85 Cel |
256X9 |
256 |
-40 Cel |
DUAL |
R-PDSO-G56 |
5.5 V |
2304 bit |
4.5 V |
NO |
15 ns |
||||||||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
256 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.01 Amp |
10 mm |
10 ns |
||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
SYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
18 |
GRID ARRAY |
BGA121,11X11,50 |
FIFOs |
1.27 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B121 |
66.7 MHz |
Not Qualified |
9216 bit |
e0 |
.01 Amp |
10 ns |
|||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
256 words |
5 |
5 |
18 |
GRID ARRAY |
BGA121,11X11,50 |
FIFOs |
1.27 mm |
85 Cel |
256X18 |
256 |
-40 Cel |
MATTE TIN |
BOTTOM |
S-PBGA-B121 |
5.5 V |
3.5 mm |
66.7 MHz |
15 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
YES |
.01 Amp |
15 mm |
10 ns |
||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
1024 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
1KX18 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
4096 words |
5 |
18 |
85 Cel |
4KX18 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
73728 bit |
4.5 V |
e3 |
YES |
.005 Amp |
10 ns |
||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
DUAL |
R-XDIP-T28 |
40 MHz |
Not Qualified |
73728 bit |
.012 Amp |
15 ns |
|||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
9 |
85 Cel |
3-STATE |
512X9 |
512 |
-40 Cel |
QUAD |
R-PQFP-G32 |
5.5 V |
4608 bit |
4.5 V |
YES |
.005 Amp |
15 ns |
|||||||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
FIFOs |
85 Cel |
3-STATE |
8KX9 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
28.5 MHz |
Not Qualified |
73728 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
25 ns |
||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
2048 words |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
18432 bit |
4.5 V |
YES |
10 mm |
15 ns |
||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
8192 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
50 MHz |
14 mm |
Not Qualified |
147456 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
14 mm |
12 ns |
|||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
65536 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA256,16X16,40 |
FIFOs |
1 mm |
85 Cel |
64KX36 |
64K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
3.5 mm |
133 MHz |
17 mm |
Not Qualified |
2359296 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT |
e0 |
30 |
225 |
YES |
.01 Amp |
17 mm |
4 ns |
||||||
Renesas Electronics |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
32768 words |
5 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
32KX18 |
32K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
10 mm |
589824 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
YES |
10 mm |
10 ns |
|||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
324 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
130 mA |
32768 words |
2.5 |
2.5 |
72 |
GRID ARRAY |
BGA324,18X18,40 |
FIFOs |
1 mm |
85 Cel |
32KX72 |
32K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B324 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
2359296 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
YES |
.02 Amp |
19 mm |
3.6 ns |
|||||||
|
Renesas Electronics |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
6.7 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
262144 words |
2.5 |
18 |
GRID ARRAY |
1 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
19 mm |
Not Qualified |
4718592 bit |
2.375 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e1 |
YES |
19 mm |
3.8 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
5 |
9 |
FIFOs |
85 Cel |
3-STATE |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PLCC-J32 |
3 |
5.5 V |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
|||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
8192 words |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
QUAD |
S-PQFP-G64 |
5.5 V |
1.6 mm |
50 MHz |
14 mm |
147456 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
YES |
.02 Amp |
14 mm |
12 ns |
|||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
80 mA |
16384 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX18 |
16K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
294912 bit |
4 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
121 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
2 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
1024 words |
5 |
18 |
GRID ARRAY |
1.27 mm |
85 Cel |
1KX18 |
1K |
-40 Cel |
BOTTOM |
S-PBGA-B121 |
5.5 V |
3.5 mm |
15 mm |
18432 bit |
4.5 V |
30 |
260 |
YES |
15 mm |
10 ns |
|||||||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
512 words |
5 |
5 |
18 |
FIFOs |
85 Cel |
512X18 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G64 |
3 |
5.5 V |
Not Qualified |
9216 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
15 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
256 words |
5 |
5 |
9 |
FIFOs |
85 Cel |
3-STATE |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G32 |
3 |
5.5 V |
Not Qualified |
2304 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
10 ns |
|||||||||||||
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
230 mA |
512 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512X18 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
14 mm |
Not Qualified |
9216 bit |
4.5 V |
BYPASS REGISTER |
e0 |
30 |
240 |
YES |
.23 Amp |
14 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
75 mA |
16384 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
16KX9 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
147456 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
|||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
131072 words |
2.5 |
1.5/2.5,2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
4718592 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.01 Amp |
19 mm |
3.6 ns |
||||||
Renesas Electronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
65 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
32768 words |
5 |
9 |
IN-LINE |
85 Cel |
32KX9 |
32K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
294912 bit |
4.5 V |
e0 |
NO |
50 ns |
||||||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
100 mA |
65536 words |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA256,16X16,40 |
9 |
FIFOs |
1 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
Tin/Lead (Sn63Pb37) |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
133 MHz |
Not Qualified |
1179648 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH:9-BIT |
e0 |
30 |
225 |
YES |
.01 Amp |
4 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.