INDUSTRIAL FIFO 1,726

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Package Shape Total Dose (V) Package Body Material Surface Mount Cycle Time No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Output Characteristics Organization No. of Words Code Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

7200L25TPGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

35 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

256 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

85 Cel

256X9

256

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

4.572 mm

28.5 MHz

7.62 mm

Not Qualified

2304 bit

4.5 V

RETRANSMIT

e3

NO

.005 Amp

34.671 mm

25 ns

72V3660L7-5BBGI8

Renesas Electronics

INDUSTRIAL

144

BGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

4096 words

3.3

36

GRID ARRAY

1 mm

85 Cel

4KX36

4K

-40 Cel

BOTTOM

S-PBGA-B144

3.45 V

1.97 mm

13 mm

147456 bit

3.15 V

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

NOT SPECIFIED

NOT SPECIFIED

YES

13 mm

5 ns

IDT72V245L15PFGI

Renesas Electronics

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

18

FLATPACK

85 Cel

4KX18

4K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G64

3

3.6 V

Not Qualified

73728 bit

3 V

e3

40

260

YES

10 ns

IDT72V15165L15TFGI

Renesas Electronics

INDUSTRIAL

64

LFQFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

16

FLATPACK, LOW PROFILE, FINE PITCH

.5 mm

85 Cel

4KX16

4K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G64

3.6 V

1.6 mm

10 mm

Not Qualified

65536 bit

3 V

e3

YES

10 mm

10 ns

IDT72235LB25PFGI8

Renesas Electronics

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

25 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2048 words

5

18

FLATPACK, LOW PROFILE

.8 mm

85 Cel

2KX18

2K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

36864 bit

4.5 V

e3

40

260

YES

14 mm

15 ns

IDT72V02L25JGI8

Renesas Electronics

OTHER FIFO

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

35 ns

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

60 mA

1024 words

3.3

3.3

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

85 Cel

3-STATE

1KX9

1K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

28.5 MHz

11.43 mm

Not Qualified

9216 bit

3 V

e3

30

260

NO

.005 Amp

13.97 mm

25 ns

72V2103L7-5BCGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

100

BGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

131072 words

3.3

18

GRID ARRAY

85 Cel

128KX18

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B100

3

3.45 V

2359296 bit

3.15 V

AUTO POWER DOWN; RETRANSMIT; IT CAN ALSO BE CONFIGURED AS 256K X 9; ASYNCHRONOUS MODE ALSO POSSIBLE

e1

30

260

YES

5 ns

IDT72V253L10PFI

Renesas Electronics

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

10 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

4096 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

4KX18

4K

-40 Cel

TIN LEAD

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

14 mm

Not Qualified

73728 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 8K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e0

YES

14 mm

6.5 ns

72V273L7-5PFGI8

Renesas Electronics

OTHER FIFO

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

35 mA

16384 words

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP80,.64SQ

9

FIFOs

.65 mm

85 Cel

16KX18

16K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

133.3 MHz

14 mm

Not Qualified

294912 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e3

30

260

YES

.015 Amp

14 mm

5 ns

IDT72V3650L7-5BBGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

144

BGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

40 mA

2048 words

3.3

3.3

36

GRID ARRAY

BGA144,12X12,40

FIFOs

1 mm

85 Cel

2KX36

2K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B144

3

3.45 V

1.97 mm

133.3 MHz

13 mm

Not Qualified

73728 bit

3.15 V

e1

40

260

YES

.015 Amp

13 mm

5 ns

7202LA20PI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

30 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

100 mA

1024 words

5

9

IN-LINE

2.54 mm

85 Cel

1KX9

1K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

5.5 V

4.699 mm

15.24 mm

Not Qualified

9216 bit

4.5 V

e0

NO

36.576 mm

20 ns

IDT72V36110L7-5BBGI8

Renesas Electronics

OTHER FIFO

INDUSTRIAL

144

BGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

40 mA

131072 words

3.3

3.3

36

GRID ARRAY

BGA144,12X12,40

FIFOs

1 mm

85 Cel

128KX36

128K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B144

3

3.45 V

1.97 mm

133.3 MHz

13 mm

Not Qualified

4718592 bit

3.15 V

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e1

40

260

YES

.015 Amp

13 mm

5 ns

IDT72V243L10PFI

Renesas Electronics

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

10 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

2048 words

3.3

18

FLATPACK, LOW PROFILE

.65 mm

85 Cel

2KX18

2K

-40 Cel

TIN LEAD

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

14 mm

Not Qualified

36864 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 4K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e0

YES

14 mm

6.5 ns

72V3670L15PFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

128

LFQFP

RECTANGULAR

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

40 mA

8192 words

3.3

3.3

36

FLATPACK, LOW PROFILE, FINE PITCH

QFP128,.63X.87,20

FIFOs

.5 mm

85 Cel

8KX36

8K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G128

3

3.45 V

1.6 mm

66.7 MHz

14 mm

Not Qualified

294912 bit

3.15 V

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e3

30

260

YES

.015 Amp

20 mm

10 ns

IDT72V223L39268BCGI

Renesas Electronics

INDUSTRIAL

100

LBGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

512 words

3.3

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

512X18

512

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B100

3

3.45 V

1.5 mm

11 mm

Not Qualified

9216 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 1K X 9

e1

YES

11 mm

5 ns

IDT7202LA25TPGI

Renesas Electronics

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

35 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

1024 words

5

9

IN-LINE

2.54 mm

85 Cel

1KX9

1K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

4.572 mm

7.62 mm

Not Qualified

9216 bit

4.5 V

RETRANSMIT

e3

NO

34.671 mm

25 ns

72V04L25JGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

35 ns

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

4096 words

3.3

9

CHIP CARRIER

1.27 mm

85 Cel

4KX9

4K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQCC-J32

3

3.6 V

3.55 mm

11.43 mm

Not Qualified

36864 bit

3 V

RETRANSMIT

e3

30

260

NO

13.97 mm

25 ns

72V235L15PFGI8

Renesas Electronics

OTHER FIFO

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

30 mA

2048 words

3.3

3.3

18

FLATPACK

QFP64,.63SQ,32

FIFOs

.8 mm

85 Cel

2KX18

2K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G64

3

3.6 V

66.7 MHz

Not Qualified

36864 bit

3 V

e3

YES

.005 Amp

10 ns

72V283L10PFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

10 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

35 mA

32768 words

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP80,.64SQ

9

FIFOs

.65 mm

85 Cel

32KX18

32K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

100 MHz

14 mm

Not Qualified

589824 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 64K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e3

30

260

YES

.015 Amp

14 mm

6.5 ns

IDT72265LA15TFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

64

LFQFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

80 mA

16384 words

5

5

18

FLATPACK, LOW PROFILE, FINE PITCH

QFP64,.47SQ,20

FIFOs

.5 mm

85 Cel

16KX18

16K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQFP-G64

3

5.5 V

1.6 mm

66.7 MHz

10 mm

Not Qualified

294912 bit

4 V

e3

30

260

YES

.02 Amp

10 mm

10 ns

IDT72V12081L15PFGI

Renesas Electronics

INDUSTRIAL

32

LQFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

1024 words

3.3

8

FLATPACK, LOW PROFILE

.8 mm

85 Cel

1KX8

1K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G32

3

3.6 V

1.6 mm

7 mm

Not Qualified

8192 bit

3 V

e3

YES

7 mm

10 ns

IDT72V201L15PFGI

Renesas Electronics

INDUSTRIAL

32

LQFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

256 words

3.3

9

FLATPACK, LOW PROFILE

.8 mm

85 Cel

256X9

256

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQFP-G32

3

3.6 V

1.6 mm

7 mm

Not Qualified

2304 bit

3 V

e3

30

260

YES

7 mm

10 ns

IDT72V243L39268BCGI

Renesas Electronics

INDUSTRIAL

100

LBGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

2048 words

3.3

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

2KX18

2K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B100

3

3.45 V

1.5 mm

11 mm

Not Qualified

36864 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 4K X 9

e1

YES

11 mm

5 ns

IDT72V205L15TFGI

Renesas Electronics

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

256 words

3.3

18

FLATPACK

.5 mm

85 Cel

256X18

256

-40 Cel

Matte Tin (Sn)

QUAD

S-PQFP-G64

3

3.6 V

1.6 mm

10 mm

Not Qualified

4608 bit

3 V

e3

30

260

YES

10 mm

10 ns

72V293L7-5PFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

35 mA

65536 words

3.3

3.3

18

FLATPACK, LOW PROFILE

QFP80,.64SQ

9

FIFOs

.65 mm

85 Cel

64KX18

64K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

133.3 MHz

14 mm

Not Qualified

1179648 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e3

30

260

YES

.015 Amp

14 mm

5 ns

IDT72T7295L5BBGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

324

BGA

SQUARE

PLASTIC/EPOXY

YES

5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

130 mA

32768 words

2.5

2.5

72

GRID ARRAY

BGA324,18X18,40

FIFOs

1 mm

85 Cel

32KX72

32K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B324

3

2.625 V

1.97 mm

200 MHz

19 mm

Not Qualified

2359296 bit

2.375 V

ASYNCHRONOUS OPERATION ALSO POSSIBLE

e1

YES

.02 Amp

19 mm

3.6 ns

72V831L15PFGI

Renesas Electronics

BI-DIRECTIONAL FIFO

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

40 mA

2048 words

3.3

3.3

9

FLATPACK, LOW PROFILE

QFP64,.63SQ,32

FIFOs

.8 mm

85 Cel

2KX9

2K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQFP-G64

3

3.6 V

1.6 mm

66.7 MHz

14 mm

Not Qualified

18432 bit

3 V

e3

30

260

YES

.01 Amp

14 mm

10 ns

IDT7280L15PAGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

56

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

25 ns

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

125 mA

256 words

5

5

9

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP56,.3,20

FIFOs

.5 mm

85 Cel

256X9

256

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G56

1

5.5 V

1.2 mm

40 MHz

6.1 mm

Not Qualified

2304 bit

4.5 V

RETRANSMIT

e3

30

260

NO

.015 Amp

14 mm

15 ns

72V283L7-5BCGI8

Renesas Electronics

INDUSTRIAL

100

LBGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

32768 words

3.3

18

GRID ARRAY, LOW PROFILE

1 mm

85 Cel

32KX18

32K

-40 Cel

BOTTOM

S-PBGA-B100

3.45 V

1.5 mm

11 mm

589824 bit

3.15 V

IT CAN ALSO BE CONFIGURED AS 64K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE

NOT SPECIFIED

NOT SPECIFIED

YES

11 mm

5 ns

IDT72T7285L5BBI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

324

BGA

SQUARE

PLASTIC/EPOXY

YES

5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

60 mA

16384 words

2.5

2.5

72

GRID ARRAY

BGA324,18X18,40

FIFOs

1 mm

85 Cel

16KX72

16K

-40 Cel

TIN LEAD

BOTTOM

S-PBGA-B324

3

2.625 V

1.97 mm

200 MHz

19 mm

Not Qualified

1179648 bit

2.375 V

ASYNCHRONOUS OPERATION ALSO POSSIBLE

e0

30

225

YES

.05 Amp

19 mm

3.6 ns

7200L15TDI8

Renesas Electronics

OTHER FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC, METAL-SEALED COFIRED

NO

25 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

80 mA

256 words

5

5

9

IN-LINE

DIP28,.3

FIFOs

2.54 mm

85 Cel

256X9

256

-40 Cel

TIN LEAD

DUAL

R-CDIP-T28

5.5 V

40 MHz

Not Qualified

2304 bit

4.5 V

e0

NO

.005 Amp

15 ns

IDT72V2113L7-5BCGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

100

LBGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

35 mA

262144 words

3.3

3.3

18

GRID ARRAY, LOW PROFILE

BGA100,10X10,40

9

FIFOs

1 mm

85 Cel

256KX18

256K

-40 Cel

Tin/Silver/Copper (Sn/Ag/Cu)

BOTTOM

S-PBGA-B100

3

3.45 V

1.5 mm

133.3 MHz

11 mm

Not Qualified

4718592 bit

3.15 V

ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE

e1

30

260

YES

.015 Amp

11 mm

5 ns

IDT72235LB15JGI8

Renesas Electronics

INDUSTRIAL

68

QCCJ

SQUARE

PLASTIC/EPOXY

YES

15 ns

1

CMOS

J BEND

PARALLEL

SYNCHRONOUS

2048 words

5

18

CHIP CARRIER

1.27 mm

85 Cel

2KX18

2K

-40 Cel

MATTE TIN

QUAD

S-PQCC-J68

5.5 V

4.572 mm

24.2062 mm

Not Qualified

36864 bit

4.5 V

e3

YES

24.2062 mm

10 ns

IDT72241L15JGI8

Renesas Electronics

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

15 ns

1

CMOS

J BEND

PARALLEL

SYNCHRONOUS

4096 words

5

9

CHIP CARRIER

1.27 mm

85 Cel

4KX9

4K

-40 Cel

MATTE TIN

QUAD

R-PQCC-J32

5.5 V

3.55 mm

11.43 mm

Not Qualified

36864 bit

4.5 V

e3

YES

13.97 mm

10 ns

IDT72V16160L10PFGI

Renesas Electronics

INDUSTRIAL

80

LQFP

SQUARE

PLASTIC/EPOXY

YES

10 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

8192 words

3.3

16

FLATPACK, LOW PROFILE

.65 mm

85 Cel

8KX16

8K

-40 Cel

MATTE TIN

QUAD

S-PQFP-G80

3

3.45 V

1.6 mm

14 mm

Not Qualified

131072 bit

3.15 V

e3

YES

14 mm

6.5 ns

IDT72V36100L7.5BBGI

Renesas Electronics

INDUSTRIAL

144

BGA

SQUARE

PLASTIC/EPOXY

YES

7.5 ns

1

CMOS

BALL

PARALLEL

SYNCHRONOUS

65536 words

3.3

36

GRID ARRAY

1 mm

85 Cel

64KX36

64K

-40 Cel

TIN SILVER COPPER

BOTTOM

S-PBGA-B144

3

3.45 V

1.97 mm

13 mm

Not Qualified

2359296 bit

3.15 V

e1

YES

13 mm

5 ns

7203L25TPGI

Renesas Electronics

BI-DIRECTIONAL FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

35 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

5

5

9

IN-LINE

FIFOs

85 Cel

3-STATE

2KX9

2K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

28.5 MHz

Not Qualified

18432 bit

4.5 V

e3

NO

.012 Amp

25 ns

IDT72255LA20PFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

20 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

80 mA

8192 words

5

5

18

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

FIFOs

.8 mm

85 Cel

8KX18

8K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

S-PQFP-G64

3

5.5 V

1.6 mm

50 MHz

14 mm

Not Qualified

147456 bit

4 V

RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH

e3

30

260

YES

.02 Amp

14 mm

12 ns

7204L25DGI

Renesas Electronics

BI-DIRECTIONAL FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

35 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

4096 words

5

5

9

IN-LINE

FIFOs

85 Cel

3-STATE

4KX9

4K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

28.5 MHz

Not Qualified

36864 bit

4.5 V

e3

NO

.012 Amp

25 ns

7203L15TDGI

Renesas Electronics

BI-DIRECTIONAL FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

25 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

5

5

9

IN-LINE

FIFOs

85 Cel

3-STATE

2KX9

2K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

40 MHz

Not Qualified

18432 bit

4.5 V

e3

NO

.012 Amp

15 ns

IDT7204L15DGI

Renesas Electronics

INDUSTRIAL

28

DIP

RECTANGULAR

CERAMIC, GLASS-SEALED

NO

25 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

4096 words

5

9

IN-LINE

2.54 mm

85 Cel

4KX9

4K

-40 Cel

MATTE TIN

DUAL

R-GDIP-T28

5.5 V

5.08 mm

15.24 mm

Not Qualified

36864 bit

4.5 V

e3

NO

37.211 mm

15 ns

IDT7206L25PGI

Renesas Electronics

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

35 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

16384 words

5

9

IN-LINE

2.54 mm

85 Cel

16KX9

16K

-40 Cel

MATTE TIN

DUAL

R-PDIP-T28

5.5 V

4.699 mm

15.24 mm

Not Qualified

147456 bit

4.5 V

RETRANSMIT

e3

NO

36.576 mm

25 ns

72V3650L15PFGI

Renesas Electronics

OTHER FIFO

INDUSTRIAL

128

LFQFP

RECTANGULAR

PLASTIC/EPOXY

YES

15 ns

1

CMOS

GULL WING

PARALLEL

SYNCHRONOUS

40 mA

2048 words

3.3

3.3

36

FLATPACK, LOW PROFILE, FINE PITCH

QFP128,.63X.87,20

FIFOs

.5 mm

85 Cel

2KX36

2K

-40 Cel

Matte Tin (Sn) - annealed

QUAD

R-PQFP-G128

3

3.45 V

1.6 mm

66.7 MHz

14 mm

Not Qualified

73728 bit

3.15 V

RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE

e3

30

260

YES

.015 Amp

20 mm

10 ns

7203L15TPGI8

Renesas Electronics

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

25 ns

1

CMOS

THROUGH-HOLE

PARALLEL

ASYNCHRONOUS

2048 words

5

9

IN-LINE

85 Cel

2KX9

2K

-40 Cel

DUAL

R-PDIP-T28

5.5 V

18432 bit

4.5 V

RETRANSMIT

NO

15 ns

KM75C103AJI-20

Samsung

OTHER FIFO

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

ASYNCHRONOUS

60 mA

2048 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

85 Cel

2KX9

2K

-40 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

40 MHz

Not Qualified

18432 bit

e0

.005 Amp

20 ns

KM75C03AJI-35

Samsung

OTHER FIFO

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

ASYNCHRONOUS

60 mA

2048 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

85 Cel

2KX9

2K

-40 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

22 MHz

Not Qualified

18432 bit

e0

.005 Amp

35 ns

KM75C104API-25

Samsung

OTHER FIFO

INDUSTRIAL

28

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

CMOS

THROUGH-HOLE

ASYNCHRONOUS

120 mA

4096 words

5

5

9

IN-LINE

DIP28,.6

FIFOs

2.54 mm

85 Cel

4KX9

4K

-40 Cel

TIN LEAD

DUAL

R-PDIP-T28

3

28.6 MHz

Not Qualified

36864 bit

e0

.005 Amp

25 ns

KM75C03AJI-80

Samsung

OTHER FIFO

INDUSTRIAL

32

QCCJ

RECTANGULAR

PLASTIC/EPOXY

YES

CMOS

J BEND

ASYNCHRONOUS

60 mA

2048 words

5

5

9

CHIP CARRIER

LDCC32,.5X.6

FIFOs

1.27 mm

85 Cel

2KX9

2K

-40 Cel

TIN LEAD

QUAD

R-PQCC-J32

3

10 MHz

Not Qualified

18432 bit

e0

.005 Amp

80 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.