Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Package Shape | Package Body Material | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Alternate Memory Width | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | Ready or Busy | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Maximum Write Cycle Time (tWC) | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
NO |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
52 MHz |
11.5 mm |
68719476736 bit |
2.7 V |
e1 |
30 |
260 |
MLC NAND TYPE |
13 mm |
NO |
|||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
TIN SILVER COPPER NICKEL GERMANIUM |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
8GX8 |
8G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
4GX8 |
4G |
-40 Cel |
NO |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
52 MHz |
11.5 mm |
34359738368 bit |
2.7 V |
30 |
260 |
MLC NAND TYPE |
13 mm |
NO |
||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
NO |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
52 MHz |
11.5 mm |
68719476736 bit |
2.7 V |
e1 |
30 |
260 |
MLC NAND TYPE |
13 mm |
NO |
|||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
4GX8 |
4G |
-40 Cel |
NO |
Tin/Silver/Copper (Sn/Ag/Cu) |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
52 MHz |
11.5 mm |
34359738368 bit |
2.7 V |
e1 |
30 |
260 |
MLC NAND TYPE |
13 mm |
NO |
|||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
3-STATE |
16GX8 |
16G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.1 mm |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
8GX8 |
8G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
11 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13.5 mm |
|||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
INDUSTRIAL |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
8589934592 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
85 Cel |
8GX8 |
8G |
-40 Cel |
BOTTOM |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
11.5 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
8589934592 words |
8 |
UNCASED CHIP |
85 Cel |
8GX8 |
8G |
-25 Cel |
UPPER |
X-XUUC-N |
68719476736 bit |
MLC NAND TYPE |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
16GX8 |
16G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
3.3 |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
OPEN-DRAIN |
4GX8 |
4G |
-25 Cel |
NO |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
34359738368 bit |
2.7 V |
ALSO AVAILABE WITH TAPE AND REEL |
30 |
260 |
MLC NAND TYPE |
13 mm |
NO |
||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
OTHER |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
8589934592 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
85 Cel |
8GX8 |
8G |
-25 Cel |
BOTTOM |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
11.5 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
16GX8 |
16G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
Kingston Technology Company |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
3.3 |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
16GX8 |
16G |
-25 Cel |
YES |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
TLC NAND TYPE |
13 mm |
3.3 |
NO |
||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
SERIAL |
SYNCHRONOUS |
8589934592 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
15 |
.5 mm |
105 Cel |
8GX8 |
8G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
11.5 mm |
68719476736 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
||||||||||||||||||||||||||||||||||
Toshiba |
FLASH CARD |
OTHER |
153 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4294967296 words |
8 |
GRID ARRAY |
BGA153,14X14,20 |
.5 mm |
85 Cel |
4GX8 |
4G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
11 mm |
34359738368 bit |
2.7 V |
13 mm |
|||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
3-STATE |
16GX8 |
16G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.2 mm |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
|||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
OTHER |
DIE |
RECTANGULAR |
YES |
1 |
CMOS |
NO LEAD |
8589934592 words |
8 |
UNCASED CHIP |
85 Cel |
8GX8 |
8G |
-25 Cel |
UPPER |
R-XUUC-N |
68719476736 bit |
NAND TYPE |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
32GX8 |
32G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
274877906944 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
95 Cel |
32GX8 |
32G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.9 mm |
11.5 mm |
274877906944 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
|||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
OTHER |
YES |
1 |
CMOS |
ASYNCHRONOUS |
8589934592 words |
1.8 |
8 |
GRID ARRAY |
85 Cel |
8GX8 |
8G |
-25 Cel |
.8 mm |
11.5 mm |
68719476736 bit |
3.3V SUPPLY IS ALSO AVAILABLE |
13 mm |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
.5 mm |
105 Cel |
8GX8 |
8G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.2 mm |
11.5 mm |
68719476736 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
|||||||||||||||||||||||||||||||||
Kioxia Holdings |
FLASH CARD |
INDUSTRIAL |
153 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
8589934592 words |
8 |
GRID ARRAY |
BGA153,14X14,20 |
.5 mm |
105 Cel |
8GX8 |
8G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
11 mm |
68719476736 bit |
2.7 V |
13 mm |
||||||||||||||||||||||||||||||||||||||||||
Kioxia Holdings |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
30 mA |
4294967296 words |
3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
4MX8 |
4M |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
200 MHz |
11 mm |
34359738368 bit |
2.7 V |
NAND TYPE |
13 mm |
3 |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
OPEN-DRAIN |
8GX8 |
8G |
-25 Cel |
NO |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
11.5 mm |
68719476736 bit |
2.7 V |
ALSO AVAILABE WITH TAPE AND REEL |
NOT SPECIFIED |
NOT SPECIFIED |
MLC NAND TYPE |
13 mm |
NO |
|||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
68719476736 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
3-STATE |
64GX8 |
64G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.1 mm |
200 MHz |
11.5 mm |
549755813888 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
||||||||||||||||||||||||||||||
Kioxia Holdings |
FLASH CARD |
OTHER |
153 |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
8589934592 words |
8 |
GRID ARRAY |
BGA153,14X14,20 |
.5 mm |
85 Cel |
8GX8 |
8G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
11 mm |
68719476736 bit |
2.7 V |
13 mm |
||||||||||||||||||||||||||||||||||||||||||
Samsung |
FLASH CARD |
OTHER |
YES |
1 |
CMOS |
17179869184 words |
1.8 |
8 |
85 Cel |
16GX8 |
16G |
-25 Cel |
.8 mm |
11.5 mm |
137438953472 bit |
3.3V SUPPLY IS ALSO AVAILABLE |
13 mm |
1.8 |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Kingston Technology Company |
FLASH CARD |
OTHER |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
34359738368 words |
3.3 |
8 |
UNCASED CHIP |
85 Cel |
32GX8 |
32G |
-25 Cel |
UPPER |
R-XUUC-N |
2.1 mm |
24 mm |
274877906944 bit |
NOR TYPE |
32 mm |
3.3 |
||||||||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
105 Cel |
16GX8 |
16G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1.2 mm |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
|||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
34359738368 words |
8 |
UNCASED CHIP |
32GX8 |
32G |
UNSPECIFIED |
R-XUUC-N |
274877906944 bit |
NOR TYPE |
|||||||||||||||||||||||||||||||||||||||||||||||||||
|
Kingston Technology Company |
FLASH CARD |
OTHER |
DIE |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
34359738368 words |
3.3 |
8 |
UNCASED CHIP |
85 Cel |
32GX8 |
32G |
-25 Cel |
UPPER |
R-XUUC-N |
1 mm |
11 mm |
274877906944 bit |
NOR TYPE |
15 mm |
3.3 |
||||||||||||||||||||||||||||||||||||||||||
Kingston Technology Company |
FLASH CARD |
BGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4294967296 words |
8 |
GRID ARRAY |
4GX8 |
4G |
BOTTOM |
R-PBGA-B |
34359738368 bit |
MLC NAND TYPE |
||||||||||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
DIE |
UNSPECIFIED |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
68719476736 words |
8 |
UNCASED CHIP |
85 Cel |
64GX8 |
64G |
-25 Cel |
UPPER |
X-XUUC-N |
549755813888 bit |
MLC NAND TYPE |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Kingston Technology Company |
FLASH CARD |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SYNCHRONOUS |
4294967296 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
OPEN-DRAIN |
4GX8 |
4G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
200 MHz |
11.5 mm |
34359738368 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
||||||||||||||||||||||||||||||||||
|
Alliance Memory |
FLASH CARD |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH CARD |
100 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
NO |
8 |
GRID ARRAY, LOW PROFILE |
BGA100,11X17,40 |
1 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
YES |
BOTTOM |
R-PBGA-B100 |
3.6 V |
1.4 mm |
200 MHz |
14 mm |
68719476736 bit |
2.7 V |
NAND TYPE |
18 mm |
3.3 |
NO |
||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
100 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
8 |
GRID ARRAY, THIN PROFILE |
1 mm |
85 Cel |
32GX8 |
32G |
-40 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B100 |
3.6 V |
1.2 mm |
14 mm |
274877906944 bit |
2.7 V |
e1 |
30 |
260 |
18 mm |
2.7 |
||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
32GX8 |
32G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.9 mm |
11.5 mm |
274877906944 bit |
2.7 V |
NAND TYPE |
13 mm |
|||||||||||||||||||||||||||||||||||||
|
Integrated Silicon Solution |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
8589934592 words |
3.3 |
NO |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
8GX8 |
8G |
-40 Cel |
YES |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B153 |
3 |
3.6 V |
1 mm |
200 MHz |
11.5 mm |
68719476736 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
3.3 |
NO |
|||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
OTHER |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
SERIAL |
SYNCHRONOUS |
17179869184 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
85 Cel |
16GX8 |
16G |
-25 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
.8 mm |
3000 Write/Erase Cycles |
11 mm |
137438953472 bit |
2.7 V |
MLC NAND TYPE |
13.5 mm |
|||||||||||||||||||||||||||||||||||
|
Kingston Technology Company |
FLASH CARD |
153 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
4294967296 words |
3.3 |
NO |
8 |
85 Cel |
4GX8 |
4G |
-25 Cel |
YES |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
200 MHz |
11.5 mm |
34359738368 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
NO |
||||||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
AEC-Q100 |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
1.8 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
105 Cel |
32GX8 |
32G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
1.95 V |
.9 mm |
200 MHz |
11.5 mm |
274877906944 bit |
1.7 V |
30 |
260 |
NAND TYPE |
13 mm |
1.8 |
|||||||||||||||||||||||||||||||
Kingston Technology Company |
FLASH CARD |
RECTANGULAR |
UNSPECIFIED |
YES |
1 |
CMOS |
NO LEAD |
8589934592 words |
3.3 |
8 |
UNCASED CHIP |
85 Cel |
8GX8 |
8G |
-40 Cel |
UPPER |
R-XUUC-N |
30000 Write/Erase Cycles |
68719476736 bit |
SLC NAND TYPE |
3.3 |
|||||||||||||||||||||||||||||||||||||||||||||||
|
Western Digital |
FLASH CARD |
153 |
VFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
1 |
.5 mm |
85 Cel |
32GX8 |
32G |
-40 Cel |
BOTTOM |
R-PBGA-B153 |
3.6 V |
1 mm |
3000 Write/Erase Cycles |
200 MHz |
11.5 mm |
274877906944 bit |
2.7 V |
MLC NAND TYPE |
13 mm |
3.3 |
|||||||||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
153 |
TFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
17179869184 words |
NO |
8 |
GRID ARRAY, THIN PROFILE, FINE PITCH |
BGA153,14X14,20 |
.5 mm |
105 Cel |
16GX8 |
16G |
-40 Cel |
NO |
TIN SILVER COPPER |
YES |
BOTTOM |
HARDWARE |
R-PBGA-B153 |
3.6 V |
1.2 mm |
200 MHz |
11.5 mm |
137438953472 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
13 mm |
2.7 |
NO |
||||||||||||||||||||||||||
|
Micron Technology |
FLASH CARD |
INDUSTRIAL |
100 |
TBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
PARALLEL |
SYNCHRONOUS |
34359738368 words |
NO |
8 |
GRID ARRAY, THIN PROFILE |
BGA100,10X15,40 |
1 mm |
85 Cel |
32GX8 |
32G |
-40 Cel |
NO |
TIN SILVER COPPER |
YES |
BOTTOM |
HARDWARE |
R-PBGA-B100 |
3.6 V |
1.2 mm |
200 MHz |
14 mm |
274877906944 bit |
2.7 V |
e1 |
30 |
260 |
NAND TYPE |
18 mm |
2.7 |
NO |
Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.
Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.
There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.
Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.