Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Total Dose (V) | Package Body Material | Surface Mount | Cycle Time | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Maximum Supply Current | No. of Words | Nominal Supply Voltage / Vsup (V) | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Terminal Pitch | Maximum Operating Temperature | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | Terminal Finish | Terminal Position | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Maximum Clock Frequency (fCLK) | Width | Qualification | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Output Enable | Maximum Standby Current | Length | Maximum Access Time |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Micron Technology |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.67 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
18.44 mm |
15 ns |
|||||||||||||||
Micron Technology |
OTHER FIFO |
AUTOMOTIVE |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
100 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
28.57 MHz |
Not Qualified |
e0 |
.005 Amp |
25 ns |
||||||||||||||||||||
Micron Technology |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
AUTOMOTIVE |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
45 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
4KX9 |
4K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
22.2 MHz |
7.62 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
35 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
140 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
33.3 MHz |
7.62 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
20 ns |
||||||||||
Micron Technology |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
2048 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||||
Micron Technology |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.67 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
18.44 mm |
25 ns |
|||||||||||||||
Micron Technology |
AUTOMOTIVE |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
2048 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
125 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
25 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
512X9 |
512 |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
e0 |
40 ns |
|||||||||||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
130 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
33.3 MHz |
11.43 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
20 ns |
||||||||||
Micron Technology |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
4096 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
4KX9 |
4K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
2KX9 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
18432 bit |
e0 |
30 ns |
||||||||||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
1024 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||||||
Micron Technology |
OTHER FIFO |
AUTOMOTIVE |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
SYNCHRONOUS |
200 mA |
512 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
125 Cel |
512X18 |
512 |
-40 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J68 |
28.6 MHz |
Not Qualified |
9216 bit |
e0 |
.005 Amp |
35 ns |
|||||||||||||||||||
Micron Technology |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.67 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
18.44 mm |
35 ns |
|||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
150 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
40 MHz |
7.62 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
15 ns |
||||||||||
Micron Technology |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
48 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
2048 words |
5 |
5 |
16 |
IN-LINE |
DIP48(UNSPEC) |
FIFOs |
2.54 mm |
70 Cel |
2KX16 |
2K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T48 |
Not Qualified |
32768 bit |
e0 |
30 ns |
||||||||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
140 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
7.62 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
15 ns |
|||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
100 mA |
1024 words |
5 |
5 |
9 |
SMALL OUTLINE |
SOJ28,.34 |
FIFOs |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
22.2 MHz |
7.67 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
18.44 mm |
35 ns |
||||||||
Micron Technology |
OTHER FIFO |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
1KX9 |
1K |
TIN LEAD |
DUAL |
R-PDIP-T28 |
Not Qualified |
9216 bit |
e0 |
30 ns |
|||||||||||||||||||||||||
Micron Technology |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
25 ns |
|||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
35 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
7.62 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
25 ns |
|||||||||||
Micron Technology |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
85 Cel |
1KX9 |
1K |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
110 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
35 ns |
|||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
25 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
150 mA |
4096 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
4KX9 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
40 MHz |
7.62 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
15 ns |
||||||||||
Micron Technology |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
512X9 |
512 |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
15 ns |
|||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
200 mA |
4096 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
5.5 V |
5.08 mm |
50 MHz |
24.23 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
YES |
.005 Amp |
24.23 mm |
20 ns |
||||||||||
Micron Technology |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.67 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
18.44 mm |
15 ns |
|||||||||||||||
Micron Technology |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
1024 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
3-STATE |
1KX9 |
1K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
35 ns |
|||||||||||||||
Micron Technology |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
8192 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
20 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
AUTOMOTIVE |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
ASYNCHRONOUS |
140 mA |
2048 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
125 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
R-PQCC-J32 |
33.3 MHz |
Not Qualified |
18432 bit |
e0 |
.005 Amp |
15 ns |
|||||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
4KX9 |
4K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
22.2 MHz |
11.43 mm |
Not Qualified |
36864 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
35 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
20 ns |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
200 mA |
512 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
70 Cel |
512X18 |
512 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
5.5 V |
5.08 mm |
50 MHz |
24.23 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
YES |
.005 Amp |
24.23 mm |
20 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
130 mA |
8192 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
28.5 MHz |
11.43 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
35 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
512 words |
5 |
5 |
9 |
CHIP CARRIER |
LDCC32,.5X.6 |
FIFOs |
1.27 mm |
85 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
13.97 mm |
25 ns |
|||||||||||
Micron Technology |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
15 ns |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
4096 words |
5 |
18 |
CHIP CARRIER |
1.27 mm |
70 Cel |
4KX18 |
4K |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
5.5 V |
5.08 mm |
24.23 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
YES |
24.23 mm |
||||||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
45 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
110 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
22.2 MHz |
7.62 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
35 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
45 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
120 mA |
8192 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
8KX9 |
8K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
22.2 MHz |
7.62 mm |
Not Qualified |
73728 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
35 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
4096 words |
5 |
5 |
8 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
70 Cel |
4KX8 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
32768 bit |
e0 |
30 ns |
||||||||||||||||||||||
Micron Technology |
OTHER FIFO |
INDUSTRIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
140 mA |
2048 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
85 Cel |
2KX9 |
2K |
-40 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
40 MHz |
Not Qualified |
18432 bit |
e0 |
.005 Amp |
15 ns |
|||||||||||||||||||
Micron Technology |
COMMERCIAL |
28 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
45 ns |
1 |
CMOS |
J BEND |
PARALLEL |
ASYNCHRONOUS |
2048 words |
5 |
9 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
3-STATE |
2KX9 |
2K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J28 |
5.5 V |
3.66 mm |
7.67 mm |
Not Qualified |
18432 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
18.44 mm |
35 ns |
|||||||||||||||
Micron Technology |
AUTOMOTIVE |
32 |
QCCJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
30 ns |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
512 words |
5 |
9 |
CHIP CARRIER |
1.27 mm |
125 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
QUAD |
R-PQCC-J32 |
5.5 V |
3.81 mm |
11.43 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
13.97 mm |
20 ns |
|||||||||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
25 ns |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
200 mA |
512 words |
5 |
5 |
18 |
CHIP CARRIER |
LDCC68,1.0SQ |
FIFOs |
1.27 mm |
70 Cel |
512X18 |
512 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J68 |
5.5 V |
5.08 mm |
40 MHz |
24.23 mm |
Not Qualified |
9216 bit |
4.5 V |
RETRANSMIT |
e0 |
YES |
.005 Amp |
24.23 mm |
25 ns |
||||||||||
Micron Technology |
OTHER FIFO |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
CERAMIC |
NO |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
1024 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.6 |
FIFOs |
2.54 mm |
70 Cel |
1KX9 |
1K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T28 |
Not Qualified |
9216 bit |
e0 |
50 ns |
||||||||||||||||||||||
Micron Technology |
OTHER FIFO |
AUTOMOTIVE |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
30 ns |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
130 mA |
512 words |
5 |
5 |
9 |
IN-LINE |
DIP28,.3 |
FIFOs |
2.54 mm |
125 Cel |
512X9 |
512 |
-40 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
5.5 V |
4.32 mm |
7.62 mm |
Not Qualified |
4608 bit |
4.5 V |
RETRANSMIT |
e0 |
NO |
.005 Amp |
36.83 mm |
20 ns |
FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.
FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.
FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.
One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.