100 Flash Memory 469

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
S40410081B1B2I000	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V						MLC NAND TYPE		18 mm		3
S40410081B1B2I003	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V								18 mm		3
S40410081B1B2W000	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V						MLC NAND TYPE		18 mm		3
S40410081B1B2W003	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		8GX8	8G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		68719476736 bit	2.7 V								18 mm		3
S40410161B1B2I010	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3
S40410161B1B2I013	Cypress Semiconductor	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V								18 mm		3
S40410161B1B2W010	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V						MLC NAND TYPE		18 mm		3
S40410161B1B2W013	Cypress Semiconductor	FLASH	OTHER	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3			8	GRID ARRAY, LOW PROFILE		4			1 mm	85 Cel		16GX8	16G	-25 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18 mm		3
EPC16QI100N	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	16MX1	16M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	16777216 bit	3 V			e3				.00015 Amp	20 mm
MT29F128G08AUCBBH3-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		137438953472 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm		2.7
MT29F512G08CUCABH3-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm		2.7
MT29F64G08AECABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B100							Not Qualified	68719476736 bit			8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F8G08ABCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		1GX8	1G	-40 Cel	2K	YES		YES	BOTTOM	R-PBGA-B100							Not Qualified	8589934592 bit			4K				SLC NAND TYPE	.00005 Amp		20 ns		NO
MTFC8GAMALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		68719476736 bit	2.7 V						NAND TYPE		18 mm
EPC16QC100N	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	16777216 bit	3 V			e3				.00015 Amp	20 mm
MT29F16G08ABCCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B100							Not Qualified	17179869184 bit			4K				SLC NAND TYPE	.00005 Amp		20 ns		NO
MT29F16G08ABCCBH1-10IT:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm	Not Qualified	17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm	20 ns	2.7	NO
MTFC64GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		549755813888 bit	2.7 V						NAND TYPE		18 mm
MT29F64G08AECABH1-10Z:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM	R-PBGA-B100							Not Qualified	68719476736 bit			8K				SLC NAND TYPE	.00001 Amp		20 ns		NO
MT29F64G08AKCBBH2-12:B	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		8GX8	8G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm			12 mm		68719476736 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm		2.7
MTFC32GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	105 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		274877906944 bit	2.7 V						NAND TYPE		18 mm
MTFC32GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		32GX8	32G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		274877906944 bit	2.7 V						NAND TYPE		18 mm
EPC8QI100N	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	8388608 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			MATTE TIN		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	8388608 bit	3 V			e3				.00015 Amp	20 mm
MT29F16G08ABCBBH1-12AIT:B	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS/SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	YES		8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			10	1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM	R-PBGA-B100		3.6 V	1 mm	100000 Write/Erase Cycles		12 mm		17179869184 bit	2.7 V	83MHZ CLOCK FREQUENCY IS AVAILABLE	4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.00005 Amp	18 mm		3.3	NO
MT29F32G08AECBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		4GX8	4G	0 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm		34359738368 bit	2.7 V			e1	30	260	SLC NAND TYPE		18 mm		2.7
MTFC16GAPALHT-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	105 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm		137438953472 bit	2.7 V						NAND TYPE		18 mm
EPC8QI100	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	8388608 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	8MX1	8M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	8388608 bit	3 V			e0				.00015 Amp	20 mm
EPC16QC100	Intel	EEPROM	COMMERCIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	16777216 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	70 Cel	3-STATE	16MX1	16M	0 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	2.15 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	16777216 bit	3 V			e0				.00015 Amp	20 mm
EPC4QI100	Intel	EEPROM	INDUSTRIAL	100	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		90 mA	4194304 words	3.3		3.3	1	FLATPACK	QFP100,.7X.9		Flash Memories		.65 mm	85 Cel	3-STATE	4MX1	4M	-40 Cel			TIN LEAD		QUAD	R-PQFP-G100	3	3.6 V	3.4 mm	100000 Write/Erase Cycles	66.7 MHz	14 mm	Not Qualified	4194304 bit	3 V			e0				.00015 Amp	20 mm
MTFC16GLWDQ-4MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm		137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC4GLGDQ-AITATR	Micron Technology	FLASH		100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words		NO		8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		4GX8	4G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm		52 MHz	14 mm		34359738368 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			NO
MTFC8GACAALT-4MIT	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm		68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm		3.3	NO
MTFC8GACAALT-4MITTR	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm		52 MHz	14 mm		68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm		3.3	NO
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.703 mm		52 MHz	14 mm		68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MT29F256G08CKCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CMAAAH3ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CMAAAH3IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH1-12ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBAABH3-10:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F256G08CJAAAH2ITZ:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MTFC4GMWDQ-3MAIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			4294967296 words				8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		4GX8	4G	-40 Cel					BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			14 mm		34359738368 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18 mm		2.7
MT29F256G08CJAAAH1Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F32G08CBCBBH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	4294967296 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	BOTTOM	R-PBGA-B100							Not Qualified	34359738368 bit			4K				MLC NAND TYPE	.00005 Amp		20 ns		NO
MT29F256G08CJAABH2-10IT:A	Micron Technology	FLASH	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F16G08ABABAH1-12:B	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2147483648 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		2GX8	2G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1 mm			12 mm		17179869184 bit	2.7 V			e1			SLC NAND TYPE		18 mm		2.7
MT29F256G08CJAAAH3:A	Micron Technology	FLASH	COMMERCIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.4 mm			12 mm		274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7
MT29F64G08CBCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		8GX8	8G	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B100		3.6 V	1.2 mm			12 mm		68719476736 bit	2.7 V			e1			MLC NAND TYPE		18 mm		2.7

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.