Renesas Electronics FIFO 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	Cycle Time	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
7203L15PDG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	25 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5		9	IN-LINE					70 Cel	3-STATE	2KX9	2K	0 Cel	MATTE TIN	DUAL	R-PDIP-T28	1	5.5 V		40 MHz			18432 bit	4.5 V		e3	30	260	NO	.012 Amp		15 ns
72V815L15PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	512 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		512X18	512	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	9216 bit	3 V		e3	30	260	YES	.01 Amp	20 mm	10 ns
72V811L15TFGI8	Renesas Electronics		INDUSTRIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		512 words	3.3		9	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		512X9	512	-40 Cel		QUAD	S-PQFP-G64		3.6 V	1.6 mm		10 mm		4608 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	YES		10 mm	10 ns
IDT7205L30DGB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		8192 words	5		9	IN-LINE				2.54 mm	125 Cel		8KX9	8K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Not Qualified	73728 bit	4.5 V		e3			NO		37.211 mm	30 ns
72V831L20TFG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	2048 words	3.3	3.3	9	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		FIFOs	.5 mm	70 Cel		2KX9	2K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	50 MHz	10 mm	Not Qualified	18432 bit	3 V		e3	30	260	YES	.01 Amp	10 mm	12 ns
IDT72V51456L7-5BBGI	Renesas Electronics		INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		65536 words	3.3		36	GRID ARRAY				1 mm	85 Cel		64KX36	64K	-40 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B256	3	3.45 V	3.5 mm		17 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH:9-BIT AND 18-BIT	e1			YES		17 mm	4 ns
IDT72V293L7-5BCGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	65536 words	3.3	3.3	18	GRID ARRAY	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel		64KX18	64K	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	1179648 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	5 ns
IDT72V01L25JG8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		512 words	3.3		9	CHIP CARRIER				1.27 mm	70 Cel	3-STATE	512X9	512	0 Cel	MATTE TIN	QUAD	R-PQCC-J32		3.6 V	3.55 mm		11.43 mm	Not Qualified	4608 bit	3 V	RETRANSMIT	e3			NO		13.97 mm	25 ns
72V2113L7-5BC	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	262144 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		256KX18	256K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	133.3 MHz	11 mm	Not Qualified	4718592 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e0	30	225	YES	.015 Amp	11 mm	5 ns
IDT72V841L15PFGI	Renesas Electronics	BI-DIRECTIONAL FIFO	INDUSTRIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	4096 words	3.3	3.3	9	FLATPACK, LOW PROFILE	QFP64,.63SQ,32		FIFOs	.8 mm	85 Cel		4KX9	4K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	36864 bit	3 V		e3	30	260	YES	.01 Amp	14 mm	10 ns
5962-8866906YX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	30 ns	1	CMOS	MIL-STD-883	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		2048 words	5		9	IN-LINE				2.54 mm	125 Cel		2KX9	2K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	18432 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.1475 mm	20 ns
IDT7207L50L	Renesas Electronics		COMMERCIAL	32	QCCN	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	YES	65 ns	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		32768 words	5		9	CHIP CARRIER				1.27 mm	70 Cel		32KX9	32K	0 Cel	TIN LEAD	QUAD	R-CQCC-N32		5.5 V	3.048 mm		11.43 mm	Not Qualified	294912 bit	4.5 V		e0			NO		13.97 mm	50 ns
72V3660L6BBG8	Renesas Electronics		COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4096 words	3.3		36	GRID ARRAY				1 mm	70 Cel		4KX36	4K	0 Cel		BOTTOM	S-PBGA-B144		3.45 V	1.97 mm		13 mm		147456 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE		NOT SPECIFIED	NOT SPECIFIED	YES		13 mm	4 ns
IDT72V275L20PFG	Renesas Electronics		COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words	3.3		18	FLATPACK, LOW PROFILE				.8 mm	70 Cel		32KX18	32K	0 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm		14 mm	Not Qualified	589824 bit	3 V		e3	40	260	YES		14 mm	12 ns
72V04L35JGI	Renesas Electronics
IDT7202LA80TPB	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	100 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE				2.54 mm	125 Cel		1KX9	1K	-55 Cel	TIN LEAD	DUAL	R-PDIP-T28		5.5 V	4.57 mm		7.62 mm	Not Qualified	9216 bit	4.5 V		e0			NO		34.67 mm	80 ns
IDT7200S120J8	Renesas Electronics		COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	140 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		256 words	5		9	CHIP CARRIER					70 Cel	3-STATE	256X9	256	0 Cel	TIN LEAD	QUAD	R-PQCC-J32		5.5 V				Not Qualified	2304 bit	4.5 V	RETRANSMIT	e0			NO			120 ns
IDT72825LB10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	2	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	100 mA	1024 words	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		1KX18	1K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	5.5 V	1.6 mm	100 MHz	14 mm	Not Qualified	18432 bit	4.5 V		e3	30	260	YES	.01 Amp	20 mm	6.5 ns
IDT7285L15PAG	Renesas Electronics	OTHER FIFO	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	8192 words	5	5	9	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.3,20		FIFOs	.5 mm	70 Cel		8KX9	8K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G56	1	5.5 V	1.2 mm	40 MHz	6.1 mm	Not Qualified	73728 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	14 mm	15 ns
7203L35TDG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	45 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	120 mA	2048 words	5		9	IN-LINE					70 Cel		2KX9	2K	0 Cel		DUAL	R-CDIP-T28		5.5 V					18432 bit	4.5 V	RETRANSMIT				NO			35 ns
7201LA50LGB	Renesas Electronics	BI-DIRECTIONAL FIFO	MILITARY	32	QCCN	RECTANGULAR	PLASTIC/EPOXY	YES	65 ns		CMOS	MIL-STD-883 Class B (Modified)	NO LEAD	PARALLEL	ASYNCHRONOUS	100 mA	512 words	5	5	9	CHIP CARRIER	LCC32,.45X.55		FIFOs	1.27 mm	125 Cel		512X9	512	-55 Cel	MATTE TIN	QUAD	R-PQCC-N32				15 MHz		Not Qualified	4608 bit			e3				.015 Amp		50 ns
5962-8953605YX	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS		THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1024 words	5		9	IN-LINE				2.54 mm	125 Cel		1KX9	1K	-55 Cel		DUAL	R-GDIP-T28		5.5 V	5.08 mm		15.24 mm	Qualified	9216 bit	4.5 V	RETRANSMIT		NOT SPECIFIED	NOT SPECIFIED	NO		37.211 mm	30 ns
7204L12DG8	Renesas Electronics	BI-DIRECTIONAL FIFO
IDT72265LA20TFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	80 mA	16384 words	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		FIFOs	.5 mm	70 Cel		16KX18	16K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	50 MHz	10 mm	Not Qualified	294912 bit	4 V	RETRANSMIT; AUTO POWER DOWN; EASY EXPANDABLE IN DEPTH AND WIDTH	e3	30	260	YES	.02 Amp	10 mm	12 ns
IDT7204L50XE	Renesas Electronics		COMMERCIAL	28	DFP	RECTANGULAR	CERAMIC, GLASS-SEALED	YES	65 ns	1	CMOS		FLAT	PARALLEL	ASYNCHRONOUS		4096 words	5		9	FLATPACK				1.27 mm	70 Cel	3-STATE	4KX9	4K	0 Cel	TIN LEAD	DUAL	R-GDFP-F28		5.5 V	2.921 mm		12.446 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e0			NO		18.288 mm	50 ns
IDT72V3690L39268PFGI	Renesas Electronics		INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	85 Cel		32KX36	32K	-40 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3.15 V		e3			YES		20 mm	5 ns
7201LA25DI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	28	DIP	RECTANGULAR	CERAMIC	NO			CMOS		THROUGH-HOLE		ASYNCHRONOUS	80 mA	512 words	5	5	9	IN-LINE	DIP28,.6		FIFOs	2.54 mm	85 Cel		512X9	512	-40 Cel	TIN LEAD	DUAL	R-XDIP-T28				28.5 MHz		Not Qualified				e0				.005 Amp		25 ns
72V3664L15PFG	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		4096 words	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		4KX36	4K	0 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	147456 bit	3 V	MAIL BOX BYPASS REGISTER	e3	30	260	YES	.005 Amp	20 mm	10 ns
72V3680L7-5BB	Renesas Electronics	OTHER FIFO	COMMERCIAL	144	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	40 mA	16384 words	3.3	3.3	36	GRID ARRAY	BGA144,12X12,40		FIFOs	1 mm	70 Cel		16KX36	16K	0 Cel	TIN LEAD	BOTTOM	S-PBGA-B144	3	3.45 V	1.97 mm	83 MHz	13 mm	Not Qualified	589824 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e0	30	225	YES	.015 Amp	13 mm	5 ns
IDT72421L12PFSCDS-W	Renesas Electronics	OTHER FIFO	COMMERCIAL	32	QFP	SQUARE	PLASTIC/EPOXY	YES			CMOS		GULL WING		SYNCHRONOUS	50 mA	64 words	5	5	9	FLATPACK	QFP32,.35SQ,32		FIFOs	.8 mm	70 Cel		64X9	64	0 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G32	3			83.3 MHz		Not Qualified				e0	20	225		.005 Amp		8 ns
72V81L15PAG8	Renesas Electronics	BI-DIRECTIONAL FIFO	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	100 mA	512 words	3.3	3.3	9	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.3,20		FIFOs	.5 mm	70 Cel		512X9	512	0 Cel	MATTE TIN	DUAL	R-PDSO-G56	1	3.6 V	1.2 mm	40 MHz	6.1 mm	Not Qualified	4608 bit	3 V	RETRANSMIT	e3	30	260	NO	.005 Amp	14 mm	15 ns
72V36100L7-5PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	128	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	40 mA	65536 words	3.3	3.3	36	FLATPACK	QFP128,.63X.87,20		FIFOs	.5 mm	70 Cel		64KX36	64K	0 Cel	MATTE TIN	QUAD	R-PQFP-G128	3	3.45 V		133.3 MHz		Not Qualified	2359296 bit	3.15 V	RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3	30	260	YES	.015 Amp		5 ns
IDT72251L25PFGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	50 mA	8192 words	5	5	9	FLATPACK, LOW PROFILE	QFP32,.35SQ,32		FIFOs	.8 mm	85 Cel		8KX9	8K	-40 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G32	3	5.5 V	1.6 mm	40 MHz	7 mm	Not Qualified	73728 bit	4.5 V		e3	30	260	YES	.005 Amp	7 mm	15 ns
72V275L20TFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	20 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	32768 words	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP64,.47SQ,20		FIFOs	.5 mm	70 Cel		32KX18	32K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	3.6 V	1.6 mm	50 MHz	10 mm	Not Qualified	589824 bit	3 V		e3	30	260	YES	.02 Amp	10 mm	12 ns
IDT72V3623L10PFG	Renesas Electronics		COMMERCIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		256 words	3.3		36	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		256X36	256	0 Cel	Matte Tin (Sn)	QUAD	R-PQFP-G128	3	3.6 V	1.6 mm		14 mm	Not Qualified	9216 bit	3 V	EASILY EXPANDABLE IN DEPTH AND WIDTH	e3	30	260	YES		20 mm	6.5 ns
IDT7284L15PAG	Renesas Electronics	OTHER FIFO	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	4096 words	5	5	9	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.3,20		FIFOs	.5 mm	70 Cel		4KX9	4K	0 Cel	Matte Tin (Sn) - annealed	DUAL	R-PDSO-G56	1	5.5 V	1.2 mm	40 MHz	6.1 mm	Not Qualified	36864 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.015 Amp	14 mm	15 ns
IDT72815LB15PFGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	128	LFQFP	RECTANGULAR	PLASTIC/EPOXY	YES	15 ns	2	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	100 mA	512 words	5	5	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP128,.63X.87,20		FIFOs	.5 mm	85 Cel		512X18	512	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQFP-G128	3	5.5 V	1.6 mm	66.7 MHz	14 mm	Not Qualified	9216 bit	4.5 V		e3	30	260	YES	.01 Amp	20 mm	10 ns
72V2103L6BCG	Renesas Electronics	OTHER FIFO	COMMERCIAL	100	LBGA	SQUARE	PLASTIC/EPOXY	YES	6 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY, LOW PROFILE	BGA100,10X10,40	9	FIFOs	1 mm	70 Cel		128KX18	128K	0 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B100	3	3.45 V	1.5 mm	166 MHz	11 mm	Not Qualified	2359296 bit	3.15 V	ALTERNATIVE MEMORY WIDTH 9; ASYNCHRONOUS MODE ALSO POSSIBLE	e1	30	260	YES	.015 Amp	11 mm	4 ns
IDT723632L15PFG8	Renesas Electronics		COMMERCIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		512 words	5		36	FLATPACK, LOW PROFILE, FINE PITCH				.4 mm	70 Cel	3-STATE	512X36	512	0 Cel	MATTE TIN	QUAD	S-PQFP-G120	3	5.5 V	1.6 mm		14 mm	Not Qualified	18432 bit	4.5 V	MAILBOX	e3	40	260	YES		14 mm	10 ns
IDT7207L30DBG	Renesas Electronics		MILITARY	28	DIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	40 ns	1	CMOS	MIL-STD-883 Class B	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		32768 words	5		9	IN-LINE				2.54 mm	125 Cel	3-STATE	32KX9	32K	-55 Cel	MATTE TIN	DUAL	R-GDIP-T28		5.5 V	5.08 mm		7.62 mm	Not Qualified	294912 bit	4.5 V	RETRANSMIT	e3			NO		37.1475 mm	30 ns
IDT72V2103L7-5BCI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	100	BGA	SQUARE	PLASTIC/EPOXY	YES	7.5 ns	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS	35 mA	131072 words	3.3	3.3	18	GRID ARRAY	BGA100,10X10,40	9	FIFOs	1 mm	85 Cel		128KX18	128K	-40 Cel	Tin/Lead (Sn63Pb37)	BOTTOM	S-PBGA-B100	3	3.45 V		133.3 MHz		Not Qualified	2359296 bit	3.15 V		e0	30	225	YES	.015 Amp		5 ns
IDT72V211L15PFG	Renesas Electronics		COMMERCIAL	32	LQFP	SQUARE	PLASTIC/EPOXY	YES	15 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		512 words	3.3		9	FLATPACK, LOW PROFILE				.8 mm	70 Cel		512X9	512	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G32	3	3.6 V	1.6 mm		7 mm	Not Qualified	4608 bit	3 V		e3	30	260	YES		7 mm	10 ns
7200L25JGI	Renesas Electronics	OTHER FIFO	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	35 ns	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	80 mA	256 words	5	5	9	CHIP CARRIER	LDCC32,.5X.6		FIFOs	1.27 mm	85 Cel		256X9	256	-40 Cel	Matte Tin (Sn) - annealed	QUAD	R-PQCC-J32	3	5.5 V	3.55 mm	28.5 MHz	11.43 mm	Not Qualified	2304 bit	4.5 V	RETRANSMIT	e3	30	260	NO	.005 Amp	13.97 mm	25 ns
72V05L35JGI	Renesas Electronics
IDT72261L25TFB	Renesas Electronics		MILITARY	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		16384 words	5		9	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	125 Cel	3-STATE	16KX9	16K	-55 Cel	TIN LEAD	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	147456 bit	4.5 V	RETRANSMIT	e0			YES		10 mm
72V293L10PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	80	LQFP	SQUARE	PLASTIC/EPOXY	YES	10 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	35 mA	65536 words	3.3	3.3	18	FLATPACK, LOW PROFILE	QFP80,.64SQ	9	FIFOs	.65 mm	70 Cel		64KX18	64K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G80	3	3.45 V	1.6 mm	100 MHz	14 mm	Not Qualified	1179648 bit	3.15 V	IT CAN ALSO BE CONFIGURED AS 128K X 9; RETRANSMIT; ASYNCHRONOUS MODE IS ALSO POSSIBLE	e3	30	260	YES	.015 Amp	14 mm	6.5 ns
IDT72225LB25TFG8	Renesas Electronics		COMMERCIAL	64	LFQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		1024 words	5		18	FLATPACK, LOW PROFILE, FINE PITCH				.5 mm	70 Cel		1KX18	1K	0 Cel	MATTE TIN	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm		10 mm	Not Qualified	18432 bit	4.5 V		e3			YES		10 mm	15 ns
IDT72235LB25PFG	Renesas Electronics	OTHER FIFO	COMMERCIAL	64	LQFP	SQUARE	PLASTIC/EPOXY	YES	25 ns	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	60 mA	2048 words	5	5	18	FLATPACK, LOW PROFILE	QFP64,.66SQ,32		FIFOs	.8 mm	70 Cel	3-STATE	2KX18	2K	0 Cel	Matte Tin (Sn) - annealed	QUAD	S-PQFP-G64	3	5.5 V	1.6 mm	40 MHz	14 mm	Not Qualified	36864 bit	4.5 V		e3	30	260	YES	.005 Amp	14 mm	15 ns

FIFO

FIFO, or First-In, First-Out, is a type of digital circuit that is used in computer systems and digital devices to manage the flow of data. A FIFO circuit stores data in a buffer and retrieves the data in the same order in which it was received, with the first data received being the first data to be retrieved.

FIFO circuits are used in many applications where data needs to be stored and retrieved in a specific order, such as in data communication systems, disk drives, and multimedia devices. For example, in a data communication system, a FIFO circuit can be used to store incoming data packets in a buffer and retrieve them in the order in which they were received, ensuring that the data is processed correctly and in a timely manner.

FIFO circuits are typically implemented using a combination of flip-flops, multiplexers, and control logic. The control logic manages the input and output of data to the FIFO buffer and ensures that the data is stored and retrieved in the correct order.

One of the advantages of using a FIFO circuit is that it provides a simple and efficient way to manage the flow of data. FIFO circuits are easy to implement and can handle large amounts of data. They can also be used in conjunction with other types of digital circuits to implement more complex data processing algorithms.