Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
32768 words |
3.3 |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP128,.63X.87,20 |
FIFOs |
.5 mm |
85 Cel |
32KX36 |
32K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
1179648 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e3 |
30 |
260 |
YES |
.015 Amp |
20 mm |
10 ns |
|||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
2048 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
14 mm |
Not Qualified |
18432 bit |
4.5 V |
e0 |
30 |
240 |
YES |
.01 Amp |
14 mm |
15 ns |
|||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
35 mA |
1024 words |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA100,10X10,40 |
9 |
FIFOs |
1 mm |
85 Cel |
1KX18 |
1K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
133.3 MHz |
11 mm |
Not Qualified |
18432 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
30 |
260 |
YES |
.015 Amp |
11 mm |
5 ns |
||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.5 mm |
66.7 MHz |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
13.97 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
35 mA |
2048 words |
3.3 |
3.3 |
18 |
GRID ARRAY |
BGA100,10X10,40 |
9 |
FIFOs |
1 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
S-PBGA-B100 |
3 |
3.45 V |
1.5 mm |
133.3 MHz |
11 mm |
Not Qualified |
36864 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
30 |
260 |
YES |
.015 Amp |
11 mm |
5 ns |
||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
65536 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
64KX9 |
64K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
589824 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
40 |
260 |
YES |
14 mm |
10 ns |
||||||||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
9 |
IN-LINE |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
1 |
5.5 V |
40 MHz |
18432 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
15 ns |
|||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
40 mA |
131072 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA144,12X12,40 |
FIFOs |
1 mm |
85 Cel |
128KX36 |
128K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
133.3 MHz |
13 mm |
Not Qualified |
4718592 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e1 |
40 |
260 |
YES |
.015 Amp |
13 mm |
5 ns |
|||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
25 ns |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
.005 Amp |
13.97 mm |
15 ns |
||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
NO LEAD |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-N32 |
40 MHz |
Not Qualified |
e0 |
.005 Amp |
15 ns |
||||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
40 MHz |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
e0 |
NO |
.005 Amp |
37.1475 mm |
15 ns |
|||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-XDIP-T28 |
28.5 MHz |
Not Qualified |
e0 |
.005 Amp |
25 ns |
||||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
128KX18 |
128K |
-40 Cel |
QUAD |
S-PQFP-G80 |
3.45 V |
1.6 mm |
14 mm |
2359296 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE |
YES |
14 mm |
6.5 ns |
|||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
LFQFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
36 |
FLATPACK, LOW PROFILE, FINE PITCH |
.5 mm |
85 Cel |
4KX36 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQFP-G128 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
3.15 V |
e3 |
YES |
20 mm |
5 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LFQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE, FINE PITCH |
QFP64,.47SQ,20 |
FIFOs |
.5 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
10 mm |
Not Qualified |
1179648 bit |
3 V |
e3 |
30 |
260 |
YES |
.02 Amp |
10 mm |
10 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
128 |
QFP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
36 |
FLATPACK |
85 Cel |
128KX36 |
128K |
-40 Cel |
QUAD |
R-PQFP-G128 |
3.45 V |
4718592 bit |
3.15 V |
RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
NOT SPECIFIED |
NOT SPECIFIED |
YES |
5 ns |
||||||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4096 words |
3.3 |
32 |
GRID ARRAY |
1 mm |
85 Cel |
4KX32 |
4K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
13 mm |
Not Qualified |
131072 bit |
3.15 V |
e1 |
YES |
13 mm |
6.5 ns |
|||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
32768 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
32KX9 |
32K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
294912 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
CERAMIC, METAL-SEALED COFIRED |
YES |
35 ns |
1 |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
80 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-CQCC-N32 |
5.5 V |
3.048 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
YES |
13.97 mm |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCN |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
CMOS |
NO LEAD |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LCC32,.45X.55 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-N32 |
28.5 MHz |
Not Qualified |
9216 bit |
e3 |
NO |
.005 Amp |
25 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
8192 words |
5 |
18 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
8KX18 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
147456 bit |
4.5 V |
RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH |
e3 |
40 |
260 |
YES |
14 mm |
12 ns |
||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
60 mA |
2048 words |
5 |
5 |
18 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
2KX18 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
40 MHz |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
14 mm |
15 ns |
||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
16 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
16 words |
5/15 |
4 |
IN-LINE |
DIP16,.3 |
FIFOs |
2.54 mm |
85 Cel |
16X4 |
16 |
-40 Cel |
DUAL |
R-PDIP-T16 |
1.5 MHz |
Not Qualified |
||||||||||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
240 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
60 mA |
262144 words |
2.5 |
1.5/2.5,2.5 |
36 |
GRID ARRAY |
BGA240,18X18,40 |
FIFOs |
1 mm |
85 Cel |
256KX36 |
256K |
-40 Cel |
TIN LEAD |
BOTTOM |
S-PBGA-B240 |
3 |
2.625 V |
1.97 mm |
200 MHz |
19 mm |
Not Qualified |
9437184 bit |
2.375 V |
ASYNCHRONOUS OPERATION ALSO POSSIBLE |
e0 |
30 |
225 |
YES |
.01 Amp |
19 mm |
3.6 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
2 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
4096 words |
5 |
9 |
FLATPACK, LOW PROFILE |
.8 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G64 |
3 |
5.5 V |
1.6 mm |
14 mm |
Not Qualified |
36864 bit |
4.5 V |
e3 |
40 |
260 |
YES |
14 mm |
15 ns |
|||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
256 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
28.5 MHz |
7.62 mm |
Not Qualified |
2304 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
.005 Amp |
34.671 mm |
25 ns |
||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
40 mA |
16384 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA144,12X12,40 |
FIFOs |
1 mm |
85 Cel |
16KX36 |
16K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
133.3 MHz |
13 mm |
Not Qualified |
589824 bit |
3.15 V |
e1 |
40 |
260 |
YES |
.015 Amp |
13 mm |
5 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
1024 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3.6 V |
3.55 mm |
11.4554 mm |
Not Qualified |
9216 bit |
3 V |
e3 |
YES |
13.9954 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
256 words |
3.3 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
3.6 V |
3.55 mm |
11.4554 mm |
Not Qualified |
2304 bit |
3 V |
e3 |
YES |
13.9954 mm |
10 ns |
||||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
8KX9 |
8K |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.556 mm |
11.4554 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
13.9954 mm |
25 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
256 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
QUAD |
R-PQCC-J32 |
5.5 V |
3.55 mm |
11.43 mm |
Not Qualified |
2304 bit |
4.5 V |
e3 |
YES |
13.97 mm |
15 ns |
||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
55 mA |
16384 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.66SQ,32 |
FIFOs |
.8 mm |
85 Cel |
16KX9 |
16K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
147456 bit |
3 V |
RETRANSMIT |
e3 |
30 |
260 |
YES |
.02 Amp |
14 mm |
10 ns |
|||||
|
Renesas Electronics |
INDUSTRIAL |
256 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
65536 words |
3.3 |
18 |
GRID ARRAY |
1 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B256 |
3 |
3.45 V |
3.5 mm |
17 mm |
Not Qualified |
1179648 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH:9-BIT |
e1 |
YES |
17 mm |
4 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
80 |
QFP |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
65536 words |
3.3 |
3.3 |
18 |
FLATPACK |
QFP80,.64SQ |
9 |
FIFOs |
.65 mm |
85 Cel |
64KX18 |
64K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
133.3 MHz |
14 mm |
Not Qualified |
1179648 bit |
3.15 V |
IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE |
e3 |
30 |
260 |
YES |
.015 Amp |
14 mm |
5 ns |
||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOP28,.5 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDSO-G28 |
3 |
5.5 V |
3.048 mm |
40 MHz |
8.763 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
260 |
NO |
.005 Amp |
18.3642 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.5 mm |
40 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
13.97 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.5 mm |
40 MHz |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
13.97 mm |
15 ns |
||||||
|
Renesas Electronics |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
IN-LINE |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
MATTE TIN |
DUAL |
R-PDIP-T28 |
5.5 V |
4.572 mm |
7.62 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e3 |
NO |
34.671 mm |
15 ns |
|||||||||||||||
|
Renesas Electronics |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
262144 words |
3.3 |
18 |
FLATPACK, LOW PROFILE |
.65 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
MATTE TIN |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE |
e3 |
YES |
14 mm |
6.5 ns |
||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
80 mA |
256 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
MATTE TIN |
DUAL |
R-XDIP-T28 |
40 MHz |
Not Qualified |
e3 |
.005 Amp |
15 ns |
|||||||||||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
32 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
512 words |
5 |
5 |
9 |
FLATPACK, LOW PROFILE |
QFP32,.35SQ,32 |
FIFOs |
.8 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G32 |
3 |
5.5 V |
1.6 mm |
40 MHz |
7 mm |
Not Qualified |
4608 bit |
4.5 V |
e3 |
30 |
260 |
YES |
.005 Amp |
7 mm |
15 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
100 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
131072 words |
3.3 |
18 |
GRID ARRAY |
85 Cel |
128KX18 |
128K |
-40 Cel |
BOTTOM |
S-PBGA-B100 |
3.45 V |
2359296 bit |
3.15 V |
AUTO POWER DOWN; RETRANSMIT; IT CAN ALSO BE CONFIGURED AS 256K X 9; ASYNCHRONOUS MODE ALSO POSSIBLE |
YES |
5 ns |
|||||||||||||||||||||
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC, GLASS-SEALED |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
80 mA |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
DUAL |
R-GDIP-T28 |
5.5 V |
5.08 mm |
28.5 MHz |
15.24 mm |
Not Qualified |
9216 bit |
4.5 V |
e0 |
NO |
.005 Amp |
37.211 mm |
25 ns |
||||||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
80 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
10 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
35 mA |
262144 words |
3.3 |
3.3 |
18 |
FLATPACK, LOW PROFILE |
QFP80,.64SQ |
9 |
FIFOs |
.65 mm |
85 Cel |
256KX18 |
256K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G80 |
3 |
3.45 V |
1.6 mm |
100 MHz |
14 mm |
Not Qualified |
4718592 bit |
3.15 V |
ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE |
e3 |
30 |
260 |
YES |
.015 Amp |
14 mm |
6.5 ns |
||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
64 |
LQFP |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
GULL WING |
PARALLEL |
SYNCHRONOUS |
40 mA |
256 words |
3.3 |
3.3 |
9 |
FLATPACK, LOW PROFILE |
QFP64,.63SQ,32 |
FIFOs |
.8 mm |
85 Cel |
256X9 |
256 |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
S-PQFP-G64 |
3 |
3.6 V |
1.6 mm |
66.7 MHz |
14 mm |
Not Qualified |
2304 bit |
3 V |
e3 |
30 |
260 |
YES |
.01 Amp |
14 mm |
10 ns |
||||||
|
Renesas Electronics |
OTHER FIFO |
INDUSTRIAL |
144 |
BGA |
SQUARE |
PLASTIC/EPOXY |
YES |
7.5 ns |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
40 mA |
1024 words |
3.3 |
3.3 |
36 |
GRID ARRAY |
BGA144,12X12,40 |
FIFOs |
1 mm |
85 Cel |
1KX36 |
1K |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
S-PBGA-B144 |
3 |
3.45 V |
1.97 mm |
133.3 MHz |
13 mm |
Not Qualified |
36864 bit |
3.15 V |
e1 |
40 |
260 |
YES |
.015 Amp |
13 mm |
5 ns |
||||||
|
Renesas Electronics |
BI-DIRECTIONAL FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
3-STATE |
2KX9 |
2K |
-40 Cel |
Matte Tin (Sn) - annealed |
QUAD |
R-PQCC-J32 |
3 |
5.5 V |
3.556 mm |
28.5 MHz |
11.4554 mm |
Not Qualified |
18432 bit |
4.5 V |
e3 |
30 |
260 |
NO |
.012 Amp |
13.9954 mm |
25 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.