Renesas Electronics FIFO 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
72V273L10PFGI8	Renesas Electronics		INDUSTRIAL	80	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words	3.3		18	FLATPACK, LOW PROFILE				.65 mm	85 Cel		16KX18	16K	-40 Cel		QUAD	S-PQFP-G80		3.45 V	1.6 mm		14 mm		294912 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 32K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		14 mm	6.5 ns
72V221L15JG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		1024 words	3.3		9	CHIP CARRIER				1.27 mm	70 Cel		1KX9	1K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.556 mm		11.4554 mm		9216 bit	3 V		e3	30	260	YES		13.9954 mm	10 ns
IDT72T7285L5BBGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	130 mA	16384 words	2.5	2.5	72	GRID ARRAY	BGA324,18X18,40		FIFOs	1 mm	85 Cel		16KX72	16K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B324	3	2.625 V	1.97 mm	200 MHz	19 mm	Not Qualified	1179648 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES	.02 Amp	19 mm	3.6 ns
7201LA15DGI	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V		40 MHz		Not Qualified	4608 bit	4.5 V		e3			NO	.005 Amp		15 ns
72V243L10PFG	Renesas Electronics
72V235L10PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	30 mA	2048 words	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		FIFOs	.8 mm	70 Cel		2KX18	2K	0 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	36864 bit	3 V	EASILY EXPANDABLE IN DEPTH AND WIDTH	e3	30	260	YES	.005 Amp	14 mm	6.5 ns
IDT7206L30TPGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	5		9	IN-LINE				2.54 mm	125 Cel		16KX9	16K	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	147456 bit	4.5 V		e3			NO		34.671 mm	30 ns
7203L15DGI	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5	5	9	IN-LINE			FIFOs		85 Cel	3-STATE	2KX9	2K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V		40 MHz		Not Qualified	18432 bit	4.5 V		e3			NO	.012 Amp		15 ns
72V233L6BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	1024 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		1KX18	1K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	18432 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 2K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	4 ns
72V36110L7.5BBG	Renesas Electronics		COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words	3.3		36	GRID ARRAY				1 mm	70 Cel		128KX36	128K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm		13 mm	Not Qualified	4718592 bit	3.15 V		e1			YES		13 mm	5 ns
IDT72V2103L7-5BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		128KX18	128K	0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
72V84L20PAG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	4096 words	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.3,20		FIFOs	.5 mm	70 Cel		4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G56	1	3.6 V	1.2 mm	33.3 MHz	6.1 mm	Not Qualified	36864 bit	3 V	RETRANSMIT	e3	30	260	NO	.005 Amp	14 mm	20 ns
7202LA20JGB	Renesas Electronics	OTHER FIFO	MILITARY	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS	MIL-STD-883 Class B	J BEND	PARALLEL	ASYNCHRONOUS	100 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	125 Cel		1KX9	1K	-55 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	33.3 MHz	11.43 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	13.97 mm	20 ns
IDT7202LA20JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	30 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words	5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	20 ns
7203L12TDGI8	Renesas Electronics	BI-DIRECTIONAL FIFO
IDT72V201L15JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		256 words	3.3		9	CHIP CARRIER				1.27 mm	70 Cel		256X9	256	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		3.6 V	3.55 mm		11.4554 mm	Not Qualified	2304 bit	3 V		e3			YES		13.9954 mm	10 ns
7204L30SOGB8	Renesas Electronics	BI-DIRECTIONAL FIFO		28		RECTANGULAR	PLASTIC/EPOXY	YES	40 ns	1	CMOS	MIL-STD-883 Class B	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	5		9						125 Cel	3-STATE	4KX9	4K	-55 Cel		DUAL	R-PDSO-G28		5.5 V		25 MHz			36864 bit	4.5 V					NO	.025 Amp		30 ns
IDT7200L25Y8	Renesas Electronics		COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		256 words	5		9	SMALL OUTLINE					70 Cel	3-STATE	256X9	256	0 Cel	TIN LEAD	DUAL	R-PDSO-J28		5.5 V				Not Qualified	2304 bit	4.5 V	RETRANSMIT	e0			NO			25 ns
IDT72V3664L15PFG	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		4KX36	4K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	147456 bit	3 V	MAIL BOX BYPASS REGISTER	e3			YES		20 mm	10 ns
IDT72V3670L7-5BBGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	8192 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	85 Cel		8KX36	8K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm	133.3 MHz	13 mm	Not Qualified	294912 bit	3.15 V		e1	40	260	YES	.015 Amp	13 mm	5 ns
IDT72V36100L6BB8	Renesas Electronics	OTHER FIFO	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	70 Cel		64KX36	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm	166 MHz	13 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	13 mm	4 ns
72V805L10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	256 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		256X18	256	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	100 MHz	14 mm	Not Qualified	4608 bit	3 V		e3	30	260	YES	.01 Amp	20 mm	6.5 ns
IDT7201LA25JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		512 words	5		9	CHIP CARRIER				1.27 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	4608 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	25 ns
IDT7202LA20LG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCN	RECTANGULAR	UNSPECIFIED	YES	30 ns	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS	80 mA	1024 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	70 Cel		1KX9	1K	0 Cel	MATTE TIN	QUAD	R-XQCC-N32		5.5 V		33.3 MHz		Not Qualified	9216 bit	4.5 V		e3			NO	.005 Amp		20 ns
72V291L15PFGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	55 mA	131072 words	3.3	3.3	9	FLATPACK, LOW PROFILE	QFP64,.63SQ,32		FIFOs	.8 mm	85 Cel		128KX9	128K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	1179648 bit	3 V		e3			YES	.02 Amp	14 mm	10 ns
IDT72421L12JSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES			CMOS		J BEND		SYNCHRONOUS	50 mA	64 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	70 Cel		64X9	64	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	R-PQCC-J32	1			83.3 MHz		Not Qualified				e0	20	225		.005 Amp		8 ns
IDT7202LA35Y8	Renesas Electronics		COMMERCIAL	28	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	45 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		1024 words	5		9	SMALL OUTLINE					70 Cel	3-STATE	1KX9	1K	0 Cel	TIN LEAD	DUAL	R-PDSO-J28		5.5 V				Not Qualified	9216 bit	4.5 V	RETRANSMIT	e0			NO			35 ns
IDT7207L50JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		32768 words	5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	32KX9	32K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e3			NO		13.97 mm	50 ns
72V251L15JGI8	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	20 mA	8192 words	3.3	3.3	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	85 Cel		8KX9	8K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	3.6 V	3.55 mm	66.7 MHz	11.4554 mm	Not Qualified	73728 bit	3 V		e3	30	260	YES	.005 Amp	13.9954 mm	10 ns
IDT72T7295L5BBG	Renesas Electronics	OTHER FIFO	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	130 mA	32768 words	2.5	2.5	72	GRID ARRAY	BGA324,18X18,40		FIFOs	1 mm	70 Cel		32KX72	32K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B324	3	2.625 V	1.97 mm	200 MHz	19 mm	Not Qualified	2359296 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES	.02 Amp	19 mm	3.6 ns
IDT72225LB10PFG8	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	1024 words	5	5	18	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		FIFOs	.8 mm	70 Cel		1KX18	1K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	100 MHz	14 mm	Not Qualified	18432 bit	4.5 V		e3	30	260	YES	.005 Amp	14 mm	6.5 ns
IDT72V36100L7-5PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		64KX36	64K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm	133.3 MHz	14 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3	30	260	YES	.015 Amp	20 mm	5 ns
7200L30TPGB	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO			CMOS	MIL-STD-883 Class B (Modified)	THROUGH-HOLE		ASYNCHRONOUS	100 mA	256 words	5	5	9	IN-LINE	DIP28,.3		FIFOs	2.54 mm	125 Cel		256X9	256	-55 Cel	MATTE TIN	DUAL	R-PDIP-T28				25 MHz		Not Qualified				e3				.015 Amp		30 ns
IDT7206L25DGI	Renesas Electronics		INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	35 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		16384 words	5		9	IN-LINE				2.54 mm	85 Cel		16KX9	16K	-40 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	147456 bit	4.5 V		e3			NO		37.211 mm	25 ns
7201LA15DG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V		40 MHz		Not Qualified	4608 bit	4.5 V		e3			NO	.005 Amp		15 ns
IDT72241L15L	Renesas Electronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	15 ns	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS		4096 words	5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	4KX9	4K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.048 mm		11.43 mm	Not Qualified	36864 bit	4.5 V		e0			YES		13.97 mm	10 ns
IDT72V36100L15PFG8	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		64KX36	64K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3			YES		20 mm	10 ns
IDT72T7285L4-4BBG	Renesas Electronics	OTHER FIFO	COMMERCIAL	324	BGA	SQUARE	PLASTIC/EPOXY	YES	4.44 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	130 mA	16384 words	2.5	2.5	72	GRID ARRAY	BGA324,18X18,40		FIFOs	1 mm	70 Cel		16KX72	16K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B324	3	2.625 V	1.97 mm	225 MHz	19 mm	Not Qualified	1179648 bit	2.375 V	ASYNCHRONOUS OPERATION ALSO POSSIBLE	e1			YES	.02 Amp	19 mm	3.4 ns
72V293L6BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	65536 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		64KX18	64K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	1179648 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	4 ns
IDT723642L15PFG	Renesas Electronics		COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1024 words	5		36	FLATPACK, LOW PROFILE, FINE PITCH				.4 mm	70 Cel	3-STATE	1KX36	1K	0 Cel	MATTE TIN	QUAD	S-PQFP-G120	3	5.5 V	1.6 mm		14 mm	Not Qualified	36864 bit	4.5 V	MAILBOX	e3	40	260	YES		14 mm	10 ns
IDT7205L50JG	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		8192 words	5		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	8KX9	8K	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.556 mm		11.4554 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e3			NO		13.9954 mm	50 ns
IDT72251L15PFGI8	Renesas Electronics		INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		8192 words	5		9	FLATPACK, LOW PROFILE				.8 mm	85 Cel		8KX9	8K	-40 Cel	MATTE TIN	QUAD	S-PQFP-G32	3	5.5 V	1.6 mm		7 mm	Not Qualified	73728 bit	4.5 V		e3			YES		7 mm	10 ns
IDT72221L15JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	35 mA	1024 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	85 Cel		1KX9	1K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.5 mm	66.7 MHz	11.43 mm	Not Qualified	9216 bit	4.5 V		e3	30	260	YES	.005 Amp	13.97 mm	10 ns
IDT72211L15JGI8	Renesas Electronics		INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		512 words	5		9	CHIP CARRIER				1.27 mm	85 Cel		512X9	512	-40 Cel	MATTE TIN	QUAD	R-PQCC-J32		5.5 V	3.55 mm		11.43 mm	Not Qualified	4608 bit	4.5 V		e3			YES		13.97 mm	10 ns
IDT7201LA30DGB8	Renesas Electronics	OTHER FIFO	MILITARY	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V				Not Qualified	4608 bit	4.5 V		e3			NO	.015 Amp		30 ns
7201LA35DG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	DUAL	R-CDIP-T28		5.5 V		22.2 MHz		Not Qualified	4608 bit	4.5 V		e3			NO	.005 Amp		35 ns
IDT72845LB10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	2	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	100 mA	4096 words	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		4KX18	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	5.5 V	1.6 mm	100 MHz	14 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	YES	.01 Amp	20 mm	6.5 ns
IDT7202LA50TPG	Renesas Electronics		COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	65 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE				2.54 mm	70 Cel	3-STATE	1KX9	1K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28		5.5 V	4.572 mm		7.62 mm	Not Qualified	9216 bit	4.5 V	RETRANSMIT	e3			NO		34.671 mm	50 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.